• Title/Summary/Keyword: Deposition reduction

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Electrocatalytic activity of Carbon-supported near-surface alloys (NSAs) for Electode reaction of Fuel cell (연료전지 전극 반응을 위한 카본 담지 표면 합금의 전기촉매 활성)

  • Park, In-Su;Lee, Kug-Seung;Choi, Baeck-Beom;Sung, Yung-Eun
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.11a
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    • pp.316-319
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    • 2006
  • There is a worldwide interest in the development and commercialization of Polymer Electrolyte Membrane Fuel Cells (PEMFCs) for vehicular and stationary applications. One of the major objectives is the reduction of loaded electrode materials, which is comprise of the Pt-based noble metals. In this paper, a novel chemical strategy is described for the preparation and characterization of carbon-supported and surface-alloys, which were prepared by using a successive reduction process. After preparing Au colloid nanoparticles, the deposition of Au colloid nanoparticles occurred spontaneously in the carbon black-dispersed aqueous solution. Then nano-scaled active materials were formed on the surface of carbon-supported Au nanoparticles. The structural and electrochemical analyses indicate that the active materials were deposited on the surface of Au nanoparticles selectively and that an at toying process occurred during the successive reducing process The carbon-supported & surface-alloys showed the higher electrocatalytic activity than those of the particle-alloys and commercial one (Johnson-Matthey) for the reaction of methanol and formic acid oxidation. The increased electrocatalytic activity might be attributed to the effective surface structure of surface-alloys, which have a high utilization of active materials for the surface reaction of electrode.

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Investigation of long-term stability of pentacene thin-film transistors encapsulated with transparent $SnO_2$

  • Kim, Woo-Jin;Koo, Won-Hoe;Jo, Sung-Jin;Kim, Chang-Su;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1276-1279
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    • 2005
  • The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent $SnO_2$ thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm $SnO_2$ film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over $10^5$ to that of the unprotected devices $({\sim}10^4)$ which was reduced from ${\sim}10^6$ before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of $H_2O$ and $O_2$ into the devices by the IBAD $SnO_2$ thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

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Dielectric Properties of Ti-doped K(Ta,Nb)O3 Thin Films for Tunable Microwave Applications

  • Bae Hyung-Jin;Koo Jayl;Hong Jun-Pyo
    • Journal of Electrical Engineering and Technology
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    • v.1 no.1
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    • pp.120-126
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    • 2006
  • Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

Structural and Ferroelectric Properties of PZT Thin Films Deposited on SrRuO3 Electrode Films (SrRuO3 전극 박막 위에 증착된 PZT 박막의 구조 및 강유전 특성)

  • Lee, Myung Bok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.10
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    • pp.620-624
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    • 2016
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

Reduction of Contact Resistance Between Ni-InGaAs Alloy and In0.53Ga0.47As Using Te Interlayer

  • Li, Meng;Shin, Geon-Ho;Lee, Hi-Deok;Jun, Dong-Hwan;Oh, Jungwoo
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.5
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    • pp.253-256
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    • 2017
  • A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

Long-Term Stability for Co-Electrolysis of CO2/Steam Assisted by Catalyst-Infiltrated Solid Oxide Cells

  • Jeong, Hyeon-Ye;Yoon, Kyung Joong;Lee, Jong-Ho;Chung, Yong-Chae;Hong, Jongsup
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.50-54
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    • 2018
  • This study investigated the long-term durability of catalyst(Pd or Fe)-infiltrated solid oxide cells for $CO_2$/steam co-electrolysis. Fuel-electrode supported solid oxide cells with dimensions of $5{\times}5cm^2$ were fabricated, and palladium or iron was subsequently introduced via wet infiltration (as a form of PdO or FeO solution). The metallic catalysts were employed in the fuel-electrode to promote $CO_2$ reduction via reverse water gas shift reactions. The metal-precursor particles were well-dispersed on the fuel-electrode substrate, which formed a bimetallic alloy with Ni embedded on the substrate during high-temperature reduction processes. These planar cells were tested using a mixture of $H_2O$ and $CO_2$ to measure the electrochemical and gas-production stabilities during 350 h of co-electrolysis operations. The results confirmed that compared to the Fe-infiltrated cell, the Pd-infiltrated cell had higher stabilities for both electrochemical reactions and gas-production given its resistance to carbon deposition.

Implementation of an Intelligent Video Detection System using Deep Learning in the Manufacturing Process of Tungsten Hexafluoride (딥러닝을 이용한 육불화텅스텐(WF6) 제조 공정의 지능형 영상 감지 시스템 구현)

  • Son, Seung-Yong;Kim, Young Mok;Choi, Doo-Hyun
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.719-726
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    • 2021
  • Through the process of chemical vapor deposition, Tungsten Hexafluoride (WF6) is widely used by the semiconductor industry to form tungsten films. Tungsten Hexafluoride (WF6) is produced through manufacturing processes such as pulverization, wet smelting, calcination and reduction of tungsten ores. The manufacturing process of Tungsten Hexafluoride (WF6) is required thorough quality control to improve productivity. In this paper, a real-time detection system for oxidation defects that occur in the manufacturing process of Tungsten Hexafluoride (WF6) is proposed. The proposed system is implemented by applying YOLOv5 based on Convolutional Neural Network (CNN); it is expected to enable more stable management than existing management, which relies on skilled workers. The implementation method of the proposed system and the results of performance comparison are presented to prove the feasibility of the method for improving the efficiency of the WF6 manufacturing process in this paper. The proposed system applying YOLOv5s, which is the most suitable material in the actual production environment, demonstrates high accuracy (mAP@0.5 99.4 %) and real-time detection speed (FPS 46).

