• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2008.11a
• /
• pp.53-53
• /
• 2008

기존의 Al 합금 소재의 단점을 보완한 Al-Mg 합금 소재를 이용해 다이캐스팅으로 만들어진 핸드폰 케이스에 적용하고자 titanium 타겟을 사용한 반응성 스퍼터링 공정을 연구하였다. 코팅특성은 스펙트로포토 미터를 이용하여 색상분석을 하였고, 미세표면이미지는 FE-SEM을 이용하였다. DC 마그네트론 스퍼터링에 의한 착색코팅은 산소유량이 많은 경우 밝기 L*값이 더 커졌다. 색상의 편차와 재현성을 나타내주는 ${\Delta}E^*ab$ 값을 비교해보면, 모든 경우 ${\Delta}E^*ab^*$<1로 매우 우수한 색상균일성을 보여준다. FE-SEM에 의한 표면이미지는 전반적으로 산소유량이 많은 0.8SCCM에서 코팅한 경우보다 산소유량이 적은 0.375SCCM에서 코팅한 경우가 결정립계의 구별이 확실하고 결정립 모양이 선명하고 결정립크기도 증가함을 확인할 수 있다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.95-96
• /
• 2007

DC magnetron sputtering 법으로 다양한 $Ga_2O_3$함량비( $2.27{\sim}$ 10.81 wt%)를 가진 고밀도 GZO 소결타겟을 사용하여 GZO박막을 증착한 후 도핑농도에 따른 광학적 특성과 전기적 특성을 조사하였다. GZO($Ga_2O_3$: 6.65 wt%)타겟을 사용하여 기판온도 $300^{\circ}C$에서 증착한 GZO박막은 상대적으로 낮은 비저항($5.1{\times}10^{-4}$ ${\Omega}cm$)과 85% 이상의 높은 투과율을 보였다. 또한 타겟의 $Ga_2O_3$함량이 6.65 wt%일때 광학적 밴드갭 에너지는 3.61 eV로 비교적 큰 흡수계수의 변화를 보였으며 그 이상의 $Ga_2O_3$농도에서는 밴드갭 에너지가 감소하는 경향을 보였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.207-208
• /
• 2012

GZO( Ga-doped ZnO) 및 ZTO (zinc tin Oxide) 박막을 DC, RF magnetron sputtering 공정을 이용하여 증착한 후, 대기 및 진공상태에서 200, $300^{\circ}C$ 조건으로 30분 동안 열처리하였다. ZTO/GZO 박막의 전기적 특성은 ZTO 층과 GZO 층의 두께 비에 의존함을 확인 할 수 있었다. 본 연구에서는 GZO단일 박막과 ZTO/GZO double layer 박막의 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 비교검토 하였다.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.5
• /
• pp.267-274
• /
• 2009

Titanium Chromium Nitrided (TiCrN) coatings were deposited on stainless steel 316 L and Si (100) wafer by inductively coupled plasma assisted D.C. magnetron sputtering at the various sputtering power on Cr target and $N_2/Ar$ gas ratio. Increasing the sputtering power of Cr target, XRD patterns were changed from