• 전기화학회지
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• 제4권4호
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• pp.160-165
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• 2001

황산원자를 포함하는 mercapto화합물은 도금시 전착속도를 증가시키는 첨가제로 알려져 있는데, 이 중 4가지의 mercapto 화합물을 선정하여 농도를 변화시켜가며 Hull cell test, Haring-Blum cell test, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance)등을 이용하여 도금특성 및 throwing power를 알아보았다. Cathode polarization 및 EQCM을 통한 구리 전착량을 알아본 결과 4가지의 mercapto 화합물 중 3-mercapto-1-propanesulfonic acid가 activator로서 가장 적당하였으며, 그 농도가 20 ppm에서 throwing power를 증가시키고, 농도 및 활성 과전압이 오직 $Cl^-$만 포함되었을 때보다 cathodic scan시 100 mV 만큼 shift되어 증착속도를 증가시킴을 알 수 있었다.

• 한국세라믹학회지
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• 제42권9호
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 한국진공학회지
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• 제16권3호
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• pp.187-191
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• 2007

본 연구에서는 실리콘 웨이퍼 위에 마그네트론 스퍼터링 시스템을 이용하여 Ni 촉매 층을 증착시키고, $NH_3$와 $C_2H_2$ gas를 이용하여 탄소나노튜브를 성장시켰다. Hot-filament 플라즈마 화학기상 증착법으로 탄소나노튜브의 성장 온도는 350, 450, 550, $650^{\circ}C$로 변화시켰으며, 성장되어진 탄소나노튜브는 field emission scanning electron microscope(FESEM) 분석을 하여 관찰하였고, 접촉각 측정법을 이용하여 탄소나노튜브 층의 특성을 분석하였다. 결과적으로 성장 온도는 탄소나노튜브의 성장 특성을 변화시키는 중요한 요소이다.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.133-138
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• 2013

Acrylonitrile-butadiene-styrene (ABS) plastic is a polymer material extensively used in electrical and electronic applications. Nickel (Ni) thin film was deposited on ABS by electroless plating, after its surface was treated and modified with atmospheric plasma generated by means of dielectric barrier discharges (DBDs) in air. The method in this study was developed as a pre-treatment for electroless plating using DBDs, and is a dry process featuring fewer processing steps and more environmentally friendliness than the chemical method. After ABS surfaces were modified, surface morphologies were observed using a scanning electron microscope (SEM) to check for any physical changes of the surfaces. Cross-sectional SEM images were taken to observe the binding characteristics between metallic films and ABS after metal plating. According to the SEM images, the depths of ABS by plasma are shallow compared to those modified by chemically treatment. The static contact angles were measured with deionized (DI) water droplets on the modified surfaces in order to observe for any changes in chemical activities and wettability. The surfaces modified by plasma showed smaller contact angles, and their modified states lasted longer than those modified by chemical etching. Adhesion strengths were measured using 3M tape (3M 810D standard) and by 90° peel-off tests. The peel-off test revealed the stronger adhesion of the Ni films on the plasma-modified surfaces than on the chemically modified surfaces. Thermal shock test was performed by changing the temperature drastically to see if any detachment of Ni film from ABS would occur due to the differences in thermal expansion coefficients between them. Only for the plasma-treated samples showed no separation of the Ni films from the ABS surfaces in tests. The adhesion strengths of metallic films on the ABS processed by the method developed in this study are better than those of the chemically processed films.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 한국생산제조학회지
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• 제25권1호
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• pp.30-35
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• 2016

Tandem arc welding is a guarantor for high efficiency and cost saving since the quantity of wire which is deposited in the welding is approximated 30% greater that in conventional welding. The welding process is now being successfully applied in many industries. However, in the case of tandem arc welding, good quality and high productivity should depend on the welding parameters. Therefore, an intelligent algorithms for the automatic tandem arc welding process has been necessarily required. In this study, a predictive model based on the neural network by using the data acquired during tandem gas metal arc (GMA) welding process has been developed. To verify the reliability of the developed predictive model, a mutual comparison with the surface of the top-bead width obtained from actual experiments has been analyzed.

• 대한기계학회논문집B
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• 제38권2호
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• pp.139-146
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• 2014

수소화붕소나트륨은 수소 에너지를 저장 및 공급할 수 있는 안정된 금속 물질이다. 본 논문에서는 탈수소 화학반응기 유로 설계를 위해 수력학적 직경 $461{\mu}m$를 가지는 마이크로채널에서 수소화붕소나트륨 수용액의 탈수소 화학반응이 일어날 때 수용액과 수소 기체 간의 이상유동 계면마찰에 대하여 실험연구를 수행하였다. 화학반응기 마이크로채널은 직사각 단면으로 높이 $300{\mu}m$, 너비 1 mm, 길이 50 mm 로 실리콘 웨이퍼에 공정되었으며, 가수분해 촉진을 위해 루테늄을 촉매로서 100 nm 두께로 채널 표면에 증착하였다. 가시화 결과 Re 수 30 이하에서 기포유동 양상이 관측되었다. 이상마찰승수는 기포율에 선형적으로 비례하며, 탈수소 화학반응기를 설계할 때 계면마찰에 영향을 미치는 수용액의 초기농도, 촉매 화학반응률, 체류시간을 고려해야 된다.

• 비파괴검사학회지
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• 제34권3호
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• pp.233-240
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• 2014

나노/마이크로 소자의 개발이 활발해짐에 따라 나노/마이크로 박막의 기계적 물성의 정밀 측정에 대한 필요성이 점차 커지고 있다. 기존의 파괴적인 방법의 한계를 극복하기 위한 방법으로, 유도초음파를 이용한 비파괴적인 박막 물성 방법에 대한 관심이 늘어나고 있다. 유도초음파를 이용하여 박막의 물성을 측정하는 실험을 설계하거나, 물성 측정에 대한 실험 결과를 이해하는데 있어 박막의 분산선도를 이해하는 것은 필수적이라 할 수 있다. 본 연구에서는, 전달 행렬법을 이용하여 박막의 분산선도를 계산하는 방법을 제시하고, 이를 금속 박막에 적용하여 그 특성을 관찰하였다. 전달 행렬법을 이용하여 다층판에서의 주파수에 따라 유도초음파가 전파하는 속도를 계산하여 상용 프로그램과 비교하여 그 타당성을 확인하였다. 이러한 방법을 Si 기판 위에 증착된 Al 금속 박막에 적용하여 얻은 분산곡선의 분석을 통해, 박막의 두께 조건에 따른 모드와 분산 및 비분산 특성이 나타나는 구간을 관찰할 수 있었다.