• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.444-450
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• 2010

In the present study, the microscopic degradation of copper and copper alloy subjected to cyclic deformation has been evaluated by the electrical resistivity measurement using the DC four terminal potential method. The copper (Cu) and copper alloy (Cu-35Zn), whose stacking fault energy is much different each other, were cyclically deformed to investigate the response of the electrical resistivity to different dislocation substructures. Dislocation cell substructure was developed in the Cu, while the planar array of dislocation structure was developed in the Cu-35Zn alloy increasing dislocation density with fatigue cycles. The electrical resistivity increased rapidly in the initial stage of fatigue deformation in both materials. Moreover, after the fatigue test it increased by about 7 % for the Cu and 6.5 % for the Cu-35Zn alloy, respectively. From these consistent results, it may be concluded that the dislocation cell structure responds to the electrical resistivity more sensitively than the planar array dislocation structure evolved during cyclic fatigue.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.7-17
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• 2014

Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.69-69
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• 2017

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. There effluents are mainly treated by conventional technologies such are aerobic, anaerobic treatment and chemical coagulation. But, there processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These techniques include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that show higher purification results and low toxic sludge. There are many kinds of electrode materials for electrochemical process, among them, boron doped diamond (BDD) attracts attention due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD, among them, researches are focused BDD on Si substrate. But, Si substrate is hard to apply electrode application due to the brittleness and low life time. And other substrates are also not suitable for wastewater treatment electrode due to high cost. To solve these problems, Ti has been candidate as substrate in consideration of cost and properties. But there are critical issues about adhesion that must be overcome to apply Ti as substrate. In this study, to overcome this problem, TiN interlayer is introduced between BDD and Ti substrate. TiN has higher electrical and thermal conductivity, melting point, and similar crystalline structure with diamond. The TiN interlayer was deposited by reactive DC magnetron sputtering (DCMS) with thickness of 50 nm, $1{\mu}m$. The microstructure of BDD films with TiN interlayer were estimated by FE-SEM and XRD. There are no significant differences in surface grain size despite of various interlayer. In wastewater treatment results, the BDD electrode with TiN (50nm) showed the highest electrolysis speed at livestock wastewater treatment experiments. It is thought to be that TiN with thickness of 50 nm successfully suppressed formation of TiC that harmful to adhesion. And TiN with thickness of $1{\mu}m$ cannot suppress TiC formation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.154-154
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• 2017

Ti-6Al-4V alloys are widely used as metal-lic biomaterials in dentistry and orthopedics due to its excellent biocompatibility and me-chanical properties. However, because of low biological activity, it is difficult to form bone growth directly on the surface of titanium implants. For this reason, surface treatment of plasma electrolytic oxidation(PEO) was used for dental implants. To enhance bioac-tivity on the surface, strontium(Sr) and sili-con(Si) ions can be added to PEO treated sur-face in the electrolyte containing these ions. The presence of Sr in the coating enhances osteoblast activity and differentiation, where-as it inhibits osteoclast production and prolif-eration. And Si has been found to be essen-tial for normal bone, cartilage growth, and development. In this study, electrochemical characteristics of Ca, P, Sr, and Si ions from PEO-treated Ti-6Al-4V alloy surface was re-searched using various experimental instruments. DC power is used and Ti-6Al-4V al-loy was subjected to a voltage of 280 V for 3 minutes in the electrolyte containing 5, 10, 20M% Sr ion and 5M% Si ion. The morphol-ogies of PEO-treated Ti-6Al-4V alloy by electrochemical anodization were examined by field-emission scanning electron micro-scopes (FE-SEM), energy dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD) and corrosion analysis using AC impedance and potentiodynamic polarization test in 0.9% NaCl solution at similar body tempera-ture using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to + 2000mV.

• Fisheries and Aquatic Sciences
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• v.21 no.9
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• pp.21.1-21.8
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• 2018

In the present study, we first evaluated the melanin inhibitory effect of four crude 70% ethanol extracts separated from soft corals abundantly growing along the seawaters of Jeju Island, South Korea, including Dendronephthya castanea (DC), Dendronephthya gigantea (DG), Dendronephthya puetteri (DP), and Dendronephthya spinulosa (DS). Among the four ethanol extracts, the ethanol extract of DP (DPE) did not possess any cytotoxic effect on B16F10 cells. However, all other three extracts showed a cytotoxic effect. Also, DPE reduced the melanin content and the cellular tyrosinase activity without cytotoxicity, compared to the ${\alpha}-MSH$-stimulated B16F10 cells. Specifically, DPE downregulated the expression levels of tyrosinase and microphthalmia-associated transcription factor by activating the ERK signaling cascade in ${\alpha}-MSH$-stimulated B16F10 cells. Interestingly, the melanin inhibitory effect of DPE was abolished by the co-treatment of PD98059, an ERK inhibitor. According to these results, we suggest that DPE has whitening capacity with the melanin inhibitory effects by activating ERK signaling and could be used as a potential natural melanin inhibitor for cosmeceutical products.

• Tribology and Lubricants
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• v.32 no.4
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• pp.125-131
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• 2016

In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.85-90
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• 1997

A new ionized sputtering process was developed to fill small trench or via using additional ionizing mechanism of sputtered particles from 32cm $AlCu_x$(x=0.5%) cathode target with rotating magnet, then drawn toward substrate by small negative DC potential. The radial uniformity in RFI magnetron sputtering was studied by plasma diagnosis and appropriate RFI coil design to improve it. Optical emission intensities of excited species. $Ar^{\circ}, \;Ar^+;Al^+, \;Al^{\circ}$ are measured across the radial direction and showed close correlation with deposit's bottom to top thickness ratios in trenches and vias of submicron opening and 1.5 aspect ratio. After increase of the diameter of RF coil from 29 cm to 32 cm and improved the power leading feedthrough symmetry by removal of asymmetric single turn region, there was an increase of uniformity from 7.5% to 1.5% in bottom to top thickness ratio in 0.6 $\mu\textrm{m}$ vias.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.100-100
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• 2011

Nanomaterial architecture with highly ordered, vertically oriented $TiO_2$ nanotube arrays shows a good promise for diverse technological applications. As inspired from the literature reports that Nickel modification can improve the photocatalytic activity of $TiO_2$, it was planned to coat Ni into the $TiO_2$ matrix. In this study, first $TiO_2$ nanotubes(TiNTs) were prepared by anodization (60V,3min) in HF-free aqueous electrolyte on ultrasonically cleaned polished titanium sheet substrates ($1{\times}7cm^2$). The typical thickness of the sintered TiNT ($500^{\circ}C$for10min) was ~1 micronas confirmed from the FESEM study. In the next part, as-anodized and sintered TiNT/Ti photoanodes were used to coat Ni by AC electrodeposition from aqueous 0.1M nickel sulphate solution. During AC electrodeposition, conditions such as 1V DC offset voltage, 9V amplitude (peak-to-peak) and 750 Hz frequency were fixed constant and the deposition time was varied as 0.5 min, 1 min, 2 min and 10 min. The photoelectrochemical performance of pristine and Ni modified TiNT/Ti photoanodes was measured in 1N NaOH electrolyte under 1 SUN illumination in the potential range of -1V and 1.2V versus Ag/AgCl reference electrode. The photocurrent performance of TiNT/Ti photoanode decreased upon Ni modification and the results were confirmed after repeated experiments. This suggests us that Ni modification inhibits the photoelectrochemical performance of $TiO_2$ nanotubes.