A Study on Capacitance Enhancement by Hemispherical Grain Silicion and Phosphorous Concentration Properties (HSC-Si형성에 따른 캐패시턴스의 향상 및 인농도 특성에 관한 연구)
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- Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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- 2000.10a
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- pp.475-479
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- 2000