• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.5
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• pp.370-374
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• 1991

A high performance fully ion-implanted InP JFET was characterized for high speed switching elements. The switch has an insertion loss of 5.5dB with 31.6dB isolation at 1GHz. This device can effectively swithc a byte-multiplexed 2Gb/s signal and an eye-diagram taken at 2Gb/s shows an error-free eye pattern. Therefore, this device can be used as a switching element for high transmission data rate for monolithic integration of optoelectronic circuit in the long-wavelength region.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.4
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 전기의세계
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• v.25 no.1
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• Journal of Intelligence and Information Systems
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• v.29 no.1
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• pp.289-305
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• 2023

The rapid increase in the use of mobile devices is changing consumers' online shopping behavior. However, the difference in the effect on the conversion rate according to the time when consumers switch from a small screen to a large screen has not been sufficiently studied. In addition, the differences in the effect of device conversion on purchase performance according to the characteristics of each country's infrastructure have not been sufficiently studied. Against this background, this study aims to analyze whether the timing of switching from mobile devices to PC devices and the country's mobile Internet penetration rate are moderating the positive effect of device switching on purchase performance. For empirical analysis, Google Merchandise Store data was collected and 101,466 data from 130 countries were analyzed with a multilevel model. As a result of the analysis, consumers' device switching (i.e., mobile to PC) had a positive effect when it occurred in the middle of the consumer journey. However, it was analyzed that when device switching occurred at the later stage of the consumer journey, it had a negative effect on purchase performance. In addition, it was analyzed that the higher the mobile Internet penetration rate, the weaker the positive effect of consumer device conversion on purchase performance.

• Journal of the Korean Physical Society
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• v.80
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• pp.1076-1080
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• 2022

For preventing a sneak current in the 3D cross-point array, the selection device is essentially necessary and an n-MOSFET has been used for the selection device. However, the three-terminal electrodes of n-MOSFET make to achieve a high density of a cross-point array difficult. As a solution, using a selector having two terminal electrodes has been intensively researched. We presented that the CuGeS₂/GeS₂-based super-linear-threshold-switching (SLTS) selector device with the insertion of optimal TiN liner thickness exhibited outstanding electrical characteristics and reliability. The dependency of electrical characteristics and reliability on various TiN liner thicknesses were investigated. In addition, the principles of reliability and electrical characteristics improvement were understood through the energy dispersive spectroscopy elemental mapping and line profile of Cu. The adequate amount of Cu distributed in GeS₂ resistive switching layer is a key factor to achieve excellent electrical characteristics and reliability for an ultra-high-density 3D cross-point array cell.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1094-1096
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• 2002

A new technique for improving the efficiency of single-phase high-frequency boost converter is proposed. This converter includes an additional low-frequency boost converter which is connected to the main high-frequency switching device in parallel. The additional converter is controlled at lower frequency. Most of the current flows in the low-frequency switch and so, high-frequency switching loss is greatly reduced accordingly. Both switching device are controlled by a simple method; each controller consists of a comparator, a frequency generator and an error amplifier. The converter works cooperatively in high efficiency and acts as if it were a conventional high-frequency boost converter with one switching device, The proposed method is verified by simulation and experiment. This paper describes the converter configuration and design, and discusses the steady-state performance concerning the switching loss reduction and efficiency improvement.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.447-448
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• 2012

With wireless power transfer the of ECR device the designed with a high-frequency and high frequency AC power to the device that may enter the high-frequency switching inverter to be possible. In this paper, is designed to 2MHz switching frequency by using ECR device capable of 2MHz Class ${\Phi}_2$ inverter was designed as a wireless power transmission.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.918-921
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• 2004

In a motor drive, the current rating is directly related to the rating of a switching device, and the parallel switching operation for a cost reduction is the alternatives because it has the smaller current rating through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. This paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. The proposed strategy is verified by theoretical and experimental results.

• The Journal of Natural Sciences
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• v.18 no.1
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• pp.9-16
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• 2007

The electro-optic Q-switching device for medical high power laser depends on the relation between the population inversion and the Q-switching time. The polarization changes in applied voltage must be experimented to use each $LiNbO_3$ crystal for Q-switching in high power laser.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.530-535
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• 2004

We have studied 90$^{\circ}$ twisted nematic mode switching by fringe electric field(F-TN mode) using a liquid crystal (LC) with negative dielectric anisotropy. In the device, two polarizers are parallel each other, electrodes exist only on bottom substrate, and one of rubbing direction is coincident with polarizer axis. Therefore, the cell shows a black state before a voltage is applied. With a bias voltage generating fringe-electric field, the LC twists perpendicular to fringe electric field such that the LCs are almost homogeneously aligned except near the bottom surface since the negative type of the LC is used. Consequently, the new device exhibits much wider viewing angle than that of the conventional TN mode due to in-plane switching and relatively high transmittance since the LC director above whole electrode area aligns parallel to the polarizer axis.