• Korean Journal of Materials Research
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• v.23 no.1
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• pp.7-12
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• 2013

The $Cu_2ZnSnS_4$ (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of $300^{\circ}C$ without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to $1{\mu}m$. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.280-284
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• 2008

In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.

• Journal of Korea Society of Digital Industry and Information Management
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• v.15 no.4
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• pp.63-70
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• 2019

The subject of the simultaneous measuring system of base pattern and deposition pattern is a new research topic on a defect inspection of OLED. In this paper, we propose a new OLED inspection method that simultaneously measures standard and deposition pattern images. This method reduces unnecessary processes and tac time during OLED inspection. For an additional reduction of the tac time during pattern measurement, the ROI was configured to measure only in the designated ROI area instead of measuring the entire area of an image. During the ROI set-up, the value of effective deposition pattern area is included so that if the deposition pattern is out of the ROI zone, it would be treated as a defect before measuring the size and center point of the pattern. As a result, the tac time and inspection process could be shortened. The proposed method also could be applied to the OLED manufacturing process. Production of OLED could be increased by reducing tac time and inspection process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.33-40
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• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.5
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• pp.44-50
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• 2011

The effect of deposition time in arc ion plating on surface properties of the TiN-coated SM45C steel is presented in this paper. The surface roughness, micro-particle, micro-hardness, coated thickness, atomic distribution of TiN, and adhesion strength are measured for various deposition times. It has been shown that the deposition time has a considerable effect on the micro-hardness, the coated thickness, and the atomic distribution of TiN of the SM45C steels but that it has little influence on the surface roughness and adhesion strength.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.107.2-107.2
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• 2012

We used the electrophoretic deposition (EPD) process to fabricate a glass composite and investigated the EPD parameters to find the optimum deposition time by understanding the relationship among the process parameters of zeta potential (ZP), pH, deposition yield and saturation point. A binder and a dispersing agent were mixed properly with glass frit ($0.2{\sim}25{\mu}m$, d50=$8.77{\mu}m$) in an ethyl alcohol medium for the preparation of the slurry. The pH and ZP were in an inverse relationship to each other due to the generation of $H_3O^+$ ions with the addition of the dispersing agent in the slurry. The acidic nature of the dispersing agent was resulted in a decrease of the pH and an increase of the ZP. Otherwise, the pH increased with the addition of the glass frit in the slurry because $H_3O^+$ ions were absorbed on the glass frit. Therefore, the $OH^-$ ions correspondingly increased. The saturation point of EPD was strongly correlated with the variation of the pH in the slurry; this is caused by a chemical reaction between the ethyl alcohol and the ions that make up the glass frit. An adjustment of the pH variation and the saturation point in the slurry can be established with respect to the optimum deposition time in the slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.503-506
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• 2000

YBCO superconducting thick films were prepared on Ag wire by electrophoresis in acetone and ethanol with chemically modified suspension. The addition of organic compounds, such as PEG, EG into suspension solution for improving critical current density was investigated. Surface state, deposition condition, pore distribution and cracks were investigated by using SEM photographs. Controlling preparation conditions were studied for reducing these defects. As a results, in acetone solution, the surface crack of samples was decreased with increasing PEG. On the contrary, the surface crack of sample was increasing with increasing the amount of EG. In ethanol solution without I$_2$, which was generally used for an electrolyte, the deposition time was longer than this of acetone. For that reason the sample deposition in ethanol time was needed with enough stirring time for suspending YBCO powder and deposition time.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.927-933
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• 1994

Alumina composite membranes were prepared by chemical vapor deposition (CVD) using aluminum-tri-isopropoxide as a precursor. Porous alumina supports were used in deposition, which were in disk shape with mean pore diameter of 0.1 ${\mu}{\textrm}{m}$ and prepared by slip-coasting process. film deposition morphology on porous support was simulated through depositing alumina film on polycrystalline silicon pattern, and its step coverage observed by SEM showed one deviated from uniform step coverage. N2 permeability through composite membranes and the pressure dependence decreased as the deposition time increased. Initially, the N2 permeability of the top layer was tend to decrease rapidly, and then the degree of decrease in N2 permeability was tend to diminish with deposition time. The N2 permeability increased with heat treatment temperature and the crack was generated in top layer at 100$0^{\circ}C$.