• Title/Summary/Keyword: DEG

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Hall mobility in $Si_{1-x}Ge_{x}$/Si structure ($Si_{1-x}Ge_{x}$/Si 구조에서의 Hall 이동도)

  • 강대석;신창호;박재우;송성해
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.453-456
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    • 1998
  • The electrical properties of $Si_{1-x}Ge_{x}$ samples have been investigated. The sample structures were grown by MBE (molecular geam epitaxy) with Ge mole-fraction of x=0.0, x=0.05, x=0.1, and x=0.2. To examine the influence of the thermal processing, the $O_{2}$ and N$_{2}$ process were performed at 800[.deg. C] and 900[.deg. C], respectively. After this thermal process, hall measurements have been done over a wide range of the ambient temperature between 320[.deg. K] and 10[.deg. K] to find the temperature dependence using the comparessed-He gas system. The Ge-rich layer has been formed at the $SiO_{2}$/SiGe interface and it has an effect on the hall mobility. And it has been found that hall mobility was increased by the $N_{2}$ annealing process comparing with dry oxidation process at both 800[.deg.C] and900[.deg. C].

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GaAs solar cells for a satellite application (위성체의 동력원으로서의 GaAs 태양전지)

  • 이승기;한민구
    • 제어로봇시스템학회:학술대회논문집
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    • 1988.10a
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    • pp.620-626
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    • 1988
  • GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

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PCD 공구에 의한 Graphite/Epoxy 복합재료 가공시 발생하는 표면조도의 특성 연구

  • 왕덕현
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1992.10a
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    • pp.101-105
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    • 1992
  • Machined graphite/epoxy composite surfaces were studied by using SEM(Scanning Electron Microscopy). surface profilometry and its analysis to determine suitable surface describing parameters for machined unidirectional and laminate composite surface. The surface roughness and profile are found to be highly dependent on the fiber layup direction and the measurement direction. Machined unidirectional and 0.deg. 45 .deg. 90 .deg. plies in laminate composite surface profiles are found to be Gaussian in the direction of machining. Since there exist bare fibers without matrix smearing in 0 .deg. ply, higher surface roughness values were found in this orientation. It was possible to machine 90 .deg. and -45 .deg. plies due to the adjacent plies, which were holding those plies. It was found that the microgeometrical variations in terms of roughness parameters Ra without Dy (maximum Damage Depth) region and Dy are better descriptors of the machined laminate composite surface than commonly used roughness parameters Ra and Ra. The characteristics of surface profiles in laminate composite are well represented in CHD (Cumulative Height Distribution) plot and PPD (Percentage Probability Density) plot. Also, the power spectral density function is shown to be capable of identifying the wavelength distribution of the machining damage.

The effect of tempering temperature on the mechanical properties and fatigue crack propagation in STS 420 stainless steel (STS 420 스테인레스 강의 기계적 성질 및 피로균열전파에 미치는 템퍼링 온도의 영향)

  • 박용식;임병수
    • Journal of the korean Society of Automotive Engineers
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    • v.14 no.4
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    • pp.97-103
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    • 1992
  • An experimental investigation has been carried out to determine the effect of tempering temperature on the fatigue crack propagation behavior and mechanical properties using the quenched and tempered STS420 martensitic stainless steel. Heat treatments of tempering for two hours at the five different temperatures of 150.deg.C, 300.deg.C, 450.deg.C, 600.deg.C and 700.deg.C have been performed on the martensite obtained by air cooling the specimens austenitized for one hour at 1010.deg.C. Tensile strength, yield strength, hardness, .DELTA.K$_{th}$, C and m values of differently tempered specimens have been investigated by tensile, hardness and fatigue tests.s.

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Measurement of turbulent flow characteristics of a rectangular duct with a 180.deg. bend by hot wire anemometer (열선유속계에 의한 180.deg.곡관을 갖는 직사각 단면덕트에서의 난류유동 특성의 측정)

  • 박호영;유석재;최영돈
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.14 no.3
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    • pp.734-746
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    • 1990
  • Velocities and Reynolds stresses in 3-dimensional turbulent flow in rectangular ducts with a 180.deg. bend were measured by hot wire anemometer. Slant wire was rotated to 4 directions and I type wire was rotated to 2 directions and the voltage outputs of them were combined to obtain the mean velocities and Reynolds stresses. Flow characteristics in the 1.5:1 and 2:1 cross secioned 180.deg. bend were measured and the results were compared with the data from Moon for the square sectioned 180.deg. bend flow. Flows in rectangular sectioned 180.deg. bend show the reduction in secondary flow and therefore the reduction of double maximum in local mean velocities.

Electric properties of $ Ta_2$$O_5$ thin films by sol-gel method (졸-겔법에 의한$ Ta_2$$O_5$ 박막의 전기적 특성)

  • 유영각;이준웅
    • Electrical & Electronic Materials
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    • v.10 no.1
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    • pp.61-67
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    • 1997
  • We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.

