• Composites Research
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• 제33권5호
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• pp.256-261
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• 2020

본 연구에서는 Al-Ti-C 반응계의 점화온도에 대해 고찰하고, 자전연소합성법 및 교반주조 공정을 통해 TiC/Mg 금속복합재료를 제조하여 미세조직 및 기계적 특성을 분석하였다. 0, 10, 20, 30 vol.% TiC 입자가 균일하게 분산된 Mg 복합재료를 제조하였고, 강화재의 양이 증가할수록 기지 대비 우수한 압축강도 및 내마모특성을 보였다. 이는 in-situ 자전연소합성법에 의해 결함이나 불순물 등의 오염이 적은 TiC/Mg 금속복합재료 제조로 기지에서 강화재로의 효과적인 하중 전달에 의한 것으로 판단된다.

• 한국재료학회지
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• 제9권5호
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• 한국표면공학회지
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• 제53권6호
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• 전자공학회논문지A
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• 제32A권2호
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• 한국정보통신학회논문지
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• 제21권5호
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• pp.861-868
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• 2017

도핑 되지 않은 반 절연 LEC GaAs내의 EL2와 얕은 준위 분포를 영상화하기 위해 대역단 적외선 영상 기법을 활용했다. 대역단 적외선 투사 매핑에 근거한 본 기법은 분석 속도가 빠르고 비파괴적인 방법이다. EL2 흡수 영상이 콘트라스트 반전되는 대역단 부근에 대한 정량적인 해석은 아직 보고되지 않고 있다. 본 논문은 대역단 부근에서 영상의 특정 부분(cell, wall)에 대한 포토퀀칭 메커니즘의 스펙트럼-, 공간- 및 온도- 종속성을 논하고 있다. 결함 부분별(EL2w, EL2b)로 포토퀀칭 개시점이 다른 것은 불순물 종류의 차이로 인한 서로 다른 전기적 작용에 기인한 것으로 해석할 수 있다. 전위(dislocation) 밀도가 높은 곳에서는 EL2b 밀도는 약간 적은 반면 EL2w 밀도는 보다 많다는 것을 정량적 해석으로부터 확인 했다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Current Optics and Photonics
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• 제6권5호
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• pp.497-505
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• 2022

Topological photonic nanocavities are considered to possess outstanding optical performance, and provide new platforms for realizing strong interaction between light and matter, due to their robustness to impurities and defects. Here hybrid plasmonic topological photonic nanocavities are proposed, by embedding various plasmon nanoantennas such as gold nanospheres, cylinders, and rectangles in a topological photonic crystal corner-state nanocavity. The maximum quality factor Q and minimum effective mode volume V_eff of these hybrid nanocavities can reach the order of 10⁴ and 10^-4 (𝜆/n)³ respectively, and the high figures of merit Q/V_eff for all of these hybrid nanocavites are stable and on the order of 10⁵ (𝜆/n)^-3. The relative positions of the plasmon nanoantennas will influence the coupling strength between the plasmon structures and the topological nanocavity. The hybrid nanocavity with gold nanospheres possesses much higher Q, but relatively large V_eff. The presence of a gold rectangular structure can confine more electromagnetic energy within a smaller space, since its V_eff is smallest, although Q is lowest among these structures. This work provides an outstanding platform for cavity quantum electrodynamics and has a wide range of applications in topological quantum light sources, such as single-photon sources and nanolasers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 보존과학회지
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• 제37권6호
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• pp.738-747
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• 2021

제철원료별 직접제련법 복원실험으로 생산된 단조박편의 재료과학적 분석을 통해 금속학적 특성을 규명하였다. 제련을 위해 경주감포사철과 양양철광석을 이용하며, 각각 4개의 그룹을 설정하였다. 분석은 주성분, 광물 동정, 미세조직 관찰을 하였다. 주성분 분석 결과 정련·단접이 진행될수록 Fe의 함량은 증가하고 비금속개재물의 함량은 감소하였다. 광물을 동정한 결과 산화철 계열의 광물이 확인되었다. 미세조직 관찰 결과 Wüstite, Fayalite가 관찰되었으며, 일부에는 응집된 Wüstite가 관찰되었다. 일부 다각형, 장주상의 Magnetite도 확인되었다. 또한, 공극 및 불순물, 비금속개재물은 점차 감소하였다. 차후 다양한 제철원료를 이용한 복원실험을 통해 생산된 단조박편의 재료과학적 분석을 통해 금속학적 특성을 규명하고, 이를 유적에서 출토된 단조박편과 비교·검토하는 것이 필요하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.118-119
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• 2013

High power, short wavelength red laser diodes (LDs) have attracted significant interests in a variety of fields due to their advantages in terms of reliability, compactness and cost. The higher brightness for human eyes is required, the shorter wavelength like 630 nm is necessary with higher output power. In this respect, LDs are promising as alternative candidates of gas or dye lasers for such applications due to their small size, high optical/electrical power conversion efficiency, robustness and so on. The crystalline quality of GaInP-AlGaInP multiple quantum wells (MQWs) and AlInP cladding layers is a crucial part in the device performance of GaInP red LDs. Here, we first investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP MQWs grown with different growth temperatures. Secondary ion mass spectroscopy (SIMS) measurements revealed that both the Mg and Si diffusion into MQW active region was significant. To reduce such diffusion, we employed undoped Mg and Si diffusion barrier and could improve the properties.Without both Mg and Si diffusion barriers, no lasing emission was observed. However, lasing emission was observed clearly for the red LDs with both Mg and Si diffusion barriers. We then investigated the temperature dependent optical properties of MQW layers grown with different well thicknesses (6, 8 and 10 nm). When the well thickness was 10 nm, the better crystalline quality was obtained. However, the observed LD performances were similar, probably due to the defects and impurities in the AlGaInP layer. Further investigation with the detailed analyses will be presented later.