• Korean Journal of Materials Research
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• v.11 no.9
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• pp.781-785
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• 2001

The thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystal was investigated by applying high temperature annealing ($\geq$$1100^{\circ}C$) and non-agitated Secco etching. For evaluation of the effect of LP upon device performance/yield, commercial DRAM and ASIC devices were fabricated. The results indicated that high temperature annealing generates LPs whereas it decreases FPD density drastically. However, the origins of FPD and LP seemed to be quite different by not showing any correspondence to their density and the location of LP generation and FPD extinction. By not showing any difference between the performance/yield of devices whose design rule is larger than 0.35 $\mu\textrm{m}$, LP seemed not to have detrimental effects on the performance/yield.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.312-316
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• 2016

The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

• Nuclear Engineering and Technology
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• v.34 no.3
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• pp.202-210
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• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• Journal of Korea Multimedia Society
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• v.3 no.2
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• pp.112-120
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• 2000

In this paper, we implement a real-time textile dimension inspection system. It can detect various types of real defects which determine the quality of fabric product, defect positions of textile, classify the distortion angel of moving textile and the density. In the implemented system, we measure the density of textile using zone-crossing method with optical lens to solve the noise and real-time problems. And we compensate distortion angel of textile with the classification of distortion types using gaussian gradient and mean gradient features. And also, it detecs real defects of textile and its positions using gray level co-occurrence matrix features. The implemented texile demension inspection systemcan inspect textile dimensions such as density, distortion angle, defect of textile and defect position at real-time. In the implemented proposed texitile dimension inspection system, It is possible to calculate density and detect default of textile at real-time dimension inspection system, it is possible to calculate density and detect default of textile at textile states throughout at all the significant working process such as dyeing, manufacturing, and other texitle processing.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.75-85
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• 2017

Thermoelectric is a key technology for energy harvesting and solid-state cooling by direct thermal-to-electric energy conversion (or vice versa); however, the relatively low efficiency has limited thermoelectric systems to niche applications such as space power generation and small-scale or high-density cooling. To expand into larger scale power generation and cooling applications such as ATEG (automotive thermoelectric generators) and HVAC (heating, ventilation, and air conditioning), high-performance bulk thermoelectric materials and their low-cost processing are essential prerequisites. Recently, the performance of commercial thermoelectric materials including $Bi_2Te_3$-, PbTe-, skutterudite-, and half-Heusler-based compounds has been significantly improved through non-equilibrium processing technologies for defect engineering. This review summarizes material design approaches for the formation of multi-dimensional and multi-scale defect structures that can be used to manipulate both the electronic and thermal transport properties, and our recent progress in the synthesis of conventional thermoelectric materials with defect structures is described.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.15-15
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• 2018

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• Journal of Magnetics
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• v.21 no.3
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• pp.437-441
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• 2016

Dipole model based analytical expression is proposed to estimate the length and depth of the rectangular defect on ferromagnetic pipe. Among the three leakage profiles of Magnetic Flux Leakage (MFL), radial and axial leakage profiles are considered in this work. Permeability variation of the specimen is ignored by considering the flux density as close to saturation level of the inspected specimen. Comparing the profile of both the components, radial leakage profile furnishes the better estimation of defect parameter. This is evident from the results of error percentage of length and depth of the defect. Normalized pattern of the proposed analytical model radial leakage profile is good agreement with the experimentally obtained profile support the performance of proposed expression.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.17-20
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• 1998

Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.2783-2791
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• 2022

Molecular dynamics simulations were performed to predict the behavior of graphite atoms under neutron irradiation using large-scale atomic/molecular massively parallel simulator (LAMMPS) package with adaptive intermolecular reactive empirical bond order (AIREBOM) potential. Defect structures of graphite were compared with results from previous studies by means of density functional theory (DFT) calculations. The quantitative relation between primary knock-on atom (PKA) energy and irradiation damage on graphite was calculated. and the effect of PKA direction on the amount of defects is estimated by counting displaced atoms. Defects are classified into four groups: structural defects, energy defects, vacancies, and near-defect structures, where a structural defect is further subdivided into six types by decision tree method which is one of the supervised machine learning techniques.