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http://dx.doi.org/10.4313/JKEM.2018.31.3.165

Metal Oxide-Based Heterojunction Broadband Photodetector  

Lee, Sang-eun (Department of Electrical Engineering, Incheon National University)
Lee, Gyeong-Nam (Department of Electrical Engineering, Incheon National University)
Ye, Sang-cheol (Department of Electrical Engineering, Incheon National University)
Lee, Sung-ho (Department of Electrical Engineering, Incheon National University)
Kim, Joondong (Department of Electrical Engineering, Incheon National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.3, 2018 , pp. 165-170 More about this Journal
Abstract
In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.
Keywords
$SnO_2$; Photodetector; Photoresponse; P-Si; ITO;
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