• Journal of the Korean institute of surface engineering
• /
• v.22 no.3
• /
• pp.128-134
• /
• 1989

Mechanism of cobalt deposition was investigated using the potentiodynamic potentiostatic methods in solution of pH 4 and pH6.4 In all experimental conditions, polarization curves showed two regions with different Tafel slopes and the reaction order of cobalt ion was varied with the pH. It is belived that the deposition mechanism depends not only on the portential but also on the ph.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.06a
• /
• pp.321-322
• /
• 2009

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.78-78
• /
• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• Proceedings of the KIEE Conference
• /
• 1991.07a
• /
• pp.171-173
• /
• 1991

the poly silicon film was deposited by APCVD. and then the deposition mechanism and electrical characteristics was investigated for that film. The grain phase, the deposition rate, and the etch characteristics were evaluated according to the deposition conditions. The criteria temperature of surface morphology state was $730^{\circ}C {\sim}780^{\circ}C$ between the mirror phase grain and the powder phase grain.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.10
• /
• pp.1786-1790
• /
• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1301-1303
• /
• 1997

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.354-358
• /
• 1996

High indium incorporation was observed in InGaAs growth by precursor alternating metalorganic chemical vapor deposition (PAMOCVD). A possible mechanism of high indium incorporation into the crystal in PAMOCVD was proposed by considering the decomposition products of gallium and indium precursors, and thus the different adsorption behavior of the decomposed precursor molecules.

• Journal of ILASS-Korea
• /
• v.1 no.1
• /
• pp.28-34
• /
• 1996

Study on the mechanism of droplet transport and the droplet eddy diffusivity in the intake manifold of internal conbustion engine with carburetor has been carried out in this paper The theory and experiments were studied and performed respectively, to elucidate the mechanism and to measure typical rates of deposition, on the walls of a straight type intake manifold, of water droplets suspended in a turbulent air streams. Accordingly, the results are that Mechanism of a spray transport to the walls is caused by the fluctuation component of radial velocity. Deposition rate of a spray on the walls is mainly dependent upon air velocity and mean diameter of spray, and Droplet eddy diffusivity in the intake manifold is around $80\sim105cm^2/sec$.

• Journal of the Korean Ceramic Society
• /
• v.24 no.6
• /
• pp.543-552
• /
• 1987

The effects of deposition variables on SnO2 CVD were investigated for SnCl4＋O2 reaction at 300∼700$^{\circ}C$, Psncl4=1${\times}$10-5∼1${\times}$10-3 atm, and Po2=5${\times}$10-4∼1 atm. A thermodynamic equilibrium study on Sn-Cl-O system has been performed with the computer calculation. The calculation indicates that major species participating the reaction in SnCl4 and not intermediate species, SnCl2. Good uniformity of the film thickness was obtained at the flow rate of 11cm/sec, which resulted from the stable gas flow in our cold wall reactor. The experimental results showed that apparent activation energy of the deposition was about 13.5Kcal/mole below the temperature of 500$^{\circ}C$ and the deposition mechanism was controlled by surface reation. The behavior of deposition rate on the reactant partial pressures could be explained with the Langmuri-Hinshelwood mechanism. X-ray study demonstrated that SnO2 film deposited at temperatures above 400$^{\circ}C$ were polycrystalline with tetragonal rutile structure and grew with (211) and (301) preferred orientations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.346-346
• /
• 2008

최근 디지털 컨버젼스에 의해서 정보 단말기 network가 디지털 기술을 기반으로 유기적으로 융 복합화 되고 있으며 BT, NT, ET, IT의 융합 기술의 필요성이 점차적으로 증대되고 있다. 이러한 환경 하에서 다양한 정보 및 서비스의 송신 및 수신이 가능한 휴대 단말기의 필요성에 부응하여 기존의 전화 기능, 카메라, DMB 이외에도 홈 네트워크, mobile internet 등 더욱 다양한 기능들이 요구되고 있다. 종래에는 수동 부품과 능동 부품의 실장을 별개로 추진했으나 최근에는 수동 및 능동 부품을 하나의 패키지 내에 실장 가능하도록 하는 3-D Integration을 추진하고 있다. 지금까지 여러 부품들을 실장 시키기 위한 공정들의 대부분은 높은 온도에서 공정이 이루어졌으나 여러 부품들을 손상 없이 집적화하고 실장하기 위해서는 저온화 공정이 필요하다. 최근 많은 저온 공정 중에서 Aerosol Deposition Method는 상온에서 세라믹 후막을 성막할 수 있어 가장 주목받고 있는 공정중의 하나이다. 본 연구에서는 3-D Integration을 실현하기 위해 이종 접합에 유리하고 상온에서 성막 공정이 이루어지는 Aerosol Deposition Method를 이용하여 금속 기판 위에 금속, 폴리머, 세라믹 후막을 성막시켰다. 기판 재료로는 Cu 기판을 사용하였으며 출발 파우더로는 Polyimide 파우더와 $Al_2O_3$ 파우더, Ag 파우더를 사용하였으며 이종 접합간의 메커니즘의 양상을 보기 위해 같은 조건에서 이종 접합간의 성막률을 비교하였으며 FE-SEM으로 미세 구조를 관찰하였다. 또한 기판의 표면 거칠기에 따른 메커니즘의 양상을 연구하였다.