• 한국농공학회논문집
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• 제55권3호
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• pp.51-62
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• 2013

The importance of environmental water has been risen in terms of river ecosystem soundness with preventing stream flow depletion in rural area, while enlarging agricultural reservoir project is conducted under the 4 main river restoration project for supplying more water to 4 main rivers. The aim of this study was to estimate the amount of environmental water release and analyze the release pattern during non-irrigation season in enlarged agricultural reservoirs. The 4 reservoirs (Dansan, Samga, Geumbong, Changpyeong) located on the upper region of Nakdong river were simulated applying the operation rule which was determined by release criteria curves. The simulated results indicated that the more environmental water could be released than the spillway release and continuous release was achieved with smaller range of fluctuation. In case of Changpyeong reservoir, average 506.0 thousand $m^3$ environmental water could be released on Feb., and it was about twice as much as the spillway release before the enlargement, and also, the 18 thousand $m^3$/day environmental water could be supplied to a stream consistently after enlargement. From the results, it was expected that the additional environmental water release will improve stream water flow during dry season in terms of quantity and quality of water.

• 제어로봇시스템학회논문지
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• 제19권10호
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• pp.907-914
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• 2013

A FastSLAM is an algorithm for SLAM (Simultaneous Localization and Mapping) using a Rao-Blackwellized particle filter and its performance is known to degenerate over time due to the loss of particle diversity, mainly caused by the particle depletion problem in the resampling phase. In this paper, the GeSPIR (Geographically Stratified Particle Information-based Resampling) technique is proposed to solve the particle depletion problem. The proposed algorithm consists of the following four steps : the first step involves the grouping of particles divided into K regions, the second obtaining the normal weight of each region, the third specifying the protected areas, and the fourth resampling using regional equalization weight. Simulations show that the proposed algorithm obtains lower RMS errors in both robot and feature positions than the conventional FastSLAM algorithm.

• 한국산학기술학회논문지
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• 제7권1호
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• pp.7-11
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• 2006

SCM(Scanning Capacitance Method)를 이용하여, SCM 팁의 전계에 의해 형성되는 실리콘내의 공핍영역를 분석할 수 있는 방법론을 구축하였다. 2차원 유한요소법을 이용하여 SCM으로 측정된 결과로부터 불순물의 농도를 도출할 수 있었다. 이 방법은 캐패시턴스, 공핍화된 체적 및 바이어스에 따른 캐패시턴스의 변화율로부터 구해진다. 본 연구에서는 팁의 크기, 산화층 두께 및 가해지는 바이어스에 따른 공핍 전하와 전위에 따른 영향등을 분석하였다.

• 센서학회지
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Current Optics and Photonics
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• 제3권6호
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• pp.510-515
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• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.241-245
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• 2022

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2022년도 학술발표회
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• pp.157-157
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• 2022

Recent decades have seen all over the world increasing drought in some regions and increasing flood in others. Climate change has been alarming in many regions resulting in degradation and diminution of available freshwater. The effect of global warming and overpopulation associated with increasing irrigated farming and valuable agricultural lands could be particularly disastrous for coastal areas like the one of Benin. The coastal region of Benin is under a heavy demographic pressure and was in the last decades the object of important urban developments. The present study aims to roughly study the general effect of climate change (Sea Level Rise: SLR) and groundwater pumping on Seawater intrusion (SWI) in Benin's coastal region. To reach the main goal of our study, the region aquifer system was built in numerical model using SEAWAT engine from Visual MODFLOW. The model is built and calibrated from 2016 to 2020 in SEAWAT, and using WinPEST the model parameters were optimized for a better performance. The optimized parameters are used for seawater intrusion intensity evaluation in the coastal region of Benin The simulation of the hydraulic head in the calibration period, showed groundwater head drawdown across the area with an average of 1.92m which is observed on the field by groundwater level depletion in hand dug wells mainly in the south of the study area. SWI area increased with a difference of 2.59km² between the start and end time of the modeling period. By considering SLR due to global warming, the model was stimulated to predict SWI area in 2050. IPCC scenario IS92a simulated SLR in the coastal region of Benin and the average rise is estimated at 20cm by 2050. Using the average rise, the model is run for SWI area estimation in 2050. SWI area in 2050 increased by an average of 10.34% (21.04 km²); this is expected to keep increasing as population grows and SLR.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1308-1313
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• 2004

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.