• 한국세라믹학회지
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• 제46권5호
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• pp.510-514
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• 2009

The microstructure and mechanical behavior of deformed silicon were characterized using transmission electron microscopy and nanoindentation. Structural defects such as stacking faults and dislocations were observed through the diffraction contrast in transmission electron microscopy. The mechanical properties of deformed Si and 111 Si wafer and mechanical behaviors during contact loading were also characterized using nanoindentation. The hardness values of silicon samples were ${\sim}10$ GPa and the elastic modulus were varied with indentation conditions. Elbow or pop-out behaviors were found in load-displacement curves of silicon samples during nanoindentation. Deformed silicon showed 'pop-out' behavior more frequently under the load of 10 mN, which is attributed to the structural defects in deformed silicon.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.54-58
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• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.

• 한국세라믹학회지
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• 제33권3호
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• pp.277-284
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• 1996

The water test results indicated that the impurities had detrimetal effect on the wear resistance of silicon nitride and the effects were getting severe as the temperature increased. Especially when Ca existed as an impurity the detrimental effects was the most severe. These results were resulted from the fact that impurities lowered the mechanical properties of the grain boundary phase of silicon nitride. The wear test results of glass/glass-ceramic specimens having a similar composition to the grain boundary phase of silicon nitride revea-led that the specimen containing CaO showed the lowest wear resistance. The existence of Fe and Ca at the grain boundary phase assisted forming a grain boundary phase with relatively low refractoriness. Therefore at a given wear condition the removal of deformed layer would be easier. The results showed that the glass phases could be modified by heat-treatment and this modification improved tribological characteristics of the silicon nitride.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.518-520
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• 2007

Since all essential property of semiconductor materials are structure-sensitive, the understanding of the deformation mechanism and the deformed structure which can be formed in the nanometer-scale devices is very crucial. To investigate the deformation mechanism and the corresponding structures, nanometer-scale contact loading simulations are carried out using molecular dynamics in silicon and gallium-arsenide.

• 한국결정학회지
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• 제11권4호
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• pp.207-211
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• 2000

In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90。 apart will be displaced about 33° and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining.

• 대한기계학회논문집A
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• 제26권10호
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• pp.2044-2051
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• 2002

In this paper, the deformed shape, the contact forces and the load-displacement curves of the real hollow gasket made of silicon rubber are analyzed using a commercial finite element program MARC. In the numerical analysis, the silicon rubber is assumed to have the properties of the geometric and material nonlinearity and the incompressibility, and the hyperelastic constitutive relations of that material are represented by the generalized Mooney-Rivlin and Ogden models. The outer frictional contact between the hollow gasket and the groove of rigid container and the inner self-contact of the hollow gasket are taken into account in the course of numerical computation. Experiments are also performed to obtain the material data for numerical computation and to show the validity of the mechanical deformation of the hollow gasket, resulting in good agreements between them.

• 한국화재소방학회논문지
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• 제32권6호
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• pp.108-116
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• 2018

구리 용융흔(Melted bead) 미세조직(Microstructure)은 변형층(Deformed layer)과 원조직(Undeformed layer)으로 구분할 수 있다. 변형층이 존재하는 경우에는 측정오류가 발생되어 연마/미세연마(Grinding/Polishing)를 통하여 변형층을 제거하고 원조직을 관측하여야 한다. 이에 따라 본 연구에서는 구리 용융흔의 미세조직 분석을 위한 연마/미세연마 절차(Process)를 제시하였다. 변형층 제거를 위해 연마재 종류/크기, 연마시간, 연마율의 상관성을 분석하였고 변형층의 두께를 $1{\mu}m$ 이하가 되도록 하였다. 연구결과, 실리콘카바이드 연마재 $15{\mu}m$ (SiC P1200) 2 min, $10{\mu}m$ (SiC P2400) 1 min, 다이아몬드 연마재 $6{\mu}m$ 8 min, $3{\mu}m$ 6 min, $1{\mu}m$ 10 min, $.25{\mu}m$ 8 min 실시하는 새로운 연마/미세연마 절차를 제시하였다. 또한 최종 단계에서 3 min 동안 콜로이달 실리카 $.04{\mu}m$로 화학적 미세연마를 실시함으로써 미세조직의 선명성을 증대시키는 방안도 제시하였다. 연마/미세연마 시간은 총 38 min이 소요되며, 기존에 제시된 시간, 절차보다 단순화 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1442-1444
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• 1995

In this study, we confirmed that the crystallinity and the mechanical properties of polycrystalline Silicon(poly-Si) deposited on the poly-oxide are better than those of poly-Si on the conventional sacrificial layers that is CVD oxide layer or PSG. But the etch rate of poly-oxide is poor than that of the CVD oxide layer or PSG. Therefore, to make the best use of small stress and fast etch rate, we fabricated the double oxide layer; 10%-thick poly-oxide on 90%-thick CVD oxide or PSG. To estimate structure deformation by stress, we fabricated the test structures; cantilever. bridge and ring/beam structure and estimated by SEM. As the results, all structure is expressed the deformed structure by residual stress(tensile stress) and the deformation of the structure layer on the double oxide layer is small compared with that of the structure layer on the CVD oxide layer or PSG. And, the etch rate of the double oxide layer is enhanced compared with that of the poly-oxide.

• 한국표면공학회지
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• 제29권6호
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• pp.851-856
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• 1996

Copper Phthalocyanine (CuPc) thin films were fabricated on the silicon wafers by plasma activated evaporation method and structural analysis were carried out with various spectroscopies. The CuPc films had dense and smooth morphology and they also showed good mechanical properties and chemical resistance. The main molecular structure of the CuPc, which is the conjugated aromatic heterocyclic ring structure, was maintained even in the plasma process. However, metal-ligand (Cu-N) bands were deformed by the plasma process and the structure became amorphous especially at higher process pressures. Oxygen impurities were incorporated in the film and carboxyl functional groups were formed at the peripheral benzene ring. The structure and morphology of the films were dependent on the process pressure but relatively irrespective of the RF power.

• 마이크로전자및패키징학회지
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• 제23권2호
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• pp.79-84
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• 2016

유연전자소자가 외부힘에 의해 변형될 경우 반도체 다이가 기계적 응력 때문에 변형되거나 파괴되고 이러한 변형이나 파괴는 channel의 전자이동도를 변화시키거나 배선의 저항을 증가시켜 집적회로의 동작 오류를 발생시킨다. 따라서 반도체 집적회로는 굽힘 변형이 발생해도 기계적 응력이 발생하지 않는 중립축에 위치하는 것이 바람직하다. 본 연구에서는 굽힘변형을 하는 flip-chip 접합공정이 적용된 face-down flexible packaging system에서 중립축의 위치와 파괴 모드를 조사하였고 반도체 집적회로와 집중응력이 발생한 곳의 응력을 감소시킬 수 있는 방법을 제시하였다. 이를 위해, 설계인자로 유연기판의 두께 및 소재, 반도체 다이의 두께를 고려하였고 설계인자가 중립축의 위치에 미치는 영향을 조사한 결과 유연기판의 두께가 중립축의 위치를 조절하는데 유용한 설계인자임을 알 수 있었다. 3차원 모델을 이용한 유한요소해석 결과 반도체 다이와 유연기판 사이의 Cu bump 접합부에서 항복응력보다 높은 응력이 인가될 수 있음을 확인하였다. 마지막으로 flexible face-down packaging system에서 반도체 다이와 Cu bump 의 응력을 감소시킬 수 있는 설계 방법을 제안하였다.