• Title/Summary/Keyword: DC-IR

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Random-Oriented (Bi,La)4Ti3O12 Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

  • Lee, Youn-Ki;Ryu, Sung-Lim;Kweon, Soon-Yong;Yeom, Seung-Jin;Kang, Hee-Bok
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.6
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    • pp.258-261
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    • 2011
  • A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

Preamplier design for IR receiver IC (적외선 수신모듈IC용 전치증폭기의 설계)

  • Hong, Young-Uk;Ryu, Seung-Tak;Choi, Bae-Gun;Kim, Sang-Kyung;Baik, Sung-Ho;Cho, Gyu-Hyeong
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.3124-3126
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    • 2000
  • The application of IR(Infrared) communication is very wide and IR receiver has become a standard of home entertainment. A preamplifier with single 5V supply was designed for IR receiver IC. To operate at long distance, receiver IC should have high gain and low noise characteristic. To provide constant output signal magnitude, independent of transciever distance, gain limiting stage is needed. And to cut-off DC noise component effectively, large resistance and capacitance are required. Transimpedance type preamplifier, and diode limiting amplifier, and current limiting amplifier were designed. It is another function of current limiting amplifier that transforms single input signal to differential output signal. Using AMS BiCMOS model, both BJT version and MOS version was designed. Total power consumption is O.lmW, and IC size is $0.3mm^2$

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Magnetoresistance Properties of Hybrid GMR-SV Films with Nb Buffer Layers (Nb 버퍼층과 거대자기저항-스핀밸브 하이브리드 다층박막의 자기저항 특성)

  • Yang, Woo-Il;Choi, Jong-Gu;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.27 no.3
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    • pp.82-86
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    • 2017
  • The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

Vapor phase synthesis of silicon nitride powder using DC plasma torch (DC 플라즈마 토치를 이용한 질화규소 분말의 기상합성)

  • Hwang, Y.;Sohn, Y.U.;Chung, H.S.;Choi, S.K.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.4
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    • pp.370-377
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    • 1994
  • DC plasma torch which is a non-transferred type was constructed and silicon nitride powders were produced. Ar gas is used as a plasma gas and gas reactants with the carrier gas are introduced beneath the plasma ignition part. Two slits are attached and a reactive quenching gas is introduced through them. Using $SiCl_4 and NH_3$ as starting materials, silicon nitride powders were produced. As-produced powders were amorphous and crystalline silicon nitrides were obtained by heating at $1420^{\circ}C$ for two hours under nitrogen atmosphere. Silicon nitride phase was identified in the XRD patterns and IR spectrum, and the image of the powders before and after heating was observed from the TEM analysis.

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Formation of hydrophilic polymer films by DC-plasma of monomer and reactive gases

  • Kim, Ki-Hwan;Park, Sung-Chang;doo-Jin choi;Jung, Hyung-Jin;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.161-161
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    • 1999
  • In the field of material science, the interests and efforts to modify the surface of materials in agreement with the need of usage have been extensively increasing. he modification to improve the wettability of surface is very important is terms of adhesion, printing, etc. It is very difficult to modify metal surface into hydrophilic one. therefore, surfactant coating has been generally used in many cases. However, surfactant has disadvantages such as environmental problem, soluble in water. in this study, hydrophilic polymer films as alternative of surfactant were deposited on metal substrate by DC plasma polymerization. Hydrophilic polymer films deposited by DC plasma show many merits such as good wettability, stone adhesion to substrate, high resistance to most chemicals. Monomer gas and reactive gas were used as source plasma polymerization. Plasma polymerized films were fabricated with process parameters of deposition time, ratio of gas mixture, current, pressure, etc. Effects of these variables on wettability of plasma polymer films will be discussed. With XPS and FT-IR analyses of plasma polymeric films, the relation between wettability and chemical state of polymer films by DC plasma was investigated.

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Iodine doping effect of $\sigma$ -conjugate poly(methyl-phenylsilene). ($\sigma$-공액 고분자 poly(methyl-phenylsilyene)의 요오드 도핑효과 연구)

  • ;;S. Nespurek
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.145-148
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    • 2000
  • In contrast to the $\pi$ -conjugated polymers which typically absorb light only in the visible spectral region, the $\sigma$-conjugated polymers can be used as efficient material absorbing light in the UV region. In this work, the electronic and optical properties of I$_2$-doped $\sigma$ -conjugated poly (methyl-phenylsilylene) (PMPSi) polymer were investigated. DC conductivity up to 1.2$\times$10$^{-4}$ S/cm was obtained by I$_2$-doping. In UV/Vis absorbance spectrum, a new peak was observed near 370 nm, which was explained by polaron model. The photoluminescence (PL) intensity decreased with increasing degree of I$_2$-doping, and the Infrared (IR) spectrum analysis revealed that the dopants are not directly coupled to the polymer, but effect motions of the methyl and phenyl groups.

