• Title/Summary/Keyword: DC gain

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Diminution of Current Measurement Error in Vector Controlled AC Motor Drives

  • Jung Han-Su;Kim Jang-Mok;Kim Cheul-U;Choi Cheol;Jung Tae-Uk
    • Journal of Power Electronics
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    • v.5 no.2
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    • pp.151-159
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    • 2005
  • The errors generated from current measurement paths are inevitable, and they can be divided into two categories: offset error and scaling error. The current data including these errors cause periodic speed ripples which are one and two times the stator electrical frequency respectively. Since these undesirable ripples bring about harmful influences to motor driving systems, a compensation algorithm must be introduced to the control algorithm of the motor drive. In this paper, a new compensation algorithm is proposed. The signal of the integrator output of the d-axis current regulator is chosen and processed to compensate for the current measurement errors. Usually the d-axis current command is zero or constant to acquire the maximum torque or unity power factor in the ac drive system, and the output of the d-axis current regulator is nearly zero or constant as well. If the stator currents include the offset and scaling errors, the respective motor speed produces a ripple related to one and two times the stator electrical frequency, and the signal of the integrator output of the d-axis current regulator also produces the ripple as the motor speed does. The compensation of the current measurement errors is easily implemented to smooth the signal of the integrator output of the d-axis current regulator by subtracting the DC offset value or rescaling the gain of the hall sensor. Therefore, the proposed algorithm has several features: the robustness in the variation of the mechanical parameters, the application of the steady and transient state, the ease of implementation, and less computation time. The MATLAB simulation and experimental results are shown in order to verify the validity of the proposed current compensating algorithm.

Studies on the millimeter-wave Passive Imaging System (밀리미터파 수동 이미징 시스템 연구)

  • Jung Min-Kyoo;Chae Yeon-Sik;Kim Soon-Koo;Koji Mizuno;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.5 s.347
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    • pp.182-188
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    • 2006
  • In this study, we have designed the millimeter-wave passive imaging system which records energy that is reflected or emitted from the source and produces image. The lens and front-end of receiver appeared to be important in the system to detect input thermal noise signal. The lens for signal focusing has been designed by optical transfer function. Amplifier of the imaging systemhas been set up with 40dB in maximum gain, 5 dB in maximum noise figure, and 10GHz in bandwidth to enhance sensitivity for thermal noise and to receive it in wide-band width as well. The SBD MSS-20 141B10D diode has been used for the detector circuit to convert amplified millimeter-wave signals to DC output.

Anti-Parallel Diode Pair(APDP) Mixer over 3~5 GHz for Ultra Wideband(UWB) Systems (역병렬 다이오드를 이용한 초광대역 시스템용 3~5 GHz 혼합기 설계)

  • Jung Goo-Young;Lee Dong-Hwan;Yun Tae-Yeoul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.7 s.98
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    • pp.681-689
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    • 2005
  • This paper presents an ultra wide band(UWB) mixer using anti-parallel diode pair(APDP) with simulation and measurement results. The proposed mixer adopts the even-harmonic direct conversion mixing, which consists of a couple of filter, in-phase wilkinson power divider, wideband $45^{\circ}$ power divider, and APDP. The m mixer is operating over 3.1 to 4.8 GHz and producing quadrature(I/Q) outputs with a conversion loss of 18 dB and input third order intercept point($IIP_3$) of 15 dBm. I/Q outputs also have difference of about 0.5 dB and phase difference of ${\times}3^{\circ}$ and $P_{1dB}$ of 2 dBm.

Three-phase Four-wire Series Active Power Filter Control Strategy for The Compensation of Harmonics and Reactive Power Based-on Direct Compensating Voltage Extraction Method (직접 보상전압 추출기법을 이용하여 고조파전류와 무효전력을 보상하는 3상 4선식 직렬 형 능동전력필터의 제어법)

  • 김진선;김영석
    • The Transactions of the Korean Institute of Power Electronics
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    • v.9 no.3
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    • pp.213-221
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    • 2004
  • In recent years, since more and more diode rectifiers with smoothing dc capacitor are used in electronic equipments, household appliances and ac drives, harmonics generated by these loads have become a major issue. In addition, 3-phase 4-wire system is widely employed in distributing electric energy to several office building and manufacturing plants. This systems show excessive currents in the neutral. These neutral currents are fundamentally third harmonic, and their presence is tied to wiring failure, elevating of neutral potentials, transformer overheating, etc. In response to the concerns, this paper proposes a series active power filter scheme based on direct compensating voltage extraction method and the advantage of this control algorithm is direct extraction of compensation voltage reference without multiplying gain. Therefore, the calculation of the compensation voltage reference will becom much simpler than other control algorithm. To verify the effectiveness of the proposed algorithm, a prototype active power filter is built and some experiments are carried out.

A C-Band CMOS Bi-Directional T/R Chipset for Phased Array Antenna (위상 배열 안테나를 위한 C-대역 CMOS 양방향 T/R 칩셋)

  • Han, Jang-Hoon;Kim, Jeong-Geun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.7
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    • pp.571-575
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    • 2017
  • This paper presents a C-band bi-directional T/R chipset in $0.13{\mu}m$ TSMC CMOS technology for phased array antenna. The T/R chipset, which is a key component of phased array antenna, consists of a 6 bit phase shifter, a 6 bit step attenuator, and three bi-directional gain amplifiers. The phase shifter is controlled up to $354^{\circ}$ with $5.625^{\circ}$ phase step for precise beam steering. The step attenuator is also controlled up to 31.5 dB with 0.5 dB attenuation step for the side lobe level rejection. The LDO(Low Drop Output) regulator for stable 1.2 V DC power and the SPI(Serial Peripheral Interface) for digital control are integrated in the chipset. The chip size is $2.5{\times}1.5mm^2$ including pads.

