• Journal of Powder Materials
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• v.5 no.2
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• pp.111-121
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• 1998

Thick and dense deposit of higher than 97% of theoretical density was formed by induction plasma spraying. To investigate the effects of powder morphology on the density of deposit, two different kinds of Yttria-Stabilized-Zirconia powder, METCO202NS (atomized & agglomerated) and AMDRY146 (fused & crushed), were used and compared. After plasma treatment, porous METCO202NS powder was all the more densely deposited and its density was increased. In addition to the effect of powder morphology, the process parameters such as, sheath gas composition, probe position, particle size and spraying distance, and so on, were evaluated. The result of experiment with AMDRY146 powder, particle size and spraying distance affected highly on the density of the deposit. The optimum process condition for the deposition of -75 ${\mu}m$ of 20%-Yttria-Stabilized-Zirconia powder was 120/201/min of Ar/$H_2$ gas rate, 80 kW of plasma plate power, 8 cm of probe position and 150 Torr of spraying chamber pressure, at which its density showed 97.91% of theoretical density and its deposition rate was 20 mm/min. All the results were assessed by statistical approach what is called ANOVA.

• Proceedings of the Korean Geotechical Society Conference
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• 1992.10a
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• pp.61-64
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• 1992

Recently, by the lack of fill material, the dredg and fill(hydraulic fill) method is commonly used in reclamation projects. Hydraulic fill method dredges the soil and send it with water through the transportation pipe to the site. The intial state of the hydraulic fill material is accordingly the mixture of water and soil skeleton which settles with time forming a new soil layer. The properties of new soil layer is governed the size of the soil skeleton, the flow velocity of mixing water, salt concentration, the distance from the discharge pipe outlet, and other dredging conditions when settling process occur. In this study, the effects of gradation of derdged soil on the deposition properties (with emphasis on the optimum spacing of the discharge pipes) was investigated by field test. It was found that the soft fine graind soil was forme at 350m from the discharge pipe outlet when the dredged material was classified as CL, while the soft fine grained soil was not formed even at the distance farther than 400m from the diacharge pipe outlet when the dredged material was classified as SM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.163-169
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• 2000

In this paper, we showed the erosion characteristic of MgO protector layer releated to lifetime of plasma display panel(PDP). We observed MgO erosion characteristic as a functions of deposition conditions, pressure and distance between electrodes. In RIE condition of Xe gas, the lowest erosion rate appears in the conditions of no heating bias voltage -30V and pressure 5mtorr. In general, as deposition rate increases, erosion rate decreases. In real panel, when the gap distance between electrodes is narrow and the pressure is low, the heavy plasma damage appears. Also, the surfaces between electrodes and on the bus electrode are extremely damaged.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.216-221
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• 1998

A study on induction plasma deposition with ceramic materials, yttria-stabilized-zirconia ZrO$_2$-Y$_2$O$_3$ (m.p 264O $^{\circ}C$), was conducted with a view developing a new method for nuclear fuel fabrication Before making dense pellets more than 96％TD., the spraying condition was optimized through the process parameters, such as chamber pressure, plasma plate power powder spraying distance, sheath gas composition, probe position, particle size and powders different morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed a 97.11％ theoretical density when the sheath gas flow rate was Ar/H$_2$120/20 l/min, probe position 8cm, particle size -75 ${\mu}{\textrm}{m}$ and spraying distance 22cm by AMDRY146 powder. The degree of influence of the main effects on density were powder morphology. particle size, sheath gas composition, plate power and spraying distance, in that order. Among the two parameter interactions, the sheath gas composition and chamber pressure affects density greatly. By using the multi-pellets mold wheel type, the pellet density did not exceed 94%T.D., owing to the spraying angle.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.196-202
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• 2004

A numerical simulation based on the finite element method is used to investigate the effect of a reciprocal paddle on the uniformity of deposition rates at a patterned electrode. The calculated deposition rates agreed well with the measured values. The influences of the paddle velocity, the gap between cathodes and paddles, anode size and the distance between the anode and cathode have been studied. The optimum conditions on the paddle and geometric factors for electrodeposit uniformity could be obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.147-150
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• 2007

Electro-deposition of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The carbon films with smooth surface morphology and high electrical resistance were formed when the distance between electrode was relatively wider. The electrical resistance of the carbon films were independent of both current density and solution temperature.

• Journal of ILASS-Korea
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• v.11 no.2
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• pp.59-68
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• 2006

Experimental results of the metal powder production with internal mixing, internal impinging and the atomizer coupled with substrate design are presented in this paper. In a test with internal mixing atomizer, mean powder size was decreased from $37{\mu}m\;to\;23{\mu}m$ for Pb65Sn35 alloy as the gas-to-melt mass ratio was increased from 0.04 to 0.17. The particle size further reduces to $16.01{\mu}m$ as the orifice area is increased to $24mm^2$. The micrograph of the metal powder indicates that very fine and spherical metal powder has been produced by this process. In a test program using the internal impinging atomizers, the mean particle size of the metal powder was decreased from $22{\mu}m\;to\;12{\mu}m$ as the gas-to-melt-mass ratio increased from 0.05 to 0.22. The test results of an atomizer coupled with a substrate indicates that the deposition rate of the molten spray on the substrate is controlled by the diameter of the substrate, the height of the substrate ring and the distance of the substrate from the outlet of the atomizer. This in rum determines the powder production rate of the spraying processes. Experimental results indicate that the deposition rate of the spray forming material decreases as the distance between the substrate and the atomizer increases. For example, the deposition rate decreases from 48% to 19% as the substrate is placed at a distance from 20cm to 40cm. On the other hand, the metal powder production rate and its particle size increases as the subsrate is placed far away from the atomizer. The production of metal powder with mean particle size as low as $3.13{\mu}m$ has been achieved, a level which is not achievable by the conventional gas atomization processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.