• Journal of Periodontal and Implant Science
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• v.45 no.6
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• pp.229-237
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• 2015

Purpose: The aim of this study was to determine the clinical feasibility of using dehydrothermally cross-linked collagen membrane (DCM) for bone regeneration around peri-implant dehiscence defects, and compare it with non-cross-linked native collagen membrane (NCM). Methods: Dehiscence defects were investigated in twenty-eight patients. Defect width and height were measured by periodontal probe immediately following implant placement (baseline) and 16 weeks afterward. Membrane manipulation and maintenance were clinically assessed by means of the visual analogue scale score at baseline. Changes in horizontal thickness at 1 mm, 2 mm, and 3 mm below the top of the implant platform and the average bone density were assessed by cone-beam computed tomography at 16 weeks. Degradation of membrane was histologically observed in the soft tissue around the implant prior to re-entry surgery. Results: Five defect sites (two sites in the NCM group and three sites in the DCM group) showed soft-tissue dehiscence defects and membrane exposure during the early healing period, but there were no symptoms or signs of severe complications during the experimental postoperative period. Significant clinical and radiological improvements were found in all parameters with both types of collagen membrane. Partially resorbed membrane leaflets were only observed histologically in the DCM group. Conclusions: These findings suggest that, compared with NCM, DCM has a similar clinical expediency and possesses more stable maintenance properties. Therefore, it could be used effectively in guided bone regeneration around dehiscence-type defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• International Journal of Industrial Entomology and Biomaterials
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• v.34 no.2
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• pp.32-37
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• 2017

The purpose of this study was (1) to demonstrate the anti-microbial properties of 4-hexylresorcinol (4HR) loaded silk mat and (2) comparison of bone formation between 4HR incorporated silk mat and collagen membrane. Anti-microbial properties of 4HR incorporated silk mat was done after sterilization of silk mat (autoclaving and ethylene oxide gas). For the evaluation of bone formation, bilateral bony defects (size: 8 mm) were prepared in the parietal bone of the rabbits (n=10). 4HR incorporated silk mat (size: $10{\times}10mm$) was applied on the right defect. For the comparative purpose, the same size of commercial collagen membrane was applied on the left defect. The anti-microbial properties of 4HR incorporated silk mat were maintained after sterilization process. When compared bone mineral density and bone volume, there was no statistically significant difference between groups at 4 weeks and 8 weeks after operation (p>0.05). In conclusion, 4HR incorporated silk mat could be autoclaved without concern of anti-microbial properties loss. In addition, 4HR incorporated silk mat showed similar bone regeneration to collagen membrane. Therefore, 4HR incorporated silk mat might be considered for the application of open membrane technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.23-23
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• 2011

Chemical-Mechanical Planarization (CMP) 공정이란 화학적 반응 및 기계적인 힘이 복합적으로 작용하여 표면을 평탄화하는 공정이다. 이러한 CMP 공정은 반도체 산업에서 회로의 고집적화와 다층구조를 형성하기 위하여 도입되었으며 반도체 제조를 위한 필수공정으로 그 중요성이 강조되고 있다. 특히 최근에는 Inter-Level Dielectric (ILD)의 형성과 Shallow Trench Isolation (STI) 공정에서실리콘 산화막을 평탄화하기 위한 CMP 공정에 대해 연구가 활발히 이루어지고 있다. 그러나 CMP 공정 후 scratch, pitting corrosion, contamination 등의 Defect가 발생하는 문제점이 존재한다. 이 중에서도 scratch는 기계적, 열적 스트레스에 의해 생성된 패드의 잔해, 슬러리의 잔유물, 응집된 입자 등에 의해 표면에 형성된다. 반도체 공정에서는 다양한 종류의 실리콘 산화막이 사용되고 gks이러한 실리콘 산화막들은 종류에 따라 경도가 다르다. 따라서 실리콘 산화막의 경도에 따른 CMP 공정 및 이로 인한 Scratch 발생에 관한 연구가 필요하다고 할 수 있다. 본 연구에서는 scratch 형성의 거동을 알아보기 위하여 boronphoshposilicate glass (BPSG), plasma enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS), high density plasma (HDP) oxide의 3가지 실리콘 산화막의 기계적 성질 및 이에 따른 CMP 공정에 대한 평가를 실시하였다. CMP 공정 후 효율적인 scratch 평가를 위해 브러시를 이용하여 1차 세정을 실시하였으며 습식세정방법(SC-1, DHF)으로 마무리 하였다. Scratch 개수는 Particle counter (Surfscan6200, KLA Tencor, USA)로 측정하였고, 광학현미경을 이용하여 형태를 관찰하였다. Scratch 평가를 위한 CMP 공정은 실험에 사용된 3가지 종류의 실리콘 산화막들의 경도가 서로 다르기 때문에 동등한 실험조건 설정을 위해 동일한 연마량이 관찰되는 조건에서 실시하였다. 실험결과 scratch 종류는 그 형태에 따라 chatter/line/rolling type의 3가지로 분류되었다 BPSG가 다른 종류의 실리콘 산화막에 비해 많은 수에 scratch가 관찰되었으며 line type이 많은 비율을 차지한다는 것을 확인하였다. 또한 CMP 공정에서 압력이 증가함에 따라 chatter type scratch의 길이는 짧아지고 폭이 넓어지는 것을 확인하였다. 본 연구를 통해 실리콘 산화막의 경도에 따른 scratch 형성 원리를 파악하였다.

• Journal of Fashion Business
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• v.21 no.1
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• pp.58-73
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• 2017

The purpose of this study was to examine the need of the eyelash design area and the changes of an eye image according to eyelash design. Methodology included both a theoretical research and an empirical research. The theoretical research reviewed previous researches and technical books. The empirical research divided eye shapes, complemented the defect of eye shapes, and examined resulting image changes. A mechanical way was performed for treatment because it was more efficient than a manual way. A J-curl type was used. Eye length was divided into five and the point was determined. The length and density of curl were changed in each point to maximize a treatment effect. As a result, eye images were changed as follows. First, round eyes became stable. Slit eyes became vivid and soft. Wide-set eyes became intelligent and narrow-set eyes became smooth. Large eyes were naturally gradated and small eyes became larger. Double-eyelid eyes became stable and elegant and single-eyelid eyes became gentle and soft. Bulging eyes became easy and soft and sunken eyes became smooth. Peaked eyes became gentle and soft and sleepy eyes became strong and vivid. Based on the findings, eyelash design can play a role in changing an image according to eye shapes. In particular, a speed eyelash extension device to extend eyelash can reduce working hours and gradate only by angle control. It can complement the defect of eyes according to the design of each shape and change into a better image.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.41
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• pp.16.1-16.6
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• 2019

Background: Silk mats have been approved for clinical trials by the Korean Food and Drug Administration as membranes for guided tissue regeneration (GTR). In this study, silk mat application was compared to high-density polytetrafluoroethylene (dPTFE) membrane application or no membrane group. Methods: To compare the silk mat group to the dPTFE group or the no membrane group, a retrospective sample collection was conducted. Bony defects were measured at the time of extraction (T0) and then at 3 months (T1) and 6 months after extraction (T2) on a digital panoramic view. Bone gain (BG) was calculated by subtracting from the bony defect at T0 to the bony defect at each follow-up. Results: The BG at T2 was 2.44 ± 2.49 mm, 4.18 ± 1.80 mm, and 4.24 ± 2.05 mm in the no membrane group, silk mat group, and dPTFE group, respectively. Both membrane groups had significantly higher BG than BG in the no membrane group at T2 (P < 0.05). Conclusions: Both membrane groups showed higher BG than the no membrane group.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.