Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1998.11a
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- Pages.17-20
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- 1998
Thermal behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Their Effects on Device Yield.
Czochralski 법으로 제조된 실리콘 단결정 내의 Flow Pattern Defect와 Large Pit의 열적 거동 및 소자 수율에의 영향
Abstract
Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature (