• 한국재료학회지
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• 제11권6호
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• pp.477-482
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• 2001

쐐기형 전극 사이에 열처리전 비정질 ($Fe_{1-x}$ $Co_{x}$ )$_{89}$ $Zr_{ 11}$ (x=0~1.0) 자성막이 증착된 MSAW 소자를 구성하고 외부 인가자기장에 의한 MSAW 속도변화율을 조사하였다. 그 결과 MSAW 속도변화율은 직류 인가자기장, 구동주파수, 자성막의 두께 및 조성에 민감하게 의존하였으며, 특히 구동주파수 및 자성막의 두께가 증가할수록 증가함을 확인하였다. 열처리전 시편에서 나타난 최대 속도변화율은 x=0.8에서 얻어진 0.062%였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.627-634
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• 2000

In this paper, new micromachined tunble bandpass filters for multi-band millimeter-wave telecommunication systems are proposed. Two types of mm-wave tunable filters are fabricated using micromachning technology and the responses of the filters are measured. One is two-pole lumped elements filter and the other two-pole resonators filter. Frequency tunability of the filter is achieved by changing the gap between a common CPW ground plate and the movable cantilever beam connected to the transmission line with the controllable renge of 2.5${\mu}m$. The deflection of cantilever beam is measured with the applied DC voltage. With the applied bias voltage from 0 to 50 V, the fabricated filters show 0.6 GHz(2.3%) at 26.6 GHz, and 0.8 GHz(2.5%) at 32 GHz center frequency shift for the lumped elements and resonators filter, respectively. The life time of the fabricated gold cantilever structure are tested.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.23-27
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• 2003

Structural properties of Cu-Ni alloy films, such as preferred orientation, crystallite size, in-ter-planar spacing, cross-sectional morphology, and electrical resistivity, are investigated in terms of tar-get configurations that are used in the film deposition by means of magnetron co-sputtering. Two different target configurations are considered in this study: a dual-type configuration in which two separate tar-gets (Cu and Ni) and different bias types (RF and DC) are used and a Ni-on-Cu type configuration in which Ni chips are attached to a Cu target. The dual-type configuration appears to have some advantages over the Ni-on-Cu type regarding the accurate control of atomic composition of the deposited Cu-Ni alloy. However, the dual-type-produced film exhibits a porous and columnar structure, the relatively large internal stress, and the high electrical resistivity, which are mainly due to the relatively low mobility of adatoms. The affects of thermal treatment and deposition conditions on the structural and electrical properties of dual-type Cu-Ni films are also discussed.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• 한국세라믹학회지
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• 제39권9호
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• pp.813-817
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• 2002

Magnetoelectric(ME) laminate composites of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3 (PMN-PT)$ and Terfenol-D were prepared by sandwiching single crystals of PMN-PT between Terfenol-D disks. The magnetoelectric voltage coefficient (dE/dH) of the composite was determined to be 10.30 V/cm${\cdot}$Oe, at 1 kHz and under a dc magnetic bias of 0.4 T. The value of dE/dH is ∼80 times higher than either that of naturally occurring magnetoelectrics or artificially-grown magnetoelectric composites. This superior magnetoelectric voltage coefficient is attributed to the high piezoelectric voltage constant as well as the high elastic compliance of PMN-PT single crystal and the large magnetostrictive response of Terfenol-D.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3271-3273
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• 1999

In this paper, new micromachined tunable bandpass filters for multi-band millimeter-wave telecommunication systems are proposed. Two types of mm-wave tunable filters are fabricated using micromachining technology and the responses of the filters are measured. One is two-pole lumped elements filter and the other two-pole resonators filter. Frequency tunability of the filter is achieved by changing the gap between a common CPW ground plate and the movable cantilever beam connected to the transmission line with the controllable range of 2.5 ${\mu}m$. The deflection of cantilever beam is measured with the applied DC voltage. With the applied bias voltage from 0 to 50 V, the fabricated filters show 0.6 GHz(2.3 %) at 26.6 GHz, and 0.8 GHz(2.5%) at 32 GHz center frequency shift for the lumped elements and resonators filter, respectively.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.182-185
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• 2003

Etching characteristics of (PB,Sr)$TiO_3$(PST) thin films Were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture' lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 562 ${\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.