• KIPS Transactions on Computer and Communication Systems
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• v.10 no.7
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• pp.199-204
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• 2021

Digital substation refers to a substation that digitizes functions and communication methods of power facilities such as monitoring, measuring, control, protection, and operation based on IEC 61850, an international standard for the purpose of intelligent power grids. Based on the intelligent operating system, efficient monitoring and control of power facilities is possible, and automatic recovery function and remote control are possible in the event of an accident, enabling rapid power failure recovery. With the development of digital technology and the expansion of the introduction of eco-friendly renewable energy and electric vehicles, the spread of direct current distribution systems is expected to expand. MVDC is a system that utilizes direct current lines with voltage levels and transmission capacities between HVDCs applied to conventional transmission systems and LVDCs from consumers. Converting existing lines in substations, where most power equipment is alternating current centric, to direct current lines will reduce transmission losses and ensure greater current capacity. The process bus of a digital substation is a communication network consisting of communication equipment such as Ethernet switches that connect installed devices between bay level and process level. For MVDC linkage to existing digital substations, the process level was divided into two buses: AC and DC, and a system that can be comprehensively managed in conjunction with diagnostic IEDs as well as surveillance and control was proposed.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.263-271
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• 1994

We have produced $Co_{1-x}Pt_{x}(X\;=\;0.53\;and\;0.75)$ alloy films by DC magnetron sputtering at various substrate temperatures and sputtering pressures. Sputter-deposited Co-Pt alloy films showed a strong (111) texture, and the degree of (111) texture of the as-deposited film was found to depend on the substrate temperature and Ar pressure. However, we observed that the degree of (111) texture did not affect the magnetic properties. In addition, we have investigated the effect of heat-treatment on magnetic properties of these films. While the magnetic properties of the $Co_{0.25}Pt_{0.75}$ alloy films showed no noticeable changes, the coercivities and the squarenesses of the $Co_{0.47}Pt_{0.53}$ alloy films were drastically increased by annealing. Structural analysis using transmission electron microscopy(TEM) and x-ray diffractornetry(XRD) revealed that $CoPt(L1_{0})$ and $CoPt_3(L1_{2})$ ordered phases, respectively, were formed, each with a strong (111) texture. By comparing the magnetic properties between $CoPt(L1_{0})$ and $CoPt_3(L1_{2})$ ordered phases in relation to the atomic arrangements in a unit cell, we conclude that the magnetic anisotropy in the Co-Pt alloy system depends mainly on the atomic arrangements of Co and Pt.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.6
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• pp.553-558
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• 2011

This paper describes the development and test result of S-band Transmitter flight model(FM) of STSAT-3 by satellite research center(SaTReC), KAIST. The communication sub-system of STSAT-3 is consist of two different frequency band channels, S-band for Telemetry & Command and X-band for mission data. S-band Transmitter(STX) functionally made of modulator, frequency synthesizer, power amp and DC/DC converter. The transmission data is modulated by FSK(Frequency Shift Keying) and the interface between spacecraft sub-module and STX is RS-422 standard method. The FM STX is based on modular design. The RF output power of STX is 1.5W(31.7dBm) and BER of STX is under $1{\times}10^{-5}$ which meets the specification respectively. The FM STX is delivered Spacecraft Assembly, Integration and Test(AIT) level through the completion of functional Test and environmental(vibration, thermal vacuum) Test successfully.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.184-188
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• 2001

Using a DC-sputter and changing the substrate temperature to room temperature and 200$\^{C}$, we manufactured each Co-22%Cr alloy thin-films, which has a uniform micro-structure at room temperature, and a fine self-organized nato structure (SONS) at the inside of the grain at the elevated temperature. We also investigated the microstructure and domain structure using a transmission electron microscope (TEM) and a magnetic force microscope (MFM). We managed to corrode selectively Co-enriched phase, then investigate the microstructure using a TEM. We found that it has a uniform composition when it is manufactured at room temperature, but, we found that it has a unique microstructure, which has a plate-like fine Co-enriched phase, with the formation of SONS at the inside of the grain at the elevated temperature. In MFM characterization, we found maze-type domains at the period of 5000 when the substrate temperature maintains at room temperature. We define that the maze-type domain has a disadvantage at the high density recording because it generates noises easily as the exchange coupling energy between the grains is big. On the other hand, there is only a fine domain structure at the period of 500 when the substrate temperature maintains at 200 $\^{C}$. We define that the fine domain structure has an advantage at the high density magnetic recording because it has thermal stability due to small exchange coupling energy.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2674-2685
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• 1997

