• 제목/요약/키워드: Defect Density

검색결과 460건 처리시간 0.029초

쵸크랄스키 Silicon 단결정의 Large Pit과 Flow Pattern defect의 열적 거동과 Large Pit의 소자 수율에의 영향 (Thermal Behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Effects of Large Pit upon Device Yield)

  • 송영민;문영희;김종오;조기현
    • 한국재료학회지
    • /
    • 제11권9호
    • /
    • pp.781-785
    • /
    • 2001
  • The thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystal was investigated by applying high temperature annealing ($\geq$$1100^{\circ}C$) and non-agitated Secco etching. For evaluation of the effect of LP upon device performance/yield, commercial DRAM and ASIC devices were fabricated. The results indicated that high temperature annealing generates LPs whereas it decreases FPD density drastically. However, the origins of FPD and LP seemed to be quite different by not showing any correspondence to their density and the location of LP generation and FPD extinction. By not showing any difference between the performance/yield of devices whose design rule is larger than 0.35 $\mu\textrm{m}$, LP seemed not to have detrimental effects on the performance/yield.

  • PDF

The Effect of Domain Wall on Defect Energetics in Ferroelectric LiNbO3 from Density Functional Theory Calculations

  • Lee, Donghwa
    • 한국세라믹학회지
    • /
    • 제53권3호
    • /
    • pp.312-316
    • /
    • 2016
  • The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

Electronic States of Uranium Dioxide

  • Younsuk Yun;Park, Kwangheon;Hunhwa Lim;Song, Kun-Woo
    • Nuclear Engineering and Technology
    • /
    • 제34권3호
    • /
    • pp.202-210
    • /
    • 2002
  • The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

영역교차법, 왜곡각 분류자 및 명암도 상관행렬 특징자를 이용한 실시간 섬유 성량 검사 시스템 (Real-Time Textile Dimension Inspection System Using Zone-Crossing Method, Distortion Angle Classifier and Gray-Level Co-occurrence Matrix Features)

  • 이응주;이철희
    • 한국멀티미디어학회논문지
    • /
    • 제3권2호
    • /
    • pp.112-120
    • /
    • 2000
  • 본 논문에서는 섬유 제직 공정시 섬유 제품의 질에 영향을 미칠수 있는 섬유 결함, 결함의 위치 검출 뿐만 아니라 이동중인 섬유의 왜곡각 분류 및 섬유의 밀도를 측정할 수 있는 실시간 섬유 성량 검사 시스템을 구현하였다. 구현된 시스템에서는 잡음 문제와 실시간 처리를 위하여 광학적 렌즈로부터 섬유의 위사 부분만을 추출한 후 영역 교차법을 적용하여 섬유의 밀도를 측정하였으며, 획득된 위사 영상으로부터 평균 기울기와 가우시안 기울기 분류자를 사용하여 고속 이동 섬유 가공 공정시 발생할 수 있는 섬유의 왜곡각 분류를 통해 왜곡각 보정을 하였다. 또한 명암도 상관 행렬 특징자를 이용하여 섬유의 결함 검사와 겸함 위치를 추출하도록 하였다. 제안한 알고리즘을 적용하여 구현한 섬유 성량 검사 시스템은 고속 이동 섬유 가공 공정에 있어서 실시간으로 섬유의 밀도 계산과 섬유 결함 검출이 가능하며 섬유 염색, 제직 및 가공공정에 있어서 섬유의 상태를 모니터링 및 제어함으로써 고품질의 섬유 제품 생산이 가능하다.

  • PDF

Design and Preparation of High-Performance Bulk Thermoelectric Materials with Defect Structures

  • Lee, Kyu Hyoung;Kim, Sung Wng
    • 한국세라믹학회지
    • /
    • 제54권2호
    • /
    • pp.75-85
    • /
    • 2017
  • Thermoelectric is a key technology for energy harvesting and solid-state cooling by direct thermal-to-electric energy conversion (or vice versa); however, the relatively low efficiency has limited thermoelectric systems to niche applications such as space power generation and small-scale or high-density cooling. To expand into larger scale power generation and cooling applications such as ATEG (automotive thermoelectric generators) and HVAC (heating, ventilation, and air conditioning), high-performance bulk thermoelectric materials and their low-cost processing are essential prerequisites. Recently, the performance of commercial thermoelectric materials including $Bi_2Te_3$-, PbTe-, skutterudite-, and half-Heusler-based compounds has been significantly improved through non-equilibrium processing technologies for defect engineering. This review summarizes material design approaches for the formation of multi-dimensional and multi-scale defect structures that can be used to manipulate both the electronic and thermal transport properties, and our recent progress in the synthesis of conventional thermoelectric materials with defect structures is described.

프라임, 테스트 등급 실리콘 웨이퍼의 표면 결함 특성 (Surface Defect Properties of Prime, Test-Grade Silicon Wafers)

  • 오승환;임현민;이동희;서동혁;김원진;김륜나;김우병
    • 한국재료학회지
    • /
    • 제32권9호
    • /
    • pp.396-402
    • /
    • 2022
  • In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm2 and Test was 5.61 × 10 A/cm2, which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 1012 cm-2 in slow state density and 0.41 × 1013 cm-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 1011 cm-2 in slow state density and 1.33 × 1012 cm-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

Dipole Model to Predict the Rectangular Defect on Ferromagnetic Pipe

  • Suresh, V.;Abudhair, A.
    • Journal of Magnetics
    • /
    • 제21권3호
    • /
    • pp.437-441
    • /
    • 2016
  • Dipole model based analytical expression is proposed to estimate the length and depth of the rectangular defect on ferromagnetic pipe. Among the three leakage profiles of Magnetic Flux Leakage (MFL), radial and axial leakage profiles are considered in this work. Permeability variation of the specimen is ignored by considering the flux density as close to saturation level of the inspected specimen. Comparing the profile of both the components, radial leakage profile furnishes the better estimation of defect parameter. This is evident from the results of error percentage of length and depth of the defect. Normalized pattern of the proposed analytical model radial leakage profile is good agreement with the experimentally obtained profile support the performance of proposed expression.

Czochralski 법으로 제조된 실리콘 단결정 내의 Flow Pattern Defect와 Large Pit의 열적 거동 및 소자 수율에의 영향 (Thermal behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Their Effects on Device Yield.)

  • 송영민;조기현;김종오
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
    • /
    • pp.17-20
    • /
    • 1998
  • Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

  • PDF

Defect structure classification of neutron-irradiated graphite using supervised machine learning

  • Kim, Jiho;Kim, Geon;Heo, Gyunyoung;Chang, Kunok
    • Nuclear Engineering and Technology
    • /
    • 제54권8호
    • /
    • pp.2783-2791
    • /
    • 2022
  • Molecular dynamics simulations were performed to predict the behavior of graphite atoms under neutron irradiation using large-scale atomic/molecular massively parallel simulator (LAMMPS) package with adaptive intermolecular reactive empirical bond order (AIREBOM) potential. Defect structures of graphite were compared with results from previous studies by means of density functional theory (DFT) calculations. The quantitative relation between primary knock-on atom (PKA) energy and irradiation damage on graphite was calculated. and the effect of PKA direction on the amount of defects is estimated by counting displaced atoms. Defects are classified into four groups: structural defects, energy defects, vacancies, and near-defect structures, where a structural defect is further subdivided into six types by decision tree method which is one of the supervised machine learning techniques.