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Photoluminescence characteristics of ZnTe single crystal thin films substi-tuted by sulfur  

최용대 (목원대학교 광ㆍ전자물리학과)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.13, no.6, 2003 , pp. 279-283 More about this Journal
Abstract
In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.
Keywords
Hot-wall epitaxy; ZnTe : S single crystal thin film; Photoluminescence; Isoelectronic center;
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