• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.11
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• pp.981-987
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• 2014

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a MOSFET (metal-oxide semiconductor field effect transistor), a PWM-IC (pulse width modulation-integrated circuit) controller, inductor, capacitor, etc. It is shown that the variation of threshold voltage and the breakdown voltage in the electrical characteristics of MOSFET occurs by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 5 heavy ions make the gate of MOSFET broken in SEGR (Single Event Gate Rupture) testing. TID testing on MOSFET is accomplished up to the total dose of 40 krad, and the cross section($cm^2$) versus LET(MeV/mg/$cm^2$) in the MOSFET operation is studied at SEGR testing after implementation of the controller board.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.109-116
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• 2005

Wind power and photovoltaic(PV) systems are getting into the spotlight as substitute energy. But problem is happened stability by speed change of wind and the power output of the sun's ray. The power output amount according to velocity of wind power system. System breakdown can happen at change of sudden velocity, typhoon and night. This paper shows a automatic tail safety brake controller based on feedback control using wind velocity. The operation of automatic tail safety controller verified by manual test. PV system is a energy change system by temperature of sun's ray and cell. Maximum power point tracking(MPPT) is used in PV systems to maximize the photovoltaic array output power. In existed PV system is low output and changeable DC voltage for boost and filtering the buck-boost converter use. But, this paper established deformed DC-DC converter. Changed Buck-boost converter's unlined output current to line output current using DC-DC converter. This is effect that reduce ripple of output current. Proved through an output waveform comparison experiment. Finally, tail safety brake controller is established to wind turbine system for stability elevation and DC-DC converter is established on PV system for stability output.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.4
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• pp.231-237
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• 2006

This paper proposes an effective drive of high intensity discharge (HID) lamp ballast for cars. All control functions of the proposed ballast are implemented using a low-cost single chip microcontroller, PIC16C73 to optimize the total system size and to minimize cost through minimization of total component number. The proposed ballast generates high open-circuit voltage to ignite the lamp and is controlled to supply effectively the power required to shorten warm-up period after the breakdown. The DC-DC converter of the DC-AC converter part of the ballast utilizes the flyback converter topology that can minimize component number. Also, because to more minimize the ballast size, the transformer size must be minimized, for this, PWM (Pulse Width Modulation) pulses are generated with high frequency using the PWM module of the microcontroller. An analysis for this is explained, briefly. As if the operation of the lamp and ballast arrives at steady-state, then the ballast must AC-control the lamp, for this, the microcontroller utilizes the other PWM module. And the part related to the igniter is explained, briefly. It is shown through experimental results that the controller of the proposed ballast has good performance for the HID lamp for cars.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.111-117
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• 2009

This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.

• Journal of Power Electronics
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• v.16 no.1
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• pp.84-92
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• 2016

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1763-1768
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• 2016

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.3
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• pp.51-56
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• 2001

In this paper, the effect of magnetic field on corona discharge phenomena was experimentally investigated in the needle-plate electrode geometry. Needle-plate geometry discharge system with magnetic field at a right angle to the electric field was made. The corona discharge characteristics with magnetic field were investigated and compared with the corona characteristics without magnetic field in atmospheric pressure. As a result, in case of positive DC corona discharge with magnetic field, corona discharge zone was significantly wider, corona current was lower, and breakdown voltage was higher than those without magnetic field. However, in case of negative DC corona discharge with magnetic field, corona current was slightly higher and breakdown voltage was lower than those without magnetic field. It is thought that this result is due to cyclotron motion of charged particles such as electron and ion by magnetic field.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.114-126
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• 2011

The light propagation along a long positive column has been observed in a cold cathode fluorescent lamp. The optical signals are observed with the DC and AC voltage power during lamp operation. The light propagating is observed in the operation with the DC-rippled voltage as well as the AC-voltage. The optical signals propagate from the high voltage side to the ground. These signals show two kinds of features according to the before and after Townsend breakdown. At the dark current before Townsend breakdown, the optical intensity is damped and the propagation velocity is $10^4{\sim}10^5m/s$. At the high current of normal glow after Townsend breakdown, the propagation velocity is 1$10^5{\sim}10^6m/s$ without damping.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.263-266
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• 2007

In this paper approves (AC and DC) high voltage by experimental GIS(Gas Insulated Switchgear) chamber and (AC and DC) power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at (AC and DC) high voltage of Imitation I-Air, $N_2$ : $O_2$ = 79(%) : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's Dielectric Strength using uniform and non-uniform fields(sphere-sphere and Needle-Plane electrode) and studied relations dielectric strength($V_D$) by each P different d.