• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.291-297
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• 2019

Pyrolytic carbon (PyC) layers were deposited using methane. The PyC layer deposited with 5% methane showed highly textured graphite, while that deposited using 100% methane showed low textured graphite. The degrees of anisotropy of the carbon layers were measured using an X-ray diffractometer, a transmission electron microscope, and a Raman spectroscope, and the results were compared with those reported previously. The orientation angles obtained from the fast Fourier transformation of the high-resolution transmission electron microscopy images and the I_D/I_G intensity ratios obtained from the Raman spectra were used to evaluate the anisotropy of the PyC layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.283-283
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• 2007

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.727-732
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• 1996

In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

• Restorative Dentistry and Endodontics
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• v.12 no.2
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• pp.91-98
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• 1987

This study was designed to investigate the changing depositional pattern of inorganic enamel substances during enamel formation and maturation. For this purpose, white rat incisors which continuously grow and develop during the life, were chosen as specimens. And after treated with 20% KOH solution, outer surface of forming inorganic enamel were observed with the scanning electron microscope, dividing into 6 types according to the forming pattern from apical to cuspal direction. The observations lead to the following conclusions: 1. During the initial enamel forming stage, inorganic enamel substances were deposited with very irregular pyramidal shape on the root dentin surface. 2. During the enamel forming stage, inorganic enamel substances were deposited with relatively regular hexagonal, honey-comb appearance. 3. During the later enamel forming stage, inorganic enamel substances were deposited with very irregular and roughly amorphous appearance. 4. During the later enamel maturating stage, very small and round inorganic enamel substances were deposited densely, and made a flat enamel surface.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.372-376
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• 1999

The deposited Cu film on the ferrite magnet was more deposited comparing with that on the plastic magnet. The Cu film became thicker on the S pole comparing with that on the N pole in the both of magnets. The thickness and texture coefficient of deposited copper film affected with direction of line of magnetic force. The difference of pole had little or no effect to the texture coefficient of deposited nickel film. The reaction rate on ferrite magnet and S pole was faster comparing with that on plastic magnet and N pole.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.688-692
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• 2004

In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.428-430
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• 2009

C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.05a
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• pp.52-53
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• 1997

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.157-158
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• 2009