In this paper, the design and imprlementation of dual-band power amplifier which is used as a critical part for mobile phone to be simultaneously working at a dual band, 800MHz CDAM and PCS frequency band is described. DC operating point of power FET is limited to Class-B to enable long talk time considering that the tyupical power range of CDMA phones in working is around 10 to Class-B to enable long talk time considering that the typical power range of CDMA phones in working is around 10 to 15dBm, i.e., liner range. The power amplifier which employs two GaAs FETs with good linerity at a low operating point has duplexer cuplexer circuit to separate two frequency bands at input and output stage. Electromagnetic analysis for via holes and coupling between narrow transmission lines is included to design a circuit. Moduld size of 0.96CC($22{\times}14.5{\times}3mm^3$) and maximum module current of 130mA at output power range, 10 to 15dBm are attained. The power amplifer module has achieved ACPR performance with 2 to 3dB marging from IS-95 requirement at output powers, 23.5dBm for PCS and 28dBm for 800MHz CDMA respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.6
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• pp.590-596
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• 2020

In the island areas where system connection with the commercial power grid is difficult, it is quite important to find a method to efficiently manage energy produced with independent microgrids. In this paper, a prosumer management system for P2P power transaction was realized through the testing the power meter and the response rate of the collected data for the power produced in the small-scale microgrids in which hybrid models of solar power and wind power were implemented. The power network of the microgrid prosumer was composed of mesh structure and the P2P power transaction was tested through the power meter and DC power transmitter in the off-grid sites which were independently constructed in three places. The measurement values of the power meter showed significant results of voltage (average): 380V + 0.9V, current (average): + 0.01A, power: 1000W (-1W) with an error range within ±1%. Stabilization of the server was also confirmed with the response rate of 0.32 sec. for the main screen, 2.61 sec. for the cumulative power generation, and 0.11 sec for the power transaction through the transmission of 50 data in real time. Therefore, the proposed system was validated as a P2P power transaction system that can be used as an independent network without transmitted by Korea Electric Power Corporation (KEPCO).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.101-104
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• 2008

GaN films were grown on the vertical and horizontal reactors by the hydride vapour phase epitaxy (HVPE). The structural and optical characteristics of the GaN films were investigated depending on the reactor-type. GaN epilayers were characterized by double crystal X-ray diffraction (DC-XRD), transmission electron microscopy (TEM) and photoluminescence (PL). Surface defects of two kinds of the GaN films were revealed by the wet chemical etching method, using $H_3PO_4$ acid at $200^{\circ}C$ for 8 minutes. Hexagonal etch pits were analyzed by optical microscopy and SEM. Etch pit densities were calculated to be approximately $1.4{\times}10^7$ and $1.2{\times}10^6\;cm^{-2}$ for GaN layers grown on horizontal and vertical reactors, respectively. Those results show GaN grown in the vertical reactor having a better quality of optical properties and crystallinity than that in the horizontal reactor.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.3
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• pp.311-317
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• 2013

In this paper, we proposed high speed LDPC decoding algorithm based on DVB-S2 standard for applying marine communications in order to multimedia transmission. For implementing the high speed LDPC decoder, HSS algorithm which reduce the iteration numbers without performance degradation is applied. In HSS algorithm, check node update units are update at the same time of bit node update. HSS can be accelerated to the decoding speed because it does not need to separate calculation of the bit nodes, However, check node calculation blocks need many clocks because of just one memory is used. Therefore, this paper proposed partial memory structure in order to reduced the delay and high speed decoder is possible. The results of the simulation, when the max number of iteration set to 30 times, decoding throughput of HSS algorithm is 326 Mbit/s and decoding speed of proposed algorithm is 2.29 Gbit/s. So, decoding speed of proposed algorithm more than 7 times could be obtained compared to the HSS algorithm.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.