• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.998-1003
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• 1998

$BaTiO_3$ thin film was electrochemically deposited on Ti electrode in a 0.4 M $Ba(OH)_2$ solution of $85^{\circ}C$ using a current pulse waveform. Both $BaTiO_3$ crystallinity and faradaic efficiency for the film formation were enhanced with the increase of cathodic current density and pulse time. Based on the surface analysis and electrochemical studies, it was suggested that, during cathodic pulsed, the surface pH increase due to the reduction of $H_2O$ accelerates the structural changes of Ti oxides which were formed during anodic cycle. Prior to experiments, Ti oxides were intentionally grown in 0.1 M $H_2SO_4$ solution and the effect of initial oxide film thickness on the $BaTiO_3$ film formation was investigated. The migration of $Ti^{+4}$ ions through the oxide film was retarded with the increase of film thickness and it was observed that the crystallization of $BaTiO_3$ was only limited to the defect area of surface oxides.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.12
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• pp.6047-6052
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• 2013

A cosmetic manufacturing process requires a mold that is inevitable for mass production. Cosmetic containers are one of major factors affecting the customer's purchase decision. In addition, the manufacturing cost in cosmetic container comprises a large portion of the entire product cost. Therefore, a mold satisfying the economical feasibility, aesthetics and functionality is necessary. Among the cosmetic containers, square shape containers have a tendency of having a short shot defect product. The square shaped cosmetic containers are mostly produced as a side gate shape on the two-plate molds. On the other hand, there are two disadvantages, such as gate trace and post processing requirement. The overlap-gateproposed in this study has the characteristics of intaglio gate cutting and no need for post processing. The delivery system of the overlap gate was simulated and compared with the side gate via Moldflow. The improvement in flow, frozen rate, density, and Air trap was confirmed. Based on the simulation results, the mold and performed injection molding was fabricated. In this study, the possibility of the mass production of high aesthetic and functionality cosmetic containers was verified.

• Journal of Korea Multimedia Society
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• v.15 no.11
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• pp.1369-1376
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• 2012

In this paper, we propose 2D industrial image registration method for the detection of defects. Proposed method performs preprocessing to smooth the original image with the preservation of the edge for the robust registration against general noise. Then, x-direction gradient magnitude image and corresponding binary image are generated. Density analysis around neighborhood regions per pixel are performed to generate feature image for preventing mis-registration due to moire-like patterns, which frequently happen in industrial images. Finally, 2D image registration based on phase correlation between feature images is performed to calculate translational parameters to align two images rapidly and optimally. Experimental results showed that the registration accuracy of proposed method for the real industrial images was 100% and our method was about twenty times faster than the previous method. Our fast and accurate method could be used for the real industrial applications.

• Journal of Korea Multimedia Society
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• v.16 no.12
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• pp.1376-1384
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• 2013

In this paper, we propose an automaticdetection method of foreign bodies through template matching in industrial CT volume data. Our method is composed of three main steps. First,Indown-sampling data, the product region is separated from background after noise reduction and initial foreign-body candidates are extracted using mean and standard deviation of the product region. Then foreign-body candidates are extracted using K-means clustering. Second, the foreign body with different intensity of product region is detected using template matching. At this time, the template matching is performed by evaluating SSD orjoint entropy according to the size of detected foreign-body candidates. Third, to improve thedetection rate of foreign body in original volume data, final foreign bodiesare detected using percolation method. For the performance evaluation of our method, industrial CT volume data and simulation data are used. Then visual inspection and accuracy assessment are performed and processing time is measured. For accuracy assessment, density-based detection method is used as comparative method and Dice's coefficient is measured.

• Journal of Soil and Groundwater Environment
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• v.6 no.1
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• pp.53-62
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• 2001

Effects of surface defect on thermal stability and stress crack resistance of high density polyethylene geomembranes in environmental conditions were examined by comparing the mechanical properties, chemical resistance and failure times of geomembranes between defective cases under different temperatures. Artificial surface defects were added to the surface of geomembranes by scratch apparatus designed specially. The number of surface defects was increased with the smaller size of scratch induced particles, and the more scratch addition numbers at the shear rate of scratch induced mechanism, 100mm/min. The tensile strength were decreased but the tensile strain was increased with the above conditions. In chemical resistance of defective geomembranes, the tensile strength were decreased but the tensile strain was increased with the longer immersion period and the higher temperature under the same scratch induced conditions. Finally, failure times of defective geomembranes by ESCR test were shifted to the shorter time ranges by increasing temperatures.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.26 no.3
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• pp.270-278
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• 2000

This study was conducted to compare the vein graft with the nerve graft, and evaluated the availability of the vein graft on the reconstruction of the inferior alveolar nerve defect. The experimental animals were 12 rabbits weighing $1.5{\sim}2.0kg$, divided into 3 groups : sham operation group, vein conduit group and nerve graft group. All nerves were excised and histomorphometric analysis was performed at 2, 4, 6, 12, 16 weeks after operation. The obtained results were as follows. 1. Histologic examination revealed the regenerated nerve fibers within the lumen of the vein graft and nerve graft at 6 weeks after repair. 2. Axon diameter was significantly larger in nerve graft group(p<0.05) than in vein graft group at 6weeks, and larger in nerve graft group than in vein graft group at 16weeks. 3. Axon density was higher in the vein graft group at 16 weeks. 4. The myelin of the regenerated nerve fibers in distal segment of the vein graft group was thick, approaching the proximal segment at 16weeks. This means remyelination in distal segment in the vein graft group. These results suggested that autogenous vein graft may be used as an alternative to autogenous nerve graft.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.33-40
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• 1992

Several etching phenomena were observed and analyzed in diaphragm process performed on 4-inch (100) Si wafers for sensor application. In case of deep etching to above 300$\mu$m depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. It was known that the hillock had a pyramidal shape or trapizoidal hexahedron structure depending on the density and size of the reaction products. The IR spectra showed that the white residue, which was due to the local over-saturation of Si dissolved in solution, was mostly Si-N-O compounds mixed with a small amount of H and C etc. Also, the difference in both the existence of etch-defects and etch rate distribution over a whole wafer was investigated when the etched surfaces were downward, upward horizontally and erective in etching solutions. The obtained data were analyzed through flow pattern in the etching bath. As the results, the downward and erective postures were favorable in the etch rate uniformity and the etch-defect removal, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.163-171
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• 1997

CdS thin films for window material of solar cell were prepared by close spaced vapor transport deposition system and annealed at different temperatures. The structural, electrical, and optical properties of as-deposited and annealed CdS films were investigated as functions of substrate and annealing temperatures. The CdS thin films were grown perpendicularly to the substrate along the (002)plane with hexagonal structure regardless of the preparation conditions The resistivity of the CdS film deposited was increased gradually from $60{\Omega}cm$ for $25^{\circ}C$ to $2{\times}10^{4}{\Omega}cm$ for $300^{\circ}C$. The optical transmittance at the substrate temperature of $25^{\circ}C$ was about 80% in the the visible spectrum. The resistivity increased monotonically, and the optical transmittance was decreased substantially with annealing temperature due to the increased defect density in the CdS film.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.