• Title/Summary/Keyword: Degraded Material

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Tensile Behavior Characteristics of CANDU Pressure Tube Material Degraded by Neutron Irradiations (중수로 압력관 재료의 조사 열화에 따른 인장거동 특성)

  • An, Sang-Bok;Kim, Yeong-Seok;Kim, Jeong-Gyu
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.1
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    • pp.188-195
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    • 2002
  • To investigate the degradation of mechanical properties induced mainly by neutron irradiation, the tensile tests were conducted from room temperature to 300\\`c using the irradiated and the unirradiated Zr-2.5Nb pressure tube materials. The irradiated longitudinal and transverse specimens were collected from the coolant inlet, middle, and outlet parts of M-11 tube which had been operated in Wolsung CANDU Unit-1 and exposed to different operating temperatures and irradiation fluences. The different tensile behavior was characterized not by the fluences of irradiation but by the tensile loading direction. The transverse specimen showed the higher strength and lower elongation than those of the longitudinal one. It was believed that these phenomena resulted from the microstructure anisotropy caused by the extrusion process. The increased strength hardening and decreased elongation embrittlement of the irradiated material were compard to those of the unirradiated one. While the tensile strength of the inlet was higher than that of the outlet, the elongation of the inlet was lower than that of outlet. Considering the operation condition, it was proposed that the operating temperature could be a more effective parameter than the irradiation fluence for long-time life. Through the TEM observation, it was found that while the a-type dislocation density was increased, the c-type dislocation was not changed in the irradiated. The fact that the higher dislocation density was sequentially distributed over the inlet, the middle, and the outlet parts was consistent with the distribution of the tensile strength.

Degradation Estimation of 2.25Cr-1Mo Steel by Ultrasonic Guided Wave (유도초음파를 이용한 2.25Cr-1Mo재의 열화도 평가)

  • Park, Ik-Keun;Park, Un-Su;Lee, Sang-Young;Kwun, Sook-In;Cho, Youn-Ho;Yoon, Seung-Hyun
    • Journal of the Korean Society for Nondestructive Testing
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    • v.21 no.4
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    • pp.415-424
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    • 2001
  • The destructive method is reliable and widely used for the estimation of material degradation but, it have time-consuming and a great difficulty in preparing specimens from in-service industrial facilities. Therefore, the estimation of degraded structural materials by nondestructive evaluation is strongly desired. In this paper, the use of guided wave was suggested for the evaluation on thermally damaged 2.25Cr-1Mo steel as an alternative way to compensate for limitations of fracture tests. The observation of microstructure variations of the material including carbide precipitation increase and spheroidization near grain boundary was conducted and the correlation with the guided wave features such as energy loss ration and group velocity changes was investigated. Through this study, the feasibility of ultrasonic guided wave evaluation for thermally damaged materials was explored.

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Effect of Sintering Temperature on Electrical Stability of $Pr_{6}O_{11}$-Based ZnO Varistors ($Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 안정성에 소결온도의 영향)

  • 남춘우;류정선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.640-646
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    • 2001
  • The electrical stability for DC stress of Pr$_{6}$O$_{11}$-based ZnO varistos consisting of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$-based ceramics were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. A the sintering temperature is raised, the nonlinear exponent of varistors was decreased, whereas the stability was markedly improved. The density of ceramics was found to greatly affect the electrical stability for DC stress. The varistors sintered at 13$25^{\circ}C$ were completely degraded because of thermal runaway attributing to low density. The varistors sintered at 1335$^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 70.53 and a leakage current of 1.92$\mu$A, whereas they did not exhibit relatively high stability. On the contrary, the varistors sintered at >134$0^{\circ}C$ exhibited not only a high nonlinearity marking the nonlinear exponent above 50 and the leakage current below 3$\mu$A, but also a high stability marking the variation rate of the varistor voltage below 2%, even under DC stress such as (0.80V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85V$_{1mA}$/115$^{\circ}C$/12h)+(0.90V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95V$_{1mA}$/15$0^{\circ}C$/12h). In particular, ti was found that the varistors sintered at 134$0^{\circ}C$ were more nonlinear and more stable, compared with that of 1345$^{\circ}C$.EX>.}C$.EX>.

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High Density Inductively Coupled Plasma Etching of III-V Semiconductors in BCI3Ne Chemistry (BCI3Ne 혼합가스를 이용한 III-V 반도체의 고밀도 유도결합 플라즈마 식각)

  • 백인규;임완태;이제원;조관식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1187-1194
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    • 2003
  • A BCl$_3$/Ne plasma chemistry was used to etch Ga-based (GaAs, AIGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a Planar Inductively Coupled Plasma (ICP) reactor. The addition of the Ne instead of Ar can minimize electrical and optical damage during dry etching of III-V semiconductors due to its light mass compared to that of Ar All of the materials exhibited a maximum etch rate at BCl$_3$ to Ne ratios of 0.25-0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to relatively high volatilities of their trichloride etch products (boiling point CaCl$_3$ : 201 $^{\circ}C$, AsCl$_3$ : 130 $^{\circ}C$, PCl$_3$: 76 $^{\circ}C$) compared to InCl$_3$ (boiling point : 600 $^{\circ}C$). We obtained low root-mean-square(RMS) roughness of the etched sulfate of both AIGaAs and GaAs, which is quite comparable to the unetched control samples. Excellent etch anisotropy ( > 85$^{\circ}$) of the GaAs and AIGaAs in our PICP BCl$_3$/Ne etching relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask. However, the surfaces of In-based materials are somewhat degraded during the BCl$_3$/Ne etching due to the low volatility of InCl$_{x}$./.

Growth Characteristics of Microorganism on Lapilli-Cement mixed Bioblocks (화산력-시멘트 혼합 바이오 블록의 미생물 생장 특성)

  • Park, Sung-Yong;Park, Duck-Hwan;Kim, Hyun-Sun;Kim, Jung-Myeon;Lim, Hyun-Taek;Bae, Su-Bin;Kim, Yong-Seong
    • Journal of The Korean Society of Agricultural Engineers
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    • v.57 no.1
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    • pp.111-118
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    • 2015
  • This research aims to utilize lapilli from the Mt. Baekdusan as environmently-friendly construction material. First of all, the neutralizing method for fabricating lapilli-cement-mixed bioblock was examined. And then, by use of the neuralized bioblock with microorganism for water purification, the growth inhibition effect against the pathogenic coliform bacillus was evaluated. The result regarding growth inhibition effect on pathogenic coliform bacillus indicates that the pretreatment condition, which is a concurrent procession with aqueous solution of 10% di-ammonium Phosphate after water curing, led to pH degraded below 10 which was the target value. Therefore it was concluded that the method was effective on bio-block neutralization. The microorganisms purifying water and di-ammonium phosphate were detected through the examination for microorganism existence on the bioblock, therefore it was concluded that the bioblock composed of lapilli and cement is able to be utilized in various structures as an environment friendly construction material.

Effect of Carbon on Electrode Characteristics of $LiCoO_2$ Resynthesis ($LiCoO_2$의 재합성시(再合成時) 전극특성(電極特性)에 미치는 탄소(炭素)의 영향(影響))

  • Lee, Churl-Kyoung;Park, Jeong-Kil;Sohn, Jeong-Soo
    • Resources Recycling
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    • v.16 no.6
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    • pp.10-19
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    • 2007
  • The mechanical process followed by hydrometallurgical treatment has been developed in order to recover cobalt and lithium from spent lithium ion battery. In the previous study, a citrate precursor combustion process to prepare cathodic active materials from the leaching solution was elucidated. Resynthesis of electrode materials should be more valuable in spent battery recycling. Conventional slurry mixing of $LiCoO_2$ and carbon cannot make uniform distribution, and therefore the cathode cannot reach the theoretical charge-discharge capacity and is easily degraded during the charge-discharge cycling. In this study, ultra-fine $LiCoO_2$ powders has been prepared by modification of the combustion process and fabricated the enhanced cathode by modification of mixing method of $LiCoO_2$ and carbon added.

Effects of the Heat Treatment Temperature and Thickness of YBCO Film Fabricated by TFA-MOD Method (TFA-MOD법을 이용한 YBCO 박막의 열처리 온도와 두께의 영향)

  • Jang Seok-Hern;Lim Jun-Hyung;Lee Jin-Sung;Yoon Kyung-Min;Kim Kyu-Tae;Joo Jin-Ho;Kim Chan-Joong;Nah Wan-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.5
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    • pp.467-476
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    • 2006
  • We fabricated the YBCO films on LAO substrate using the TFA-MOD method and evaluated the effects of heat treatment temperature and film thickness on the microstructure, degree of texture, and critical properties. The calcining and firing were peformed at the temperature range of $370^{\circ}C-460^{\circ}C\;and\;750^{\circ}C-800^{\circ}C$, respectively. For the films fired at $775^{\circ}C$ after calcining at $400^{\circ}C-430^{\circ}C$showed highest critical temperature (Tc-onset) of 89.5 K and critical current (Ic) of 40A/cm-width which corresponds to critical current density (Jc) of $1.8MA/cm^2$. The highest critical properties are probably attributed to the formation of purer YBCO phase, stronger biaxial texture, and higher oxygen content, according to the XRD, pole-figure, SEM, Raman analysis. From the multi-coated films, the Ic increased from 39 to 169 A/cm-width as the coating repeated to four times, while the corresponding Jc was measured from once to be in the range of $0.8-1.2MA/cm^2$. Both Ic and Jc degraded as the coating repeated further, indicating that the optimum thickness is in the range of $1.0{\mu}m-1.7{\mu}m$.

