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Study on Surface Damage of Specimen for Transmission Electron Microscopy(TEM) Using Focused Ion Beam(FIB)  

Kim, Dong-Sik (Dept. of Computer Systems & Engineering, Inha Technical College)
Publication Information
전자공학회논문지 IE / v.47, no.2, 2010 , pp. 8-12 More about this Journal
Abstract
TEM is a powerful tool for semiconductor material analyses in structure or biological sample in micro structure. TEM observation need to make to coincide specimens for special purpose. in this paper, we have experimented for minimum surface damage on bulk wafer and patterned specimen by various conditions such as accelerating energy, depth of ion beam, ion milling types, and etc. in various specimen preparation methods by FIB (Focus Ion Beam). The optimal qualified specimens are contain low mounts of surface damage(about 5 nm) on patterned specimen.
Keywords
SEM; TEM; FIB; surface damage;
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  • Reference
1 J Scott, et al. "Sample Preparation for nanoanalitical electron microscopy using FIB lift-outand low energy ion milling." journal of phtsics : Conference Series 26, 2006.
2 S. Rubanov & P. R. Munroe "FIB-induced damage in silicon" J. Microscopy 214, 2004.
3 L.A. Giannuzzi "Reducing FIB Damage Using Low Energy Ions" Microscopy and Microanalysis, 2006.
4 Jon C. Lee, David Su, J. H. Chuang, "A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis", Microelectronics Reliability, Vol. 41, 2001.
5 Heinz D. Wanzenboeck, et al. " FIB-TEM characterization of locally Retricted Implantation Damage", Mat Res. Soc. Symp. Proc. Vol.738 2003.
6 Qiang Gao, et al. "Sidewall Damage reduced by FIB Milling During TEM Sample Preparation" 04CH37533 42nd Annual International Reliability Physics Symposium(2004)