• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.8 s.185
• /
• pp.47-53
• /
• 2006

The purpose of this study was to investigate the significant characteristics in spray of industrial etch-nozzle for the design of process. The experiment was carried out with different spray pressure and industrial nozzle in wet etch. The characteristics of liquid spray, such as axial velocity and sauter mean diameter measurements were obtained by PDA. And impact force was calculated from spray characteristics. It was found that the fluid with higher spray pressure resulted in the smaller SMD and the higher droplet velocity and impact force. The depth of etch was increased in case of high spray pressure. In the case of injection angle oscillated between $20^{\circ}$, the result indicated constant effect of etch. The correlation between the spray characteristics and etch ones were analyzed. The depth of etch had good positive correlation with axial velocity and impact force. The result clearly shows that the characteristics in wet etch are strongly related to the spray characteristics with process.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.5 no.2
• /
• pp.128-131
• /
• 2004

In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.4
• /
• pp.32-38
• /
• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.3
• /
• pp.32-38
• /
• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.65-65
• /
• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• Journal of Photoscience
• /
• v.10 no.1
• /
• pp.97-104
• /
• 2003

The excitation wavelength dependence of laser ablation dynamics of an azobenzene-containing urethane-urea copolymer film was investigated by measuring the laser fluence dependence of etch depth, transient absorbance change at each excitation wavelength, and transient absorption spectra. Moreover expansion/contraction dynamics was studied by applying nanosecond time-resolved interferometry. The threshold was determined at several excitation wavelengths from etch depth measurement, while time-integrated absorbance was obtained under excitation conditions. The photon energy required to remove the topmost of surface layer of the film did not .depend on excitation wavelength, and the penetration depth of excitation pulse dominated the etch depth. When the excitation wavelength was longer than 500 nm, permanent swelling was clearly observed but not for shorter wavelength excitation. In the latter case, photoisomerization occurred during excitation and the following photoreduction may play an important role. On the basis of the observations made in this study, a photochemical and photothermal mechanisms can explain mostly the short and long wavelength excitation results, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.501-504
• /
• 1999

In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.9
• /
• pp.438-443
• /
• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.05a
• /
• pp.41-41
• /
• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• The korean journal of orthodontics
• /
• v.23 no.1 s.40
• /
• pp.75-88
• /
• 1993

Recent reports indicate that shorter etching times than 60 seconds can be adopted without affecting the bond strength and clinical disadvantages. The purpose of this in vitro study was to compare the shear bone strength and to measure depth of etch at different etching time length. One hundred and eight extracted bovine lower central incisors were embedded each in a tooth cup with cold-cure acrylic resin. The facial surfaces of the teeth were ground wet with 600-, 800-, 1000-, and 1200-grit Sic papers, and finally polished with a water slurry of extrafine silicon carbide powder, washed with tap water, and dried with hot air. Nine groups of nine prepared teeth were etched with a commercial($38\%$ phosphoric acid solution) for 0, 5, 10, 15, 20, 30, 60, 90, and 120 seconds, respectively, rinsed with tap water, and dried with hot air. One conditioned teeth from every group was selected randomly for the scanning electron microscopic examination, and the remaining eight teeth of the groups were used for measuring the push shear bond strength after bonding brackets and immensing them in the $36.5^{\circ}C$ water for 24 hours. Another nine groups of three teeth were used for measuring the depth of etch and surface roughness with a surface profilometer. after pieces of adhesive tape of 3mm inner diameter positioned on the ground enamel surfaces, and etched with the above mentioned. The data obtained form the above expeiments were analysed statistically with one way ANOVA and Dunkan's multiple range test with the $95\%$ confidence level. The results and conclusion of the study were as follows; 1. The results of shear bond strength for the given experimental etching times were not statistically different, but showed the tendency of decreasing shear bone strength after over 60 seconds etching times. 2. On the scanning election microscopic examination, it was observed that the morphological patterns of etched enamel surface for 5 to 20 seconds were similar and consitent, and those for 30 to 120 seconds showed increasing over-etched patterns depending on the length of etching times. 3. The depth of etch was increased almost proportionally by the length of etching times, but it was not associated with the shear bond strength. 4. The surface roughness increased depending on the length of etching times, but it was not associated with the shear bond strength. 5. This experiment indicated that proper etching time with $38\%$ phosphoric acid solution is in the range of 5 to 30 seconds.