Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth |
Lai, Van Thi Ha
(Division of Material Science and Engineering, Hanyang University)
Jung, Jin-Huyn (UNIMO Technology Co., Ltd.) Oh, Dong-Keun (Division of Material Science and Engineering, Hanyang University) Choi, Bong-Geun (Division of Material Science and Engineering, Hanyang University) Eun, Jong-Won (Division of Material Science and Engineering, Hanyang University) Lim, Jee-Hun (Division of Material Science and Engineering, Hanyang University) Park, Ji-Eun (Division of Material Science and Engineering, Hanyang University) Lee, Seong-Kuk (UNIMO Photron) Yi, Sung (Department of Chemical Engineering, Hanyang University) Shim, Kwang-Bo (Division of Material Science and Engineering, Hanyang University) |
1 | H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies", J. Appl. Phys. 76 (1994) 1363 DOI ScienceOn |
2 | M.A. Khan, A. Bhattarai, J.N. Kuznia and D.T. Olson, "High electron mobility transistor based on a heterojunction", Appl. Phys. Lett. 63 (1993) 1214 DOI ScienceOn |
3 | M.A. Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.E. Burns and M.S. Shur, "Microwave performance of a 0.25 m gate AlGaN/GaN heterostructure field effect transistor", Appl. Phys. Lett. 65 (1994) 1121 DOI ScienceOn |
4 | S.K. Hong, B.J. Kim, H.S. Park, Y. Park, S.Y. Yoon and T.I. Kim, "Evaluation of nanopipes in MOCVD grown (0001) GaN/ by wet chemical etching", J. Cryst. Growth 191 (1998) 275 DOI ScienceOn |
5 | Y. Morimoto, "Few characteristics of epitaxial GaNEtching and thermal decomposition", J. Electrochem.Soc. 121 (1974) 1383 DOI |
6 | P. Ruterana, M. Albrecht and J. Neugebauer, "Nitride semiconductors: Handbook on materials and devices", 1st ed. (Wiley, 2003) p.4 |
7 | A. Shintani and S. Minagawa, "Etching of GaN using phosphoric acid", J. Electrochem. Soc. 123 (1976) 706 DOI |
8 | X.A. Cao, S.F. LeBoeuf, M.P. D'Evelyn, S.D. Arthur and J. Kretchmer, "Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates", Appl.Phys. Lett. 84 (2004) 4313 DOI ScienceOn |