• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.813-815
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• 1992

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.

• Proceedings of the KAIS Fall Conference
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• 2012.05a
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• pp.327-331
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• 2012

양전자 소멸 분광법을 이용하여 X선으로 디지털 의료 영상을 회득하는 형광체를 X선 조사에 의한 형광체의 원자 크기 정도 결함의 특성을 조사하였다. 양전자와 전자의 쌍소멸에서 발생하는 511 KeV 감마선 스펙트럼의 수리적 해석 방법인 S-변수를 사용하여 결함의 정도를 측정하였다. 임상에서 X-선을 이용한 디지털 의료영상을 획득할 때 형광체로 사용하고 있는 시료를 사용기간별로 0, 2, 4, 6 구분하여 시료를 실험하였다. 각 시료들에서 측정된 S-변수는 0.4932부터 0.4956 정도의 변화를 보였다. 이에 상응하는 실험 방법으로 같은 시료에 X-선의 에너지와 조사시간 즉 6 MV 및 15 MV의 X-선을 사용하여 3, 6, 9, 그리고 12 Gy의 조사량을 변화시키면서 결함의 정도를 측정 비교하였다. 이 결과 형광체가 시용기간이 길어서 X선에 노출된 횟수가 많을수록 결함의 정도는 증가하는 경향을 보였고 X선의 에너지 강도가 강할수록 결함의 정도가 증가하는 경향을 보였다. 이것은 방사선에 노출된 빈도가 많을수록 영상을 획득하는데 보다 많은 선량이 요구되는 점과 영상의 화질이 저하는 현상을 결함특성 측정을 통하여 규명 하였다.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.54-57
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.10a
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• pp.190-194
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• 2003

Two different types of nondestructive evaluation (NDE) techniques were employed to investigate the tensile behavior of ceramic matrix composites (CMCs). Two NDE methods, ultrasonic testing (UT) and infrared (IR) thermography, were used to assess defects and/or damage evolution before and during mechanical testing. Prior to tensile testing, a UTC-scan and a xenon flash method were performed to obtain initial defect information in light of UT C-scans and thermal diffusivity maps, respectively. An IR camera was used for in-situ monitoring of progressive damages. The IR camera measured temperature changes during tensile testing. This paper has presented the feasibility of using NDE techniques to interpret structural performance of CMCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.42-45
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• 2018

Photovoltaic and optoelectronic devices based on hybrid metal halide perovskites ($MAPbX_3$; $MA=CH_3NH_3{^+}$, $X=Cl^-$, $Br^-$, or $I^-$) are rapidly improving in power conversion efficiency. Also, during recent years, perovskite single crystals have emerged as promising materials for high-efficiency photovoltaic and optoelectronic devices because of their low defect density. Here we show that the light soaking effect of mixed halide perovskite ($MAPbBr_{3-x}I_x$) single crystals can be explained using photoluminescence, time-resolved photoluminescence, and Raman scattering measurements. Unlike Br-based single crystal, Br/I mixed single crystal show a strong light soaking effect under laser irradiation condition that was related to the existence of multiple phases.

• Journal of Powder Materials
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• v.14 no.6
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• pp.399-404
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• 2007

The Cu-based bulk metallic glass (BMG) composite was fabricated by spark plasma sintering (SPS) using of gas-atomized metallic glass powders and ductile brass powders. No defect such as pores and cavities was observed at the interface between the brass powder and the metallic glass matrix, suggesting that the SPS process caused a severe viscous flow of the metallic glass and brass phases in the supercooled liquid region, resulting in a full densification. The BMG composites shows some macroscopic plasticity after yielding, although the levels of strength decreased.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.214-216
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1430-1432
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.155-158
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• 1997

Highly oriented diamond films were deposited on a (100) silicon substrate by bias enhanced nucleation technique. Both plan-view and cross-section TEM were applied to study the nucleation and growth mechanism of diamond grains. Randomly oriented polycrystalline diamond grains with internal microtwins were observed at the nucleation stage while defect free regions were retained at the growth stage and were apparently related with the epitaxy of diamond films. From our experimental results, the nucleation and texture formation mechanism of diamond films is discussed.