• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.19 no.2
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• pp.215-223
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• 2021

The domestic CANDU nuclear power plants have been operated for a long time and various unforeseen spent fuel defects have been discovered. As the spent fuel defects are important factors in the safety of the nuclear power plant, a study on the analysis of the spent fuel defects to prevent their recurrence is necessary. However, in cases where the fuel rods inside the fuel assembly are defected, it is difficult to dismantle the fuel assembly owing to their welded structure and the facility conditions of the plant. Therefore, it is impossible to analyze the spent fuel defect because it is difficult to visually check the shape of the fuel defect. To resolve these problems, an analysis technology that can predict the number of defected fuel rods and defect size was developed. In this study, we developed a methodology for investigating the root cause of spent fuel defects using a database of the earlier fuel defects in the plants. It is anticipated that in the future this analysis technology will be applied when spent fuel defects occur.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.26 no.2
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• pp.197-203
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• 2000

Maxillary defect may be induced by trauma, inflammation, cyst, tumor and surgical procedure. In case of limited wall defect, free bone graft has been preferred. But it has some problems such as postoperative bone resorption and soft tissue inclusion to recipient site. And we can not use free bone in the case who has inflammation in the donor site. So we used the micro-titanium mesh as reconstructive material for the maxillary wall defect. We had operated 8 patients who were diagnosed as maxillary partial defects from June 1997 to September 1998 in the Chin-Hae military hospital. They were 1 case of antral wall defect, 1 case of palatal wall defect, 5 cases of infra-orbital wall defects and 1 case of oroantral fistula case. As a result, the micro-titanium mesh has shown the morphological stability and biocompatibility and it could be used in case who has infection. And mesh structure could prevent soft tissue ingrowth to bony defect area. Thus it can be used to the case of maxillary partial defect successfully.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.3
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• pp.261-270
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• 2010

This paper presents an analytical investigation for a baseline-free imaging of a defect in plate-like structures using the time-reversal of Lamb waves. We first consider the flexural wave (A0 mode) propagation in a plate containing a defect, and reception and time reversal process of the output signal at the receiver. The received output signal is then composed of two parts: a directly propagated wave and a scattered wave from the defect. The time reversal of these waves recovers the original input signal, and produces two additional side bands that contain the time-of-flight information on the defect location. One of the side band signals is then extracted as a pure defect signal. A defect localization image is then constructed from a beamforming technique based on the time-frequency analysis of the side band signal for each transducer pair in a network of sensors. The simulation results show that the proposed scheme enables the accurate, baseline-free detection of a defect, so that experimental studies are needed to verify the proposed method and to be applied to real structure.

• Journal of the Korean Ceramic Society
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• v.17 no.1
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• pp.5-7
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• 1980

The electrical conductivity of polycrystalline $Gd_2O_3$ has been measured over the temperature range of 650 to 100$0^{\circ}C$ under the oxygen pressure range of $10^{-6}$ to 102 torr. The oxygen pressure dependence of electrical conductivity, $\sigma$ PO211/n is characterized by n value of about 5.3. The defect structure and the type of the oxide are controlled by triply ionized metal vacancies and holes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.23-29
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• 2010

This paper presents a method for constructing a memory system using defective memory chips comprising faulty storage blocks. The three-dimensional memory system introduced here employs a die-stacked structure of faulty memory chips. Signals lines passing through the through-silicon-vias (TSVs) connect chips in the defect tolerant structure. Defective chips are classified into several groups each group comprising defective chips having faulty blocks at the same location. A defect tolerant memory system is constructed using chips from different groups. Defect-free storage blocks from spare chips replace faulty blocks using additional routing circuitry. The number of spare chips for defect tolerance is $s={\ulcorner}(k{\times}n)/(m-k){\urcorner}$ to make a system defect tolerant for (n+s) chips with k faulty blocks among m independently addressable blocks.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Smart Structures and Systems
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• v.33 no.1
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• pp.55-64
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• 2024

This paper proposes a fusion imaging-based coating-defect classification method for steel structures that uses zero-shot learning. In the proposed method, a halogen lamp generates heat energy on the coating surface of a steel structure, and the resulting heat responses are measured by an infrared (IR) camera, while photos of the coating surface are captured by a charge-coupled device (CCD) camera. The measured heat responses and visual images are then analyzed using zero-shot learning to classify the coating defects, and the estimated coating defects are visualized throughout the inspection surface of the steel structure. In contrast to older approaches to coating-defect classification that relied on visual inspection and were limited to surface defects, and older artificial neural network (ANN)-based methods that required large amounts of data for training and validation, the proposed method accurately classifies both internal and external defects and can classify coating defects for unobserved classes that are not included in the training. Additionally, the proposed model easily learns about additional classifying conditions, making it simple to add classes for problems of interest and field application. Based on the results of validation via field testing, the defect-type classification performance is improved 22.7% of accuracy by fusing visual and thermal imaging compared to using only a visual dataset. Furthermore, the classification accuracy of the proposed method on a test dataset with only trained classes is validated to be 100%. With word-embedding vectors for the labels of untrained classes, the classification accuracy of the proposed method is 86.4%.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.156-161
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• 1998

We have measured changes of the non-stoichiometry, $\Delta\delta$, in Fe-doped nicked oxide , by thermogravimetry for four iron fractions, x=0.01, 0.031, 0.057 and 0.10, and three temperatures, T=1273, 1373 and 1473 K. The obtained data can be modelled by a defect structure in which substitutional trivalent iron ions, FeNi, are compensated by cation vacancies, $V_{Ni}$", and (4:1)-clusters. These clusters consist of tetravalent interstitial iron, $Fe_i\;^4$

• Journal of the Korean Society for Nondestructive Testing
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• v.35 no.6
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• pp.407-413
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• 2015

Ultrasonic infrared thermography is an active thermography methods. In this method, mechanical energy is introduced to a structure, it is converted into heat energy at the defects, and an infrared camera detects the heat for inspection. The heat generation mechanisms are dependent on many factors such as structure characteristics, defect type, excitation method and contact condition, which make it difficult to predict heat distribution in ultrasonic infrared thermography. In this paper, a method to simulate frictional heating, known to be one of the main heat generation mechanisms at the closed defects in metal structures, is proposed for ultrasonic infrared thermography. This method uses linear vibration analysis results without considering the contact boundary condition at the defect so that it is intuitive and simple to implement. Its advantages and disadvantages are also discussed. The simulation results show good agreement with the modal analysis and experiment result.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.