• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.322-327
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• 2012

The strain effects of ZnSe epilayer on ZnSe/GaAs heterojunction structure grown by molecular beam epitaxy have been investigated by using electroreflectance (ER) spectroscopy. The ER measurements were performed as a function of modulation voltage, dc bias voltage, and temperature. From the room temperature ER spectrum, we observed a heavy-hole (HH: 2.609 eV) and light-hole (LH: 2.628 eV) transitions due to a compressive strain. With increasing the bias voltage, the amplitude of HH transition signal decreased and the amplitude of LH transition signal was almost the same. From the temperature dependence of ER spectra, we have studied the interaction between the strain and the thermal expansion coefficient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.224-227
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• 2002

In this paper, we have investigated the physical properties and electrical conduction properties of polyethylene terephthalate film due to temperature variation, and the measurement of volume resistivity used to highmegohm meter is measured from 1 to 10 minutes when the specimen applied the voltage accroding to the step voltage appling method. From FT-IR spectrum as an analysis of physical properties, the strong absorption in wavenumbers $1019[cm^{-1}]$, $1266[cm^{-1}]$ and $1752[cm^{-1}]$ observed by the C=O and benzene ring. From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature $80[^{\circ}C]$ and $263[^{\circ}C]$, respectively.

• Journal of The Korean Astronomical Society
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• v.53 no.3
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• pp.59-67
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• 2020

We propose semi-analytic models for the electron momentum distribution in weak shocks that accounts for both in situ acceleration and re-acceleration through diffusive shock acceleration (DSA). In the former case, a small fraction of incoming electrons is assumed to be reflected at the shock ramp and pre-accelerated to the so-called injection momentum, p_inj, above which particles can diffuse across the shock transition and participate in the DSA process. This leads to the DSA power-law distribution extending from the smallest momentum of reflected electrons, p_ref, all the way to the cutoff momentum, p_eq, constrained by radiative cooling. In the latter case, fossil electrons, specified by a power-law spectrum with a cutoff, are assumed to be re-accelerated from p_ref up to p_eq via DSA. We show that, in the in situ acceleration model, the amplitude of radio synchrotron emission depends strongly on the shock Mach number, whereas it varies rather weakly in the re-acceleration model. Considering the rather turbulent nature of shocks in the intracluster medium, such extreme dependence for the in situ acceleration might not be compatible with the relatively smooth surface brightness of observed radio relics.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.1-6
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• 1990

We studied two-photon-resonant three-photon ionization processes via 4D[channel #1] and 5S(channel #2] intermediate state of Na atom in a quartz ionization cell. For each channel. the bandwidth of ionization spectrum increased linearly with laser intensity and the ionization signal followed J3 dependence at low intensity. Compared with channel # 1 . ionization signal of channel #2 was enhanced by a factor of 20 - 25. The measured AC Stark shift factor of 3S - 4I) transition was $174\pm60MHz/MW/textrm{cm}^2$..

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.100-105
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• 1994

Ni-Fe thin films are deposited on the corning glass substrate by means of RF magnetron sputtering system In order to investigate the dependence of the prorerties of Ni-Fe thin films on the film thickness, ferromagnetic reson¬ance spectrum has been examined. The effective magnetization $M_{eff}$ is constant for all samples, while the exchange stiffness constant A increases with the film thickness. A tendency that spectroscopic splitting factor g increases with the sample thickness, we expect that the increase of the contribution of the orbital motion to the magnetic moment as a reason for it.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.279-283
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• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.6-9
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• 2000

Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm $^{4}$I$_{13}$ 3/ to $^{4}$I/wub 15/2/ emissions of the multiple Er$^{3+}$ centers observed in Er-implante undoped and Mg-doped GAN at temperatures ranging from 6K to 295K. The temperature dependence of the Er$^{3+}$ PL spectra selectively excited by below -gap light demonstrates different quenching rates for the distinct Er$^{3+}$ centers, and indicates that the PL spectra with the most rapid thermal quenching rats do not contribute to the room temperature, above-p-pumped Er$^{3+}$ spectrum. In addition, selective PL spectroscopy has ben carried out on the Er$^{3+}$ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging 6K to 295K. The results indicate that the previously reported enhancement of the violet-pumped centers contribution to the low temperature above excited Er$^{3+}$ PL in Mg-doped GaN is also evident at room temperature.temperature.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.120-124
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• 1994

PBH-DFB-LD emitting at $1.55\mu\textrm{m}$ wavelength has been fabricated for 2.5 Gbps optical fiber communications. For fabrication of PBH-DFB-LD. inteference expose for grating formation and 3-step LPE epitaxial growth was used. Fabricated PBH-DFB-LD operates in single longitudinal mode with more than 35dB SMSR and its threshold current is less than 15 mA. The operating wavelength is 1530-1550 nm with the temperature dependence of $0.9\AA/^{\circ}C$. Coupling coefficient(K) was estimated as $$97 cm^{-1} by means of stop-band measurement. PBH-DFB-LD fabricated in this experiment can be applicable as light source for 2.5 Gbps optical fiber communication system. ystem.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.311-318
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• 2013

The paper describes the prediction method for the unsteady flow field and the aeroacoustic noise of an small axial fan. The prediction method is comprised of various CFD conditions and acoustic analogy by using Ffowcs Williams-Hawkings equation. The diameter of tested axial fan is 170 mm and number of blade is 5. Virtual anechoic room which has same size with real one was used for CFD. URANS and LES models were used. For mesh dependence study, a different mesh type was tested and optimized mesh was selected. Calculation conditions were also studied such as time step and turbulence model for accurate noise analysis. In this paper, we got optimum analysis conditions and computational results. The unsteady pressure fluctuation at given 4 points were compared between the measured data and computational results. Also, the predicted acoustic spectrum at 3 given microphone points were compared with measured ones.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.247-251
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• 2001

Photoluminescence(PL) were observed from room temperature to 8K on $Si^+$-implanted silicon-oxide films. The PL intensities are increased from room temperature to 50~80K and decreased below 50K. The blue-shift occurs during the increasing of PL intensity. Also, temperature-dependent PL were measured at peak wavelengths. The first peak is the most sensitive to the measuring temperature. The experimental results are explained by quantum size effect of O rich defects or(and) Si rich defects rather than nanocrystal silicon.