• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• ETRI Journal
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• 제28권3호
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• pp.386-388
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• 2006

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.7-14
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• 2002

In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.41-42
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• 2008

본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행 하였다. As-doped ZnO 박막 식각 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma;ICP)와 $BCl_3$/Ar 플라즈마에 첨가된 $Cl_2$가스의 비, RF 전력, DC bias voltage, 공정 압력에 대한 식각 속도의 변화를 관찰 하였다. $BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가량 6 sccm 까지는 증가하지만 그 이후 $Cl_2$ 가스의 첨가량이 증가할 때 식각속도가 감소하였다. 이는 플라즈마 내에서 Cl 라디칼의 밀도가 증가함에 따라서 $Ar^+$의 에너지가 감소와 비휘발성 식각 부산물의 증가에 의하여 효과적인 물리적 식각이 이루어 지지 못한 것으로 판단된다. OES를 이용하여 플라즈마 내에서 라디칼들의 빛의 세기를 측정하였고, 식각 후 As-type ZnO 박막 표면에서의 화학적 결합을 보기위해 XPS 분석을 실행하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.726-729
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• 2004

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1284-1287
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• 2005

Peripheral pentacene region gives a significant influence on C-V characteristics of metal-oxide-pentacene capacitor structure. When the gate voltage goes toward negative, the effect of peripheral pentacene region becomes larger. Remaining gate DC bias constant and changing small signal frequency, the capacitance of peripheral pentacene changes along with frequency so that the total capacitance value also changes. The influence of peripheral pentacene region should be removed to measure accurate C-V characteristics, because it is hard to take into account the effect of the region quantitatively. After removing the influence of peripheral pentacene region, acceptor concentration, flat band voltage and depletion width of pentacene thin film are extracted from an accurate C-V curve as $1.58{\times}10^{17}cm^{-3}$, -1.54 V and 39.4 nm, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.627-634
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• 2000

In this paper, new micromachined tunble bandpass filters for multi-band millimeter-wave telecommunication systems are proposed. Two types of mm-wave tunable filters are fabricated using micromachning technology and the responses of the filters are measured. One is two-pole lumped elements filter and the other two-pole resonators filter. Frequency tunability of the filter is achieved by changing the gap between a common CPW ground plate and the movable cantilever beam connected to the transmission line with the controllable renge of 2.5${\mu}m$. The deflection of cantilever beam is measured with the applied DC voltage. With the applied bias voltage from 0 to 50 V, the fabricated filters show 0.6 GHz(2.3%) at 26.6 GHz, and 0.8 GHz(2.5%) at 32 GHz center frequency shift for the lumped elements and resonators filter, respectively. The life time of the fabricated gold cantilever structure are tested.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3271-3273
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• 1999

In this paper, new micromachined tunable bandpass filters for multi-band millimeter-wave telecommunication systems are proposed. Two types of mm-wave tunable filters are fabricated using micromachining technology and the responses of the filters are measured. One is two-pole lumped elements filter and the other two-pole resonators filter. Frequency tunability of the filter is achieved by changing the gap between a common CPW ground plate and the movable cantilever beam connected to the transmission line with the controllable range of 2.5 ${\mu}m$. The deflection of cantilever beam is measured with the applied DC voltage. With the applied bias voltage from 0 to 50 V, the fabricated filters show 0.6 GHz(2.3 %) at 26.6 GHz, and 0.8 GHz(2.5%) at 32 GHz center frequency shift for the lumped elements and resonators filter, respectively.

• 전력전자학회논문지
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• 제12권3호
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• pp.234-240
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• 2007

본 논문에서는 비대칭 컨버터에 비하여 전력소자의 수를 감소하면서도, 고속 운전에 적합한 새로운 멀티레벨 인버터를 제안한다. 제안된 인버터는 기존의 비대칭 컨버터에 비하여 전력소자의 수를 감소시킬 수 있는 특징이 있으며, SRM의 감자구간에서 휠링되는 에너지와 전원에서 공급되는 에너지를 교차적으로 활용하는 방식을 적용함으로써, C-dump 인버터에 비해 커패시터의 정격전압을 낮출 수 있는 장점이 있다. 또한, 제안된 멀티레벨 인버터의 동작 모드는 비대칭 컨버터에 비하여, 충전 레벨의 전원을 정역으로 활용하여 빠른 여자(Excitation)와 감자(Demagnetization) 모드를 가지게 되므로, 제어의 활용성이 매우 높다. 따라서, SRM의 고속 운전에 필요한 여자전류의 빠른 확립을 통하여 응답시간을 개선시키며, 토크 발생구간을 확장시킬 수 있다. 제안된 멀티레벨 인버터 구동형 SRM의 운전특성은 시뮬레이션과 실험을 통해 검증하였다.