• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.77-83
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• 2022

A high-hardness tool material is required to reduce extreme abrasive wear when drilling carbon fiber reinforced plastic (CFRP). Single-crystal diamond is the hardest material in the world, but it is very expensive to be used as a cutting tool. Polycrystalline diamond (PCD) is a diamond grit fused at a high temperature and pressure, and diamond-like carbon (DLC) is an amorphous carbon with high hardness. This study compares DLC coatings and PCD inserts to conventional TiAlN-coated tungsten carbide drills. In fiberglass and carbon fiber reinforced polymer drilling, the tool wear of DLC-coated carbide was approximately half that of TiAlN-coated tools, and slight tool wear occurred in the case of PCD insert end drills.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.49-53
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• 2011

Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.149-155
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• 2011

We investigated tribological characteristics of diamond-like carbon (DLC) in a condition with carbon nanotube (CNT) content of 1wt% in aqueous solution. Si-DLC films were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process on Al6061 aluminum alloy. In this study, the deposition of DLC films was carried out in vacuum with a chamber pressure of 10-5 to 10-3 Torr achieved by mechanical pump followed by turbo molecular pump. The surface adsorbed oxygen on the Aluminum substrates was removed by passing Ar gas for 10 minutes. The RF power was maintained at 500W throughout the experiment. A buffer layer of HMDSO was deposited on the substrate to improve the adhesion of DLC coating. At this point CH4 gas was introduced in the chamber using gas flow controller and DLC coating was deposited on the buffer layer along with HMDSO for 50 min. The thickness of 1 ${\mu}m$ was obtained for DLC films on aluminum substrates The tribological properties of as synthesized DLC films were analyzed by wear test in the presence of dry air, water and lubricant such as CNT ink.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.214-218
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a diamond like carbon (DLC) thin film surface A good LC alignment by UV exposure on the DLC thin film surface at 200${\AA}$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the DLC thin film surface was observed at annealing temperature of 180$^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of 200$^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method o the DLC thin film surface can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.419-422
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• 2002

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a diamond like carbon (DLC) thin film. A high pretilt angle of about $3.5^{\circ}$ by ion beam(IB) exposure on the DLC thin film surface was measured. A good LC alignment by the IB alignment method on the DLC thin film surface was observed at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $220^{\circ}C$. Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the DLC thin film surface can be achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.27-32
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• 2004

The diamond-like carbon (DLC) films were deposited on the Si (100) wafer by a rf-PECVD method as a function of the mixture rate of methane-hydrogen gas and bias voltage. The bonding structure and mechanical properties of these deposited DLC films were investigated using FT-IR, Raman, and nano-indenter. The deposition rates of DLC films increased with increased flow rate of methane in the gas mixtures and increased bias voltage. The $sp^3/sp^2$ bonding ratio of carbon in thin film and the hardness increased with increasing flow rate of hydrogen in the gas mixtures and increasing bias voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.973-976
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• 2008

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. We examined the effects of the RF power on the electrical properties of the DLC films. The films were deposited at several RF powers ranging from 50 to 175 W in steps of 25 W. The leakage current of DLC films increased at higher deposition RF power. And the resistivities of DLC films grown at 50 W and 175 W were $5\times10^{11}$ ${\Omega}cm$ and $2.68\times10^{10}$ ${\Omega}cm$, respectively.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.461-466
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• 1999

Diamond-like carbon(DLC) films were directly deposited onto germanium(Ge) witness pieces and lenses by a capacitively coupled 13.56 MHz RF glow discharge plasma with $CH_4$ gas. The characterizations of DLC films were measured using a Raman and FTIR spectrometer. The configuration of Raman and FTIR spectra had a traditional shape. The IR transmittance was measured using an IR spectrophotometer. The maximum values of the IR transmission of Ge with the DLC/Ge/DLC, DLC/Ge/BBAR (broad band antireflection), DLC/Ge, and BBAR/Ge structures are 98%, 93%, 64%, and 63.5%, respectively, which come up to the theoretical values. The uniform DLC films were obtained by a rotation of the cathode at certain conditions.

• Journal of Industrial Technology
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• v.32 no.A
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• pp.119-123
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• 2012

Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.