• Title/Summary/Keyword: Device modeling

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'Warm-up' of a ${\pi}-cell$ Liquid Crystal Device

  • Lee, Gi-Dong;Bos, Philip J.;Ahn, Seon-Hong;Lee, Kun-Jong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1096-1100
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    • 2003
  • A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

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Physics-based OLED Analog Behavior Modeling

  • Lee, Sang-Gun;Hattori, Reiji
    • Journal of Information Display
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    • v.10 no.3
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    • pp.101-106
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    • 2009
  • In this study, a physical OLED analog behavior model for SPICE simulation was described using the Verilog-A language. The model was presented through theoretical equations for the J-V characteristics of OLED derived according to the internalcarrier emission equation based on a diffusion model at the Schottky barrier contact, and the mobility equation based on the Pool-Frenkel model. The accuracy of this model was examined by comparing it with the results of the device simulation that was conducted.

Hot Electron Induced Input offset Voltage Modeling in CMOS Differential Amplifiers (Hot electron에 의한 CMOS 차동증폭기의 압력 offset 전압 모델링)

  • Jong Tae Park
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.7
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    • pp.82-88
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    • 1992
  • This paper presents one of the first comprehensive studies of how hot electron degradation impacts the input offset voltage of a CMOS differential amplifiers. This study utilizes the concept of a virtual source-coupled MOSFET pair in order to evaluate offset voltaged egradation directly from individual device measurement. Next, analytical models are developed to describe the offset voltage degradation. These models are used to examine how hot electron induced offset voltage is affected with the device parameters.

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An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

  • Ghosh, Pujarini;Haldar, Subhasis;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.4
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    • pp.377-387
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    • 2012
  • An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

Design and fabrication of a 2D haptic interface apparatus and the realization of a virtual air-hockey system using the device (2D 햅틱 인터페이스 장치 설계 및 이를 이용한 가상 에어하키 시스템 구현)

  • Back, Jong-Won;Kang, Ji-Min;Yong, Ho-Joong;Choi, Dae-Sung;Jang, Tae-Jeong
    • Proceedings of the KIEE Conference
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    • 2005.10b
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    • pp.78-80
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    • 2005
  • Haptic interface apparatus is the device which can offer users virtual reality not only by visualization of virtual space but also by force or tactile feedback. In this paper, we designed and fabricated a 2D haptic interface device that can be used for various purposes, and implemented a virtual air-hockey system that users can easily find in game rooms. By suitable modeling and haptic rendering, users can feel the impact and the reaction force with his/her hand holding the handle through 2D haptic interface device when he/she hit an air-hockey puck with the handle. Through the trial demonstration. we observed the reasonable effect of direction and speed of a ball like doing in reality.

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The Insulation Design of Enclosure for Diagnostic Device in Extra High Voltage Line (초고압 선로 진단장치용 외함 절연설계)

  • Kim, Ki-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.3
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    • pp.201-207
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    • 2015
  • In this paper, in order to avoid equipment malfunction due to electromagnetic waves, which can occur when high-voltage live line diagnostic device fabrication, the enclosure structure of the diagnostic device with power lines that can minimize the EMI (electromagnetic interference) was modeled using the FEM (finite element method). Simulation examined the strength of the electric field in the required thickness, material and regions where there is a control board while changing the curvature radius of the corner making the enclosure, and By applying a mechanical design and simulation results that occur during the actual production has been designed for the final design. Most of the simulation results for the electric field is concentrated in the final model, the inner edge of the enclosure could be confirmed that the stable structure.

Development of Automatic Wax-Ring Manufacturing System for Silk Coating (섬유코팅용 왁스링 성형을 위한 자동화 시스템 개발)

  • Cho, Young Hak;Maeng, Heeyoung
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.3_1spc
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    • pp.531-536
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    • 2013
  • An automatic wax-ring manufacturing system for silk coating was developed, which consisted of a container, pallet with a cooling part, injection port, and removing device. The removing device is a system to load, lift, and cut the wax-ring, which is widelyused for various silk-coating industrial purposes. A novel removing device equipped with a water cooling circulation system is proposed in this paper. It has the benefit of easy control, as well as the convenience of loading and unloading without the use of other equipment. Three-dimensional modeling techniques were adopted to develop integrated functions for the automatic wax-ring manufacturing system, which made it possible to confirm the smooth integration/interface of each part and the system's interrelations with other manufacturing systems.

Dependence of Turn-On Voltage and Surface State Density on the Silicon Crystallographic Orientation (실리콘 결정의 방향성에 따른 Turn-On 전사과 추면대융단파의 상대성에 관한 연구)

  • 성영권;성만영;조철제;고기만;이병득
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.33 no.4
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    • pp.157-163
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    • 1984
  • The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

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Modeling and testing for hydraulic shock regarding a valve-less electro-hydraulic servo steering device for ships

  • Jian, Liao;Lin, He;Rongwu, Xu
    • International Journal of Fluid Machinery and Systems
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    • v.8 no.4
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    • pp.318-326
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    • 2015
  • A valve-less electro-hydraulic servo steering device (short: VSSD) for ships was chosen as a study object, and its mathematic model of hydraulic shock was established on the basis of flow properties and force balance of each component. The influence of system structure parameters, changing rate of motor speed and external load on hydraulic shock strength was simulated by the method of numerical simulation. Experiment was designed to test the hydraulic shock mathematic model of VSSD. Experiment results verified the correctness of the model, and the model provided a correct theoretical method for the calculation and control of hydraulic shock of valve-less electro-hydraulic servo steering device.

Force Feedback Control of 3 DOF Haptic Device Utilizing Electrorheological Fluid (ER 유체를 이용한 3 자유도 햅틱 장치의 힘 반향 제어)

  • Han, Y.M.;Kang, P.S.;Choi, S.B.
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2005.11a
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    • pp.213-216
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    • 2005
  • This paper presents force feedback control performance of a 3DOF haptic device that can be used for minimally invasive surgery (MIS). As a first step, a 3DOF electrorheological (ER) joint is designed using a spherical mechanism. And it is optimized based on the mathematical torque modeling. Subsequently, the master haptic device is manufactured by the spherical joint. In order to achieve desired force trajectories, model based compensation strategy is adopted for the ER master. Therefore, Preisach model fur the PMA-based ER fluid is identified using experimental first order descending (FOD) curves. A compensation strategy is then formulated through the model inversion to achieve desired force at the ER master. Tracking control performances for sinusoidal force trajectory are presented, and their tracking errors are evaluated.

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