Trend in Research and Application of Hard Carbon-based Thin Films (탄소계 경질 박막의 연구 및 산업 적용 동향)

  • Lee, Gyeong-Hwang;Park, Jong-Won;Yang, Ji-Hun;Jeong, Jae-In
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.111-112
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    • 2009
  • Diamond-like carbon (DLC) is a convenient term to indicate the compositions of the various forms of amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon and tetrahedral amorphous carbon (a-C:H and ta-C:H). The a-C film with disordered graphitic ordering, such as soot, chars, glassy carbon, and evaporated a-C, is shown in the lower left hand corner. If the fraction of sp3 bonding reaches a high degree, such an a-C is denoted as tetrahedral amorphous carbon (ta-C), in order to distinguish it from sp2 a-C [2]. Two hydrocarbon polymers, that is, polyethylene (CH2)n and polyacetylene (CH)n, define the limits of the triangle in the right hand corner beyond which interconnecting C-C networks do not form, and only strait-chain molecules are formed. The DLC films, i.e. a-C, ta-C, a-C:H and ta-C:H, have some extreme properties similar to diamond, such as hardness, elastic modulus and chemical inertness. These films are great advantages for many applications. One of the most important applications of the carbon-based films is the coating for magnetic hard disk recording. The second successful application is wear protective and antireflective films for IR windows. The third application is wear protection of bearings and sliding friction parts. The fourth is precision gages for the automotive industry. Recently, exciting ongoing study [1] tries to deposit a carbon-based protective film on engine parts (e.g. engine cylinders and pistons) taking into account not only low friction and wear, but also self lubricating properties. Reduction of the oil consumption is expected. Currently, for an additional application field, the carbon-based films are extensively studied as excellent candidates for biocompatible films on biomedical implants. The carbon-based films consist of carbon, hydrogen and nitrogen, which are biologically harmless as well as the main elements of human body. Some in vitro and limited in vivo studies on the biological effects of carbon-based films have been studied [$2{\sim}5$].The carbon-based films have great potentials in many fields. However, a few technological issues for carbon-based film are still needed to be studied to improve the applicability. Aisenberg and Chabot [3] firstly prepared an amorphous carbon film on substrates remained at room temperature using a beam of carbon ions produced using argon plasma. Spencer et al. [4] had subsequently developed this field. Many deposition techniques for DLC films have been developed to increase the fraction of sp3 bonding in the films. The a-C films have been prepared by a variety of deposition methods such as ion plating, DC or RF sputtering, RF or DC plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance chemical vapor deposition (ECR-CVD), ion implantation, ablation, pulsed laser deposition and cathodic arc deposition, from a variety of carbon target or gaseous sources materials [5]. Sputtering is the most common deposition method for a-C film. Deposited films by these plasma methods, such as plasma enhanced chemical vapor deposition (PECVD) [6], are ranged into the interior of the triangle. Application fields of DLC films investigated from papers. Many papers purposed to apply for tribology due to the carbon-based films of low friction and wear resistance. Figure 1 shows the percentage of DLC research interest for application field. The biggest portion is tribology field. It is occupied 57%. Second, biomedical field hold 14%. Nowadays, biomedical field is took notice in many countries and significantly increased the research papers. DLC films actually applied to many industries in 2005 as shown figure 2. The most applied fields are mold and machinery industries. It took over 50%. The automobile industry is more and more increase application parts. In the near future, automobile industry is expected a big market for DLC coating. Figure 1 Research interests of carbon-based filmsFigure 2 Demand ratio of DLC coating for industry in 2005. In this presentation, I will introduce a trend of carbon-based coating research and applications.

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Electrochemical Characteristics of Zn and Si Ion-doped HA Films on Ti-6Al-4V by PEO Treatment

  • Lim, Sang-Gyu;Hwang, In-Jo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.199-199
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    • 2016
  • Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

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Wall flow characteristics with static mixer position and housing geometry for preventing urea-salt deposition (우레아염 퇴적 방지를 위한 믹서 위치 및 하우징 형상에 따른 벽면 유동특성에 관한 연구)

  • Lee, Banguk;Lee, Jeekeun
    • Journal of Advanced Marine Engineering and Technology
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    • v.37 no.4
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    • pp.368-377
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    • 2013
  • The Urea-SCR system commercialized shows a remarkable performance to reduce NOx emission in heavy duty diesel engines. However, Urea-water solution injected upstream a mixer, which is set up inside a exhaust pipe to promote exhaust gas-atomized droplet mixing, bumps up against the wall of a exhaust pipe as the droplets flow downstream through the exhaust gas. The urea deposited on the wall of the exhaust pipe is changed into the Urea-salt, resulting in the decreased life-time of the SCR catalysts. Therefore, the development of the urea deposition avoidance technologies is being treated as an important issue of the Urea-SCR systems. An experimental study was carried out to investigate the effects of the wall flow characteristics around the mixer-housing assembly with the variation of the mixer housing surrounding and supporting the mixer, which is designed to increase the wall flow and then to reduce droplet deposition. The flow characteristics was investigated by using a hot-wire anemometry for 2-D simplified duct model, and the housing tilt angles and the position of the mixer were changed : angle of $0^{\circ}$, $1^{\circ}$, $2^{\circ}$, $3^{\circ}$, and mixer positions of 0L, 0.5L, 1L. The results showed that the wall flow onto the exhaust pipe was improved with changing the tilt angle of the mixer housing, and the wall flow improved more when the position of the mixer was on 1L.