STARBURST AND AGN CONNECTIONS AND MODELS

  • SCOVILLE NICK
    • Journal of The Korean Astronomical Society
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    • v.36 no.3
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    • pp.167-175
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    • 2003
  • There is accumulating evidence for a strong link between nuclear starbursts and AGN. Molecular gas in the central regions of galaxies plays a critical role in fueling nuclear starburst activity and feeding central AGN. The dense molecular ISM is accreted to the nuclear regions by stellar bars and galactic interactions. Here we describe recent observational results for the OB star forming regions in M51 and the nuclear star burst in Arp 220 - both of which have approximately the same rate of star formation per unit mass of ISM. We suggest that the maximum efficiency for forming young stars is an Eddington-like limit imposed by the radiation pressure of newly formed stars acting on the interstellar dust. This limit corresponds to approximately 500 $L_{\bigodot} / M_{\bigodot}$ for optically thick regions in which the radiation has been degraded to the NIR. Interestingly, we note that some of the same considerations can be important in AGN where the source of fuel is provided by stellar evolution mass-loss or ISM accretion. Most of the stellar mass-loss occurs from evolving red giant stars and whether their mass-loss can be accreted to a central AGN or not depends on the radiative opacity of the mass-loss material. The latter depends on whether the dust survives or is sublimated (due to radiative heating). This, in turn, is determined by the AGN luminosity and the distance of the mass-loss stars from the AGN. Several AGN phenomena such as the broad emission and absorption lines may arise in this stellar mass-loss material. The same radiation pressure limit to the accretion may arise if the AGN fuel is from the ISM since the ISM dust-to-gas ratio is the same as that of stellar mass-loss.

Improved Production of Ligninase and Laccase by Phanerochaete chrysosporium and Ceriporiopsis subvermispora (Phanerochaete chrysosporium과 Ceriporiopsis subvermispora 균주(菌株)의 Ligninase 및 Laccase 생산최적조건에 관한 연구(硏究))

  • Kang, An-Seok;Cha, Dong-Yeul;Kim, Kyung-Soo;Hong, In-Pyo;Croan, Suki C.;Yu, Seung-Hun
    • The Korean Journal of Mycology
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    • v.22 no.3
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    • pp.254-259
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    • 1994
  • The ever increasing demand for energy and the shortage of resources all over the world have generated interest in recycling renewable sources such as lignocelluloses which otherwise would go to waste and cause environmental pollution. Lignin is the incrustation material for cellulose and hemicellulose, therefore, cellulose and hemicellulose are not easily degraded. Recycling lignocellulosic wastes as agricultural material are benefit to everybody and everything. In order to improve ligninase and laccase production of Phanerochaete chrysosporium, BKM-F-1767 and Ceriporiopsis subvermispora, FP 90031-SP, were compared. The ligninase activity of P. chrysosporium was maximum on day 4.5 of shaking culture at 150 rpm 2.5 cm in a back and forth cycle. The laccase activity of C. subvermispora was maximum on day 5.5 for 2% malt extract+0.1% yeast extract+0.1% Tween 20+6 mM Benzyl alcohol culture medium at stationary state.

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Growth of Organic/Inorganic MAPbI3 Perovskite Thin Films via Chemical Vapor Deposition (화학 기상 증착법을 이용한 유/무기 MAPbI3 페로브스카이트 박막 성장)

  • Jung, Jang-Su;Eom, Jiho;Pammi, S.V.N.;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.315-320
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    • 2020
  • Methylammonium lead iodide (MAPbI3) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI2) and lead bis (dipivaloylmethanate) [Pb(dpm)2] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI2 precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI3 thin films degraded into the PbI2 phase. In contrast, for the Pb(dpm)2 precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)2 is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI3 thin films were successfully grown on glass substrates using Pb(dpm)2. The rms (root-mean-square) roughness of MAPbI3 thin films formed from Pb(dpm)2 was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI2. The grain size of the films formed from Pb(dpm)2 was as large as approximately 350 nm.