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Microstructure and Electrical Properties of Poly-N-isopropylacrylamide- N-vinylcarbazole Copolymers

  • Pierson, R.;Basavaraja, C.;Kim, Na-Ri;Jo, Eun-Ae;Huh, Do-Sung
    • Bulletin of the Korean Chemical Society
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    • v.30 no.9
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    • pp.2057-2060
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    • 2009
  • Conducting poly-N-isopropylacrylamide-N-vinyl carbazole (PNI-nvc) copolymers were synthesized via in situ deposition technique by dissolving different weight percentages of N-vinyl carbazole (10, 20, 30, and 40%). The structural morphology and FT-IR studies support the interaction between PNI and N-vinyl carbazole. The temperaturedependent DC conductivity of PNI-nvc was studied within the range of 300 ${\leq}\;T\;{\leq}$ 500 K, presenting evidence for the transport properties of PNI-nvc. The DC conductivity of PNI-nvc copolymers signifies the future development of new nanocopolymers that acts as a multifunctional material.

Electrogravimetric and Electrochemical Ac Response of Polypyrrole Films

  • Yang, Haesik;Lee, Hochun;Kwak, Juhyoun
    • Analytical Science and Technology
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    • v.8 no.4
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    • pp.663-668
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    • 1995
  • Ion transport of a polypyrrole/chloride (PPy/Cl) film and a polypyrrole/poly(styenesulfonate) (PPy/PSS) film as a function of applied dc potential was investigated by employing electrogravimetric impedance technique and electrochemical impedance technique. The cation and anion contribution to the whole charge capacitance and the diffusion coefficients of cation and anion in a PPy/PSS film were calculated by fitting the electrogravimetric impedance data with proposed model circuit. The diffusion coefficients of $Na^+$ in a 1 M $NaClO_4$ solution are over 1 order of magnitude larger than those of $ClO{_4}^-$, and $ClO{_4}^-$ contribution to charge compensation decreases as dc potential lowers. The charge compensation of a PPy/Cl film ir a 1 M CsCl solution is carried out largely by $Cl^-$ at 0.2 V vs. Ag/AgCl and by $Cs^+$ as well as $Cl^-$ at -0.4 V.

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Application of DC Resistivity Survey from Upper Portion of Concrete and Geostatistical Integrated Analysis (콘크리트 상부에서 전기비저항 탐사 적용 및 지구통계학적 복합 해석)

  • Lee, Heuisoon;Oh, Seokhoon;Chung, Hojoon;Noh, Myounggun;Ji, Yoonsoo;Ahn, Taegyu;Song, Sung-Ho;Yong, Hwan-Ho
    • Journal of the Korean earth science society
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    • v.35 no.1
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    • pp.29-40
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    • 2014
  • A DC resistivity survey was performed to detect anomalies beneath concrete pavement. A set of high conductive media and planar electrodes were used to lessen the effect's a high contact resistance of concrete. Results of the resistivity survey were analyzed and compared with those of other geophysical surveys such as Ground Penetration Radar (GPR), Impulse Response (IR), and Multi-channel Analysis of Surface Waves (MASW), which were carried out in the same location. The results of resistivity survey showed a high resistive distribution in the section of sink and pavement where a pattern of reinforcement was observed through the GPR survey. Also, a comparison of results between the IR and resistivity surveys indicated that the high resistivity was produced by the high dynamic stiffness in the reinforced section. The co-Kriging of both the results of DC resistivity and MASW surveys at the same location showed that an integrated geostatistical analysis is able to give more accurate description on the anomalous subsurface region than can a separate analysis of each geophysical approach. This study suggests that the integrated geostatistical approaches were used for a decision-making process based on the geophysical surveys.

Properties of a free-standing diamond wafer deposited by the multi-cathode direct current plasma assisted CVD method (다음극 직류전원플라즈마 화학 증착법에 의해 합성된 자유막 다이아몬드 웨이퍼의 특성)

  • 이재갑;박종완
    • Journal of the Korean Vacuum Society
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    • v.10 no.3
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    • pp.356-360
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    • 2001
  • Properties of a free-standing diamond wafer with a diameter of 80 mm and a thickness of 900~950 $mu extrm{m}$ deposited by the multi-cathode direct current plasma assisted chemical vapor deposition (MCDC PACVD) method were investigated. Defects of the diamond film were observed by optical transmission microscopy and its crystallinity was characterized by Raman and IR spectroscopy. Defects were distributed partially on boundaries of the grain. In the grain, (111) plane contained a higher defect density than that on (100) plane. FWHM of Raman diamond peak and IR transmission at 10.6 $\mu\textrm{m}$ were 4.6 $\textrm{cm}^{-1}$ /~5.3 $\textrm{cm}^{-1}$ and 51.7 ~ 61.9 %, and their uniformity was $\pm$7% and $\pm$9%, respectively. The diamond quality decreased with going from center to edge of the wafer.

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