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Properties of Y-Ba-Cu-O high Tc superconductor with fabricating processes (Y-Ba-Cu-O계 고온 초전도체의 제조공정에 따르는 물성)

  • 김종문;백수현
    • Electrical & Electronic Materials
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    • v.3 no.3
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    • pp.215-223
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    • 1990
  • Y-Ba-Cu-O계 고온 초전도체를 소결, 소결+HIP encapsulation방법으로 각각 제작하였다. 소결은 900.deg.C~960.deg.C에서 하였으며 소결시편의 일부는 HIP처리 하였는데 이때 HIP조건은 150MPa Ar압력에서 800.deg.C, 30min이었다. HIP시편의 상대밀도는 90%~93%의 밀도를 갖는 소결시편보다 5%~8% 증가하였다. 열처리 조건에 따른 x-ray 회절분석은 사방정-정방정 상변태를 보여주었다. 임계온도(Tc)는 91.deg.k 에서 전기비정항이 급격히 감소하기 시작하여 89.deg.k에서 완전히 0이 되었으며 전이폭은 3.deg.k내로 매우 좁았다. 임계전류밀도(Jc)는 소결시편의 경우 전형적인 ~159A/$cm^{2}$의 값을 보였으나 HIP처리 후 ~89A/$cm^{2}$로 감소했기 때문이라 생각하였다. 경도와 인성은 각각 38GPa과 2.9MPam$^{1}$2/로 증가하였다.

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Differentially expressed genes of Acanthamoeba castellanii during encystation

  • Moon, Eun-Kyung;Chung, Dong-Il;Hong, Yeon-Chul;Kong, Hyun-Hee
    • Parasites, Hosts and Diseases
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    • v.45 no.4
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    • pp.283-285
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    • 2007
  • To examine the expressed gene profile during encystation of Acanthamoeba castellanii Castellani, we used differentially expressed gene (DGE) screening by RT-PCR with 20 sets of random primers. From this analysis, we found that approximately 16 genes showed up regulation during encystation. We chose 6 genes, which had relatively higher expression levels, for further investigation. Based on homology search in database, DEG2 showed 55% of similarity with xylose isomerase, DEG9 showed 37% of similarity with Na P-type ATPase, and DEG14 showed 77% of similarity with subtilisin-like serine proteinase. DEG3 and DEG26 were identified as hypothetical proteins and DEG25 exhibited no significant similarity to any known protein. Encystation of Acanthamoeba has been suggested to be a process to resist adverse environmental or nutritional conditions. Further characterization studies of these genes may provide us with more information on the encystation mechanism of Acanthamoeba.

ON DELAY DIFFERENTIAL EQUATIONS WITH MEROMORPHIC SOLUTIONS OF HYPER-ORDER LESS THAN ONE

  • Risto Korhonen;Yan Liu
    • Bulletin of the Korean Mathematical Society
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    • v.61 no.1
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    • pp.229-246
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    • 2024
  • We consider the delay differential equations $$b(z)w(z+1)+c(z)w(z-1)+a(z)\frac{w'(z)}{w^k(z)}=\frac{P(z, w(z))}{Q(z, w(z))}$$, where k ∈ {1, 2}, a(z), b(z) ≢ 0, c(z) ≢ 0 are rational functions, and P(z, w(z)) and Q(z, w(z)) are polynomials in w(z) with rational coefficients satisfying certain natural conditions regarding their roots. It is shown that if this equation has a non-rational meromorphic solution w with hyper-order ρ2(w) < 1, then either degw(P) = degw(Q) + 1 ≤ 3 or max{degw(P), degw(Q)} ≤ 1. In addition, it is shown that in the case max{degw(P), degw(Q)} = 0 the equations above can have such a solution, with an additional zero density requirement, only if the coefficients of the equation satisfy certain strict conditions.

An Experimental Study on the Melting of a Horizontal Cylindrical Ice-Bar Submerged in Water (물속에 水平으로 잠겨 있는 圓 形 얼음 棒 의 融解現象 에 관한 實驗的 硏究)

  • 이동욱;유상신
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.9 no.4
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    • pp.414-420
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    • 1985
  • The melting phenomenal of the horizontal cylindrical ice-bar submerged in water are experimentally investigated for the temperature range from 2.5.deg. C to 15.deg. C. The shapes of the melting ice-bar are recorded by the Photo-elasticity Apparatus with modification of the test section. The shadowgraphs of the melting ice-bar show that water adjacent to the bar flows upward for the temperature range from 2.5.deg. C to 5.6.deg. C while above the temperature of 5.6.deg. C the flow is downward direction. The local and average Nusselt numbers become minimum at 5.6.deg. C which is considered as a critical temperature and the Nusselt numbers increase as temperature difference from the critical temperature increase.