• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1121-1127
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• 1994

The accelerated degradation phenomena in amorphous silicon thin film transistors due to both electrical stress and visible light illumination under the elevated temperature have been investigated systematically as a function of gate bias, light intensity, and stress time. It has been found that, in case of electrical stress, the thrshold voltage shifts of a-Si:H TFT's may be attributed to the defect creation process at the early stage, while the charge trapping phenomena may be dominant when the stressing periods exceed about 2 hours. It has been also observed that the degradation in the device characteristics of a-Si:H TFT's is accelerated due to multiple stress effects, where the defect creation mechanism may be more responsible for the degradation rather than the charge trapping mechanism.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.6 no.1
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• pp.78-82
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• 2010

The feeder pipe of Main Primary Heat Transfer System in Wolsong Nuclear Power Plant was inspected by the Ultrasonic Phase Array technique in 2010. It is the first time to apply this method to the construction at Nuclear Power Plant in Korea. The time required for UT technique is less than RT method. The UT method doesn't need to evacuate personnel who works nearby inspecting area and doesn't need to wait developing of film. For these reasons, the UT method is the fastest method among the volumetric inspections. As a result of the examination, it became clear that main defect of the feeder pipe is the Lack of fusion in the welded area. Moreover, the rate of defect was reduced gradually as improvement of welder's skill. If welding machine has problem, the defect has tended to same pattern(occurred same position in the welding area) but these defects were founded without specific rules. For these reasons, the creation of defect is dependent on the skill of worker not on the automatic welding machine. This evaluation of defect signal and collecting data would be useful to further examination in ISI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.387-393
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• 2016

Threshold voltage shift has been observed from many thin-film transistors (TFTs) and the time evolution of the shift can be modeled as the stretched-exponential and -hyperbola function. These analytic models are derived from the kinetic equation for defect-creation or charge-trapping and the equation consists of only reversible reactions. In reality TFT's a shift is permanent due to an irreversible reaction and, as a result, it is reasonable to consider that both reversible and irreversible reactions exist in a TFT. In this paper the case when both reactions exist in parallel and make a combined threshold voltage shift is modeled and simulated. The results show that a combined threshold voltage shift observed from a TFT may agrees with the analytic models and, thus, the analytic models don't guarantee whether the cause of the shift is defection-creation or charge-trapping.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1992.04a
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• pp.79-83
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• 1992

According to the variation of hydrostatic pressure on the central axis of deformable material, the V-shaped central bursting defect may be created on extrusion or drawing processes. The process factors whichaffect the generation of defects are die semi-angle, reduction ratio of cross-sectional area, friction factor, material properties and so on. The combination of these factors can determine the prossibility of defect creation and the shape of various round holes which have been created inside already. By the rigid plastic finite element method, this paper describes the observations of change in shape of a round hole with process conditions suchas die semi-angle, reduction ratio of cross-sectional area and friction factorat the unsteady state of axi-symmetrical extrusion process when the round hole is alreadyexisted inside the original billet, and also, the effects of process factors are investigated to prevent the possible defects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.6
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• pp.849-852
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• 2021

This paper presents a vision based tire mold inspection system where mold defects are inspected and the sizes of specific parts of the mold are measured. There are a lot of challenging issues as letters and pictures of intaglio are engraved on a bright surface of the tire mold. To solve the issues, we carefully selected a line-scan camera and a line light. In addition, we used PLC to control the mechanical parts. The developed system provides inspection of misspelled and deformed letters as well as a variety of the functions such as size measurement of engraved regions and inspection report file creation.

• Journal of the Korea Society of Computer and Information
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• v.23 no.2
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• pp.9-16
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• 2018

Recently, as various IP set-top boxes based on Android OS have been widely used in general households and public facilities, complaints about services and set-top boxes have continued to increase as much as other smart devices. In order to reduce this problem, the manufacturer performs the testing work before the product is commercialized. However, the testing can reduce potential defects in the product, but it can not prove that the product is free of defects. Therefore, the quality of the product can vary depending on how effective testing techniques are introduced. In this paper, we propose a new exploratory testing method that minimizes test case creation time and makes it easier to plan and execute test while simultaneously learning how to run the product under test. Using the first proposed method, the test time is reduced by about 16.7 hours and the defect detection rate is 25.4% higher than the formal specification-based testing method. Informally, the test time was shortened by about 4.7 hours and the defect detection rate was 13% higher than the informal experience-based testing method.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1673-1676
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• 2007

We have investigated the degradation mechanism of hydrogenated amorphous silicon (a- Si:H) thin film transistors (TFTs) The threshold voltage of driving a-Si:H TFT is shifted severely by electrical bias due to a charge trapping and defect state creation. And the short channel TFTs exhibit less threshold voltage degradation than long channel TFTs. We propose the pixel circuits employing negative bias annealing scheme in order to suppression of threshold voltage shift of a-Si:H TFT.

• Management & Information Systems Review
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• v.22
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• pp.211-229
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• 2007

The ISO/TS16949 APQP goal of defect prevention and decrease of spread waste, is the customer satisfaction which leads a continuous improvement and profit creation. The quality expense where the most is caused by but with increase of production initial quality problem occurrence is increasing to is actuality. Like this confirmation amendment. with the problem which is forecast in the place development at the initial stage which it does completeness it does not confront not to be able, production phase to be imminent, the problem accumulates and it talks the development shedding of which occurs. In opposition, prediction confrontation. is forecast in development early stage to and it is a structure which does not occur a problem to production early stage. Like this development is a possibility of accomplishing competitive company from production phase. Which attains an goal of, chance cause it leads a APQP activity (common cause) with special cause prevention & detection the connection characteristic of the focus technique against a interaction is important. And the customer requirement satisfaction and must convert a APQP goal of attainment at the key characteristics action step. (1) The Prevention - with Design FMEA application prevention of the present design management/detection, (2) the Detection (prevention/detection) - with Process FMEA application prevention of the present process control/detection, (3) Special Cause - statistical process control (SPC) 4M cause spread removal, (4) Common Cause - statistical process control (SPC) the nothing zero defect which leads the continuous improvement back of spread with application it will be able to attain with application.