• 한국광물학회지
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• 제28권4호
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• pp.293-297
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• 2015

집속이온빔(FIB, focused ion beam)법은 광물 및 지질시료의 분석 대상 위치로부터 투과전자현미경(TEM, transmission electron microscope) 관찰을 위한 박편을 정밀하게 제작할 수 있는 방법으로 널리 보급되고 있다. 그러나 박편 제작과정에서 Ga 이온빔에 의한 구조 손상이나 인위적 효과들이 발생하여 전자빔에 의한 손상과 함께 TEM 분석에서의 난점들 중 하나이다. 광물 시료 FIB 박편의 TEM 관찰에서 석영과 장석의 비정질화, 커튼 효과, Ga 오염 등이 확인되었으며, 특히 입자 경계 부근이나 두께가 얇은 곳에서 이들 현상이 보다 뚜렷하다. 박편 제작 시의 가속전압 및 전류 조정 등의 분석절차 개선으로 이온빔 손상을 줄일 수 있으나, 어느 정도의 손상이나 오염은 피할 수 없으므로 TEM 박편 관찰과 해석에서 유의하여야 한다.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.43-50
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• 2007

ITO(Indium Tin Oxide) 전극 형성방법은 ITO 박막 자체의 전기 광학적 특성 뿐 아니라 ITO를 전극으로 하는 청색 발광 다이오드(파장 469nm)의 전기 광학적 특성 및 신뢰성에도 큰 영향을 미침을 확인하였다. 세 가지 ITO 전극 형성 방법 즉 electron beam evaporation법과 sputtering법, 그리고 electron beam evaporation법으로 먼저 증착한 뒤에 sputtering법으로 증착한 hybrid법 등을 사용하여 청색 발광 다이오드를 제작한 다음에 ITO 박막의 특성과 aging에 따른 발광 다이오드의 전기 광학적 특성 변화를 고찰하였다. 그 결과, ITO 전극을 sputtering 또는 electron beam evaporation 방법으로 형성한 발광 다이오드는 각각 sputtering damage의 문제와 전기저항이 증가하는 문제점을 안고 있음을 발견하였다. 그리고 이 문제점들을 hybrid 방법으로 해결하였다.

• Applied Microscopy
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• 제48권2호
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• pp.49-53
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• 2018

A successful transmission electron microscope (TEM) analysis is closely related to the preparation of the TEM specimen and should be followed by the suitable TEM specimen preparation depending on the purpose of analysis and the subject materials. In the case of the Si-based anode material, lithium atoms of formed Li silicide were removed due to ion beam and electron beam during TEM specimen preparation and TEM observation. To overcome the problem, we proposed a new technique to make a TEM specimen without the ion beam damage. In this study, two types of test specimens from the Si-based anode material of Li-ion battery were prepared by respectively adopting the only focused ion beam (FIB) method and the new FIB-ultramicrotome method. TEM analyses of two samples were conducted to compare the Ga ion damage of the test specimen.

• Applied Microscopy
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• 제48권4호
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.18-21
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• 2000

A nonconstact technique for reducing the core loss of a grain oriented silicon steel has been developed by the use of mechanical scribing Q-switched laser plasma jet or electron beam irradiation. Among these methods electron beam irradiation has advantages of domain refining without any deformation or damage of insulating film on the surface of a grain criented Si-Fe. Over the past years this processing was performed in vaccum of 10-4 Torr or below causing the problem of high cost and difficulty of continuous works. In this paper a miniature electron permeable window through which electron beam energy 4-80keV and average current 0.1-2mA. were obtained for electron beam irradiating on air was designed and manufactured.

• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.63-68
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• 2017

Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

• Journal of Radiation Protection and Research
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• 제36권4호
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• pp.190-194
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• 2011

After the first report that electrons with sub-ionization energy of DNA could cause single strand breaks or double strand breaks to DNA, there have been various studies to investigate the mechanisms of DNA damage by low-energy electrons. In this paper, we examined the possibility of using X-ray photoelectron spectroscopy (XPS) to analyze the dissociation patterns of the molecular bonds by electron irradiation on DNA thin films and tried to establish the method as a general tool for studying the radiation damage of biomolecules by low energ yelectrons. For the experiment, pBR322 plasmid DNA solution was formed into the films on tantalum plates by lyophilization and was irradiated by 5-eV electrons. Un-irradiated and irradiated DNA films were compared and analyzed using the XPS technique.

• 전자공학회논문지 IE
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• 제47권2호
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• pp.8-12
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• 2010

TEM(Transmission Electrion microsopy) 투과전자현미경은 재료의 기초 구조 분석과 반도체 또는 생물시편의 미세 구조분석에 널리 사용되는 장비이다. TEM 분석은 필수적으로 목적에 부합되는 적절한 시편제작이 수반되어야 한다. 다양한 전자 현미경 시편 제작 방법 중 본 논문에서는 FIB(Focus Ion Beam)를 이용한 시편 제작법 중 시편에 입사되는 에너지와 이온 Gun과 시편과의 상호 각도, 이온 밀링 깊이 조절 등의 실험을 통하여 표면 손상 최소화를 벌크 웨이퍼와 패턴화된 시편에서 실험하였다. 최소화된 표면 영향성(약 5nm)을 패턴화된 시편에 구현하였다.

• Applied Microscopy
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• 제45권4호
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• pp.199-202
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• 2015

A simple and novel transmission electron microscopy (TEM) sample preparation method for phase change nanowire is investigated. A $Ge_2Sb_2Te_5$ (GST) nanowire TEM sample was meticulously prepared using nanomanipulator and gas injection system in a field emission scanning electron microscopy for efficient and accurate TEM analysis. The process can minimize the damage during the TEM sample preparation of the nanowires, thus enabling the crystallographic analysis of as-grown GST nanowires without unexpected phase transition caused by e-beam heating.

• Applied Microscopy
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• 제36권spc1호
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• pp.1-7
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• 2006

The three-dimensional structure of an inorganic crystal, $SmZn_{0.67}Sb_2$ (space group $P4/nmm,\;a=4.30(3){\AA}\;and\;c= 10.27(1){\AA}$), was refined by electron crystallography utilizing high voltage electron microscopy (HVEM). Effects of instrumental resolution, image quality, beam damage and specimen tilting on the structure refinement have been evaluated. The instrumental resolution and image quality were the most important factors on the final results in the structure refinement, while the beam damage and specimen tilting effects could be experimentally minimized or controlled. The average phase errors $({\Phi}_{res})$ for the [001], [100] and [110] HVEM images of $SmZn_{0.67}Sb_2$ were $10.1^{\circ},\;9.6^{\circ}\;and\;6.8^{\circ}$, respectively. The atomic coordinates of $SmZn_{0.67}Sb_2$ were consistent within $0.0013{\AA}{\sim}0.0088{\AA}$, compared to the X-ray crystallography data for the same sample.