• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• Electronic Materials Letters
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• v.14 no.6
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• pp.700-711
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• 2018

CdS synthesized by the chemical bath method at $70^{\circ}C$, has been used as an electron transport layer in the planar structure of the perovskite solar cells. A two-step spin process produced a mixed halide perovskite of $CH_3NH_3PbI_{3-x}Cl_x$ and a mixture of $PbCl_2$ and $PbI_2$ was deposited on CdS, followed by a sub-sequential reaction with MAI ($CH_3NH_3I$). The added $PbCl_2$ to $PbI_2$ in the first spin-step affected the structure, orientation, and shape of lead halides, which varied depending on the content of Cl. A small amount of Cl enhanced the surface morphology and the preferred orientation of $PbI_2$, which led to large and uniform grains of perovskite thin films. In contrast, the high content of Cl produces a new phase PbICl in addition to $PbI_2$, which leads to the small and highly uniform grains of perovskites. An improved surface coverage of perovskite films with the large and uniform grains maximized the performance of perovskite solar cells at 0.1 molar ratio of $PbCl_2$ to $PbI_2$. The depth profiling of elements in both lead halide films and mixed halide perovskite films were measured by Rutherford backscattering spectroscopy, revealing the distribution of chlorine along with the thickness, and providing the basis for the mechanism for enhanced preferred orientation of lead halide and the microstructure of perovskites.

• Journal of Ginseng Research
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• v.45 no.1
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• pp.58-65
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• 2021

Background: Panax ginseng, as one of the most widely used herbal medicines worldwide, has been studied comprehensively in terms of the chemical components and pharmacology. The proteins from ginseng are also of great importance for both nutrition value and the mechanism of secondary metabolites. However, the proteomic studies are less reported in the absence of the genome information. With the completion of ginseng genome sequencing, the proteome profiling has become available for the functional study of ginseng protein components. Methods: We optimized the protein extraction process systematically by using SDS-PAGE and one-dimensional liquid chromatography mass spectrometry. The extracted proteins were then analyzed by two-dimensional chromatography separation and cutting-edge mass spectrometry technique. Results: A total of 2,732 and 3,608 proteins were identified from ginseng root and cauline leaf, respectively, which was the largest data set reported so far. Only around 50% protein overlapped between the cauline leaf and root tissue parts because of the function assignment for plant growing. Further gene ontology and KEGG pathway revealed the distinguish difference between ginseng root and leaf, which accounts for the photosynthesis and metabolic process. With in-deep analysis of functional proteins related to ginsenoside synthesis, we interestingly found the cytochrome P450 and UDP-glycosyltransferase expression extensively in cauline leaf but not in the root, indicating that the post glucoside synthesis of ginsenosides might be carried out when growing and then transported to the root at withering. Conclusion: The systematically proteome analysis of Panax ginseng will provide us comprehensive understanding of ginsenoside synthesis and guidance for artificial cultivation.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.498-504
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• 2011

We examined the microstructure and optical properties of crystallized ~30 nm-ZnO/~10 nm amorphous $TiO_2$ nano bilayered films as nano electrodes were deposited at extremely low substrate temperatures of $150-210^{\circ}C$. The bilayered films were deposited on silicon substrates with 10 cm diameters by ALD (atomic layer deposition) using DEZn (diethyl zinc(Zn(C2H5)2)) and TDMAT (tetrakis dimethyl-amid $titanium(Ti(N(CH_3)_2)_4)$ as the ZnO and $TiO_2$ precursors, respectively, and $H_2O$ as the oxidant. The microstructure, phase, and optical properties of the bilayered films were examined by FE-SEM, TEM, XRD, AES, and UV-VIS-NIR spectroscopy. FE-SEM and TEM showed that all bilayered films were deposited very uniformly and showed crystallized ZnO and amorphous $TiO_2$ layers. AES depth profiling showed that the ZnO and $TiO_2$ films had a stoichiometric composition of 1:1 and 1:2, respectively. These bilayered films have optical absorption properties in a wide range of ultraviolet wavelengths, 250-390 nm, whereas the single ZnO and $TiO_2$ films showed an absorption range of 350-380nm.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.27-36
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• 2006

We fabricated thermally evaporated 10 nm-Ni/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si and 10 nm-Ni/l nm-Pt/(poly)Si films to investigate the thermal stability of nickel monosilicides at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides of 50 nm-thick were formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to examine sheet resistance. A scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An X-ray diffractometer and an Auger depth profiler were used for phase and composition analysis, respectively. Nickel silicides with platinum have no effect on widening the NiSi stabilization temperature region. Nickel silicides with iridium farmed on single crystal silicon showed a low resistance up to $1200^{\circ}C$ while the ones formed on polycrystalline silicon substrate showed low resistance up to $850^{\circ}C$. The grain boundary diffusion and agglomeration of silicides lowered the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.5C
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• pp.293-301
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• 2008

Soil profiling is one of the most important work among geotehnical engineering practice. Generally, soil profile is estimated from the observation of soil samples during subsurface exploration but such estimation also includes some experiencing aspects such as flushed water from the borehole, slime colour, boring speed and so on. In addition, since the capacity of hydraulic drill rig is significantly increased, thin layers might be easily missed. So, continuous soil profile is almost impossible over all depth to be bored from conventional subsurface exploration. While CPT or CPTu can serve continuous soil profile information over all depth generally in 5cm interval. Many charts or methods for soil profile from CPT result have been proposed during last several decades over the world. However they have not been verified in local ground condition in Korea. In this research, CPT results and soil classification results based on USCS were compiled from 17 sites over the Korea. Soil classification results by using 7 CPT soil classification charts were compared with those of USCS for the compiled database. Most proper CPT soil classification chart for Korean soil characteristics was evaluated and effective parameters for the soil classification from CPT were discussed. Finally interrelationship between CPT soil classification chart and USCS soil classification was evaluated.

• The Journal of Engineering Geology
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• v.7 no.2
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• pp.113-126
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• 1997

Electrical resistivity methods of dipole - dipole array profiling and Schiumberger array sounding were tested on a segment of the Woraksan granitic batholith for the research into the imaging of irregular attitudes of fracture zones in the crystaaline rock in terms of processing and interpretation schemes. By the dipole - dipole array method, inhomogeneities such as small scale of fracture zones were properly delineated down at some depth even within hard rock environment. Fracture zones were interpreted to be at the boundaries between the high amplitude zone and very low amplitude zone in the resistivity plot and they were also successfully outlined in two - dimensional layer and pseudo - three - dimensional volume constructed by the incorporation of vertical sounding data. The surface location of the fracture zones was correlated by the zero - crossing point in the VLF(very low frequency) electromagnetic data. Pseudo - three - dimensional attitudes of fracture zones were efficiently illuminated by optimum projection angle. The mean of bulk resistivity for the Woraksan granite and the near fracture zones is estimated to be approximately of 4,000 ohm - m which is much higher than the value of 700 ohm - m for the Rwachunri limesilicate environment. This difference is due to both the rock type, i.e., biotite granite vs limesilicate, and the occurrence of secondary openings of fold and fault associated with the intrusion of granite. In this study statistical analyses on the resistivity color plot were performed in terms of three representative statistical moments, i.e., standard deviation, skewness, and kurtosis. The fracture zones in the standard deviation plot were characterized by the higher value, compared to the value of homogeneous portion. The upper boundary of the high resistivity zone was also successfully delineated in the skewness and kurtosis plots.