Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1991.07a
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- Pages.171-173
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- 1991
the Deposition Mechanism & Characteristics for the Poly-Si Film
Poly-Si의 성장 기구와 제특성
- Kim, Sang-Wook (Dept. of Electrical Eng., Korea University) ;
- Park, Jong-Wook (Dept. of Electrical Eng., Korea University) ;
- Chun, Young-Il (Dept. of Electrical Eng., Korea University) ;
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Lee, Chul-Jin
(Dept. of Electrical Eng., Korea University)
;
- Sung, Young-Kwon (Dept. of Electrical Eng., Korea University)
- Published : 1991.07.18
Abstract
the poly silicon film was deposited by APCVD. and then the deposition mechanism and electrical characteristics was investigated for that film. The grain phase, the deposition rate, and the etch characteristics were evaluated according to the deposition conditions. The criteria temperature of surface morphology state was
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