Analysis of Acoustic Signals Produced by Corona and Series-arc Discharges (코로나와 직렬아크 방전에 의해 발생한 음향신호의 분석)

  • Jo, Hyang-Eun;Jin, Chang-Hwan;Park, Dae-Won;Kil, Gyung-Suk;Ahn, Chang-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.147-152
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    • 2012
  • This paper dealt with the frequency component analysis of acoustic signals produced by corona and series-arc discharges as a diagnostic technique for closed-switchboards. Corona and series-arc discharge were simulated by a needle-plane electrode and an arc generator specified in UL1699, respectively. Acoustic signal was detected by a wideband acoustic sensor with a frequency bandwidth of 4 Hz~100 kHz (-3 dB). We analyzed frequency spectrums of the acoustic signals detected in various discharge conditions. The results showed that acoustic signals mainly exist in ranges from 30 kHz to 60 kHz. From the experimental results, an acoustic detection system which consists of a constant current power supply (CCP), a low noise amplifier (LNA) and a band pass filter was designed and fabricated. The CCP separates the signal component from the DC source of acoustic sensor, and the LNA has a gain of 40 dB in ranges of 280 Hz~320 kHz. The high and the low cut-off frequency are 30 kHz and 60 kHz, respectively. We could detect corona and series-arc discharges without any interference by the acoustic detection system, and the best frequency is considered in ranges of 30 kHz~60 kHz.

Adaptive QP Selection using residual transform coefficients of block (블록의 잔여 변환 계수를 이용한 적응적인 QP 선택)

  • Jun, Hye-Min;Seo, Jeong-Hoon;Lee, Yung-Lyul
    • Journal of Broadcast Engineering
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    • v.14 no.2
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    • pp.219-227
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    • 2009
  • In H.264/AVC, if each block is quantized with a adaptive quantization parameter(QP) regardless of the characteristics of a block, it could be the deterioration of the picture quality. In this paper, an adaptive block-based QP selection method is proposed in order to improve picture quality by utilizing the bit amounts of the zigzag-scanned integer transform coefficients of the neighboring blocks and changing the QP value in the current block. The proposed method works in the same way as the encoder and decoder without transmitting the change of QP value to the decoder side. The experimental results show that the proposed method achieves a gain of about $0.1\sim0.3dB$ compared with H.264/AVC.

Electrical Characteristics of the Packaged SiGe Hetero-Junction Bipolar Transistors Fabricated with Various Conditions of the Collector Formation (패키지된 실리콘-게르마늄 이종접합 바이폴라 트랜지스터의 콜렉터 형성 조건에 따른 전기적 특성)

  • Lee, Seung-Yun;Lee, Sang-Heung;Kim, Hong-Seung;Park, Chan-U;Kim, Sang-Hun;Lee, Ja-Yeol;Sim, Gyu-Hwan;Gang, Jin-Yeong
    • Korean Journal of Materials Research
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    • v.12 no.6
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    • pp.470-475
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    • 2002
  • The effects of the conditions of the collector formation on electrical characteristics of the packaged SiGe hetero-junction bipolar transistors (HBT) were investigated. While the DC characteristics of SiGe HBTs such as IV characteristic, forward current gain, Early voltage, and breakdown voltage were hardly changed after packaging, the AC characteristics such as $f_{\tau}\; and\; f_{max}$ were degraded severely. With the rise of the collector concentration, the break-down voltage decreased but the $f_{\tau}$ increased. Additionally, $\beta$ and $f_{\tau}$ values were kept high in the range of elevated collector current due to the increase of the critical current density for the onset of the Kirk effect. The devices As implanted before the collector deposition showed lower breakdown voltage and higher $f_{\tau}$ than the others, which seems to be originated from the As up-diffusion resulting in the thinner collector.

A Study on a Rectenna for Low Power Density at 2.45 GHz (2.45 GHz대 저전력용 렉테나에 관한 연구)

  • Park, Bong-Kook;Seo, Hong-Eun;Cho, Ik-Hyun;Kim, Yea-Ji
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.862-867
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    • 2009
  • This paper presents a study on a rectenna for rectification of incident low power microwave signals with power densities less than 2 mW/$cm^2$ at 2.45 GHz. The proposed rectenna is designed and implemented by a rectifier with voltage doubler structure and a printed Yagi antenna which suppress re-radiation of the second order harmonic of fundamental frequency. The printed Yagi antenna has a gain of about 5 dB, and the measured conversion efficiencies of the rectenna are from 32 % to 42 % when its incident power levels are from 0 dBm to 14 dBm. The developed rectenna is expected to be useful in the power transmission system.

Growth of AlN/GaN HEMT structure Using Indium-surfactant

  • Kim, Jeong-Gil;Won, Chul-Ho;Kim, Do-Kywn;Jo, Young-Woo;Lee, Jun-Hyeok;Kim, Yong-Tae;Cristoloveanu, Sorin;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.490-496
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    • 2015
  • We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.