• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• 한국자동차공학회논문집
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• 제23권5호
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• pp.471-477
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• 2015

In this study, the property of crack propagation and growth at high tension steel plate existed with center crack is investigated. The behaviors of fracture mechanics due to existence or not of hole near the center crack in specimen and the length of crack length are investigated when the load is applied at the one side end of specimen. Stress, deformation and deformation of this specimen are evaluated through simulation analysis. By the analysis results at this study, stress intensity factors are obtained. The damage happened at machine or structure with crack or defect can be estimated on the basis of study results.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권3호
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• 대한전자공학회논문지SD
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• 제47권12호
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• pp.24-30
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• 2010

수율과 품질을 유지하기 위하여 불량 셀을 예비 셀로 수리하는 방법이 많이 사용되고 있다. 대부분의 메모리가 2차원 예비셀 구조를 갖는 상황에서, 최근의 Giga 용량 메모리의 경우 대부분의 칩에서 예비 셀에도 불량이 존재 한다. 본 논문에서는 예비 셀에 불량이 있는 경우를 고려한 자체 내장 수리연산 시 기존의 모든 자체 내장 수리연산 회로에 적용이 가능한 분석 영역 가상화 방법을 제시하였다. 분석 영역 가상화 방법은 향후 메모리 고용량화에 따른 필수 해결 사항인 에비 셀 불량에 대한 효과적인 대처방안이 될 수 있을 것이다.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2623-2627
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• 2011

We investigated the surface structure and wetting behavior of octaneselenolate self-assembled monolayers (SAMs) on Au(111) formed in a 50 ${\mu}M$ ethanol solution according to immersion time, using scanning tunneling microscopy (STM) and an automatic contact angle (CA) goniometer. Closely-packed, well-ordered alkanethiol SAMs would form as the immersion time increased; unexpectedly, however, we observed the structural transition of octaneselenolate SAMs from a molecular row phase with a long-range order to a disordered phase with a high density of vacancy islands (VIs). Molecularly resolved STM imaging revealed that the missing-row ordered phase of the SAMs could be assigned as a $(6{\times}{\surd}3)R30^{\circ}$ superlattice containing three molecules in the rectangular unit cell. In addition, CA measurements showed that the structural order and defect density of VIs are closely related to the wetting behaviors of octaneselenolate SAMs on gold. In this study, we clearly demonstrate that interactions between the headgroups and gold surfaces play an important role in determining the physical properties and surface structure of SAMs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.340-351
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• 1995

Electrical, physical and optical properties of Aluminum(Al), Copper(Cu) thin films were investigated in order to establish the optimum sputtering parameters in Liquid Crystal Display (LCD) panel applications. DC-magnetron sputtered film on coming 7059 samples were fabricated with variations of deposition power densities, deposition pressures and substrate temperatures. Low resistivity films(AI;2.80 .mu..ohm.-cm, Cu:1.84 .mu..ohm-cm),which lower than the reported values, were obtained under sputtering parameters of power density(250W), substrate temperature(450-530.deg. C) and 5*10$\^$-3/ Torr deposition pressure. Expected columnar growth and stable grain growth of both films was observed through the Scanning Electron Microscope(SEM) micrographs. Dependency of the applicable defect-free film density upon depositon power and temperature was also characterized. Not too noticable variations in X-ray diffraction patterns were remarked under the alterations of sputtering parameters. High optical reflectivities of Al, Cu films, approximately 70-90 %, showed high degree of surface flatness.

• 열처리공학회지
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• 제11권3호
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• pp.177-185
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• 1998

The purpose of this research is to investigate the effects of Co, Co-Ti addition on the sintering characteristic of $(Ti_{1-x}Alx)N$ material synthesized by the direct nitriding method for a application as a cermet material. The observed shrinkage rates of $(Ti_{1-x}Alx)N$ pellets increase with the additive (Co, Co-Ti) content, temperature and time, and also the pellets with the same additive content exhibit the shrinkage behavior that depends on the Ti/Al ratio. However, although the shrinkage rates in this study is the mast higher (36%), the density of the sintered $(Ti_{1-x}Alx)N$ pellet is below 80% density in theory because of the partial segregation and the dense band defect of AlCo compound. Consequentely, it is considered that Co was not effective as a binder material because the wettability of liquid Co metal on $(Ti_{1-x}Alx)N$ materials is poor, In $(Ti_{1-x}Alx)N$ with Ti-Co additive, the stoichiometric TiN is transformed by the under-stoichiometric TiNx(x<1.0) during sintering, leading to the good properties such as hardnees and hot oxidation.

• 대한산업공학회지
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• 제41권6호
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• pp.579-587
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• 2015

Semiconductor manufacturing industry is a high density integration industry because it generates a vest number of data that takes about 300~400 processes that is supervised by numerous production parameters. It is asked of engineers to understand the correlation between different stages of the manufacturing process which is crucial in reducing production costs. With complex manufacturing processes, and defect processing time being the main cause. In the past, it was possible to grasp the corelation among manufacturing process stages through the engineer's domain knowledge. However, It is impossible to understand the corelation among manufacturing processes nowadays due to high density integration in current semiconductor manufacturing. in this paper we propose a canonical correlation analysis (CCA) using both wafer test voltage variables and fail bit counts variables. using the method we suggested, we can increase the semiconductor yield which is the result of the package test.

• 한국자동차공학회논문집
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• 제12권6호
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• pp.143-150
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• 2004

In this paper, resonant ultrasound spectroscopy(RUS) was used to determine the natural frequency of a ceramic ferrule and a ball lens. The ceramic ferrules are cylinderical shape with $\phi$ 2.56mm diameter and l0mm in length. Crack lengths of these ferrules are 10.40$\mu$m, 21.18$\mu$m and 32.35$\mu$m. The spherical ball lens was made of BK-7 glass, one's diameter in 2mm and 5mm. RUS system is consisted of spectrum analyzer, power amplifier, PZT sensor and support frame. The principle of RUS is that the mechanical resonant frequency of the materials depends on density and the coefficient of elasticity. Rus system is based on that given resonant frequency of the materials can be represented by the function of density and the coefficient of elasticity, and it is applied to excite specimen and to inspect the difference of natural frequency pattern between acceptable specimen and defective ones. Defect evaluation by RUS are performed to investigate the natural frequency measure of ferrule and ball lens.