The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Variations of Interface Potential Barrier Height and Leakage Current of (Ba, Sr)$TiO_3$ Thin Films Deposited by Sputtering Process

  • Hwang, Cheol-Seong (SAMSUNG Electronics, Co., Semiconductor R&D Center, Memory Process) ;
  • Lee, Byoung-Taek (Lab. of Optical Materials and Coating (LOMC) Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST))
  • Published : 1996.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

Keywords

References

  1. Proc. Int. Electron Devices Meet. Giga-bit Scale DRAM Cell with New Simple Ru/(Ba, Sr)$TiO_3$/Ru Stacked Capacitors Using-X-ray Lithography Y. Nishioka;K. Shiozawa;T. Oishi;K. Kanamoto;Y. Tokuda;H. Sumitani;S. Aya;H. Yabe;K. Itoga;T. Hifumi;K. Marumoto;T. Kuroiwa;T. Kawahara;K. Nishikawa;T. Oomori;T. Fujino;S. Yamamoto;S. Uzawa;M. Kimata;M. Nunoshita;H. Abe
  2. Proc. Int. Electron Devices Meet. An ECR MOCVD (Ba, Sr)$TiO_3$ Based Stacked Capacitor Technology with $RuO_2/Ru/TiN/TiSi_x$ Storage Nodes for Gbit-scale DRAMs S. Yamamichi;P-Y. Lesaicherre;H. Yamaguchi;K. Takemura;S. Sone;H. Yabuta;K. Sata;T. Tamura;K. Nakajima;S. Ohnishi;K. Tokashiki;Y. Hayashi;Y. Kata;Y. Miyasaka;M. Yoshida;H. Ono
  3. Proc. Int. Electron Devices Meet. A Process Technology for 1 Giga-Bit DRAM K. P. Lee;Y. S. Park;D. H. Ko;C. S. Hwang;C. J. Kang;K. Y. Lee;J. S. Kim;J. K. Park;B. H. Roh;J. Y. Lee;B. C. Kim;J. H. Lee;K. N. Lim;J. W. Park;J. G. Lee
  4. Jpn. J. Appl. Phys. v.33 no.9B Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation K. Toriil;S. Saitoh;Y. Ohji
  5. Jpn. J. Appl. Phys. v.33 no.9B Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO₃ Thin Films Y. Fukuda;K. Aoki;K. Numata;A. Nishimura
  6. Jpn. J. Appl. Phys. v.33 no.9B Preparation of Pb (Zr, Ti)O₃ Thin Films on Ir and IrO₂ Electroders T. Nakamura;Y. Nakao;A. Kamisawa;H. Takasu
  7. Jpn. J. Appl. Phys. v.34 no.9B Surface Morphology and Electrical Properties of (Ba, Sr)TiO₃ Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition T. Kawahara;M. Yamamuka;A. Yuuki;K. One
  8. Jpn. J. Appl. Phys. v.35 no.4B Control of Etch Slope During Etching of Pt in $Ar/Cl_2/O_2$ Plasma W. J. Yoo;J. H. Hahm;H. W. Kim;C. O. Jung;Y. B. Kim;M. Y. Lee
  9. Jpn. J. Appl. Phys. v.34 no.10 Electronic Conduction Characteristics of Sol-Gel Ferroelctric $Pb(Zr_{0.4}Ti_{0.8}O_3$ Thin-Film Capacitors: Part Ⅰ T. Mihara;H. Watanabe
  10. Jpn. J. Appl. Phys. v.34 no.9B Deposition and Electrical Charaterization of Very Thin SrTiO₃ Films for Ultra Large Scale Intergrated Dynamic Random Access Memory Applications C. S. Hwang;S. O. Park;C. S. Kang;H-J. Cho;H-K. Kang;S. T. Ahn;M.Y. Lee
  11. Appl. Phys. Lett. v.67 no.19 Deposition of Extremely Thin (Ba, Sr)TiO₃ Thin Films for Ultra-latrge-scale Intergrated Dynamic Random Access Memory Applications C. S. Hwang;S. O. Park;H-J. Cho;C. S. Kang;H-K. Kang;S. I. Lee;M. Y. Lee
  12. Jpn. J. Appl. Phys. v.35 no.2B Fabrication and Electrical Characterization of Pt/(Ba, Sr)$SiO_3$/Pt Capacitors for Ultra-Large Scale Integrated Dynamic Random Access Memory Applications S. O. Park;C. S. Hwang;H-J. Cho;C. S. Kang;H-K. Kang;S. I. Lee;M. Y. Lee
  13. Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities The nature of electronic conduction in thin insulating layers P. Hesto;G. Barbottin(ed.);A. Vapaille(ed.)
  14. Proc. 18th IEEE ISAF Microstructure-induced Schottky Barrier Effects in Barium Strontium Titanate (BST) Thin Films for 16 and 64Mbit DRAM Cells J. F. Scott;M. Azuma;E. Fujii;T. Otsuki;G. Kano;M. C. Scott;C. A. Paz de Arauzo;L. D. Mcmillan;T. Roberts
  15. Ext. Abst. 3rd Pac-Rim Conf. on Ferro. Appl. Materials Properties and Mechanisms of Leakage Current and Breakdown in the Strontium Bismuth Tantalate Family J. F. Scott;A. J. Hartman;R. N. Lamb
  16. Electrical Transport in Solids K. C. Kao;W. Hwang