• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.33-38
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• 2007

We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at $80^{\circ}C$ under various pressure. Two NCAs were applied during joining. Thermal cycling test ($0^{\circ}C-55^{\circ}C$, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was $70-90m{\Omega}$ before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.1-6
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• 2010

CuInGaSe(CIGS) mixed-source was prepared by hydride vapor phase epitaxy (HVPE). Each metal was mixed in regular ratio and soaked at $1090^{\circ}C$ for 90 minutes in nitrogen atmosphere. After making the mixed-source to powder state, the pellet was made by the powder. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass evaporated Mo layer bye-beam evaporator. To confirm the crystallization, we measured X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312) and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.829-834
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• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.351-356
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• 2008

Thermally sprayed tungsten carbide-based powder coatings are being widely used for a variety of wear resistance applications. The coating deposited by high velocity processes such as high velocity oxy-fuel (HVOF) thermal spraying is known to provide improved wear resistant property. In this study, optimal coating process (OCP) is obtained by the study of coating properties such as surface hardness, porosity, surface roughness and microstructure of 9 coatings prepared by Taguchi program for 3 levels of four spray parameters. The Friction and wear behaviors of HVOF WC-CoCr coating prepared by OCP, electrolytic hard chrome (EHC) plating and Inconel718 (In718) are investigated by reciprocating sliding wear test at $25^{\circ}C$, $450^{\circ}C$. Friction coefficients (FC) of all of the 3 samples are decreased as increasing sliding surface temperature from $25^{\circ}C$ to $450^{\circ}C$. FC of WC-CoCr decreases as increasing the surface temperature from $0.33{\pm}0.02$ at $25^{\circ}C$ to $0.26{\pm}0.02$ at $450^{\circ}C$, showing the lowest FC among the 3 samples. Wear trace (WT) and wear depth (WD) of WC-CoCr are smaller than those of EHC and In718 both at $25^{\circ}C$ and $450^{\circ}C$. These show that WC-CoCr is highly recommendable for protective coating on In718 and other metal components.

• The Journal of the Korea Contents Association
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• v.22 no.10
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• pp.733-741
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• 2022

Among the various evidence found in maritime crimes, fingerprints and DNA are very important in that they can identify a suspect. In this study, 5 types of non-porous surfaces (plastic, stainless, glass, ceramic, FRP), which are often found as evidence in the actual marine environment, were selected, and latent and blood fingerprints were passed down and immersed at the Donghae Maritime Police Station's exclusive pier for about 7 days. After that, DNA extraction, quantification, and STR profile were analyzed after fingerprint developing CA fumming method and 4 powder methods (Swedish black powder, Concentrated black powder, Supranano red powder, Dazzle orange powder). Among the fingerprint developing methods, when Supranano red powder was applied, a relatively high amount of DNA was found. As a result of STR profile analysis, an average of 16.8 to 9 loci were secured, and all 20 were confirmed in glass and ceramic materials. As a result of the study, it was possible to secure the STR profile by extracting and quantifying DNA after applying the fingerprint developing method to virtual evidence immersed for about 7 days, and further research is needed to secure the STR profile by analyzing DNA after applying various fingerprint developing methods such as VMD and SPR.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Economic and Environmental Geology
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• v.55 no.6
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• pp.689-699
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• 2022

The Ssangjeon tungsten deposit is located within the Yeongnam Massif. Within the area a number of hydrothermal quartz veins were formed by narrow open-space filling of parallel and subparallel fractures in the metasedimentary rocks as Wonnam formation, Buncheon granite gneiss, amphibolite and/or pegmatite. Mineral paragenesis can be divided into two stages (stage I, ore-bearing quartz vein; stage II, barren quartz vein) by major tectonic fracturing. Stage I, at which the precipitation of major ore minerals occurred, is further divided into three substages (early, middle and late) with paragenetic time based on minor fractures and discernible mineral assemblages: early, marked by deposition of arsenopyrite with pyrite; middle, characterized by introduction of wolframite and scheelite with Ti-Fe-bearing oxides and base-metal sulfides; late, marked by Bi-sulfides. Fluid inclusion data show that stage I ore mineralization was deposited between initial high temperatures (≥370℃) and later lower temperatures (≈170℃) from H₂O-CO₂-NaCl fluids with salinities between 18.5 to 0.2 equiv. wt. % NaCl of Ssangjeon hydrothermal system. The relationship between salinity and homogenization temperature indicates a complex history of boiling, fluid unmixing (CO₂ effervescence), cooling and dilution via influx of cooler, more dilute meteoric waters over the temperature range ≥370℃ to ≈170℃. Changes in stage I vein mineralogy reflect decreasing temperature and fugacity of sulfur by evolution of the Ssangjeon hydrothermal system with increasing paragenetic time.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.142-150
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• 2023

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10^-4 Ω·cm and about 1.0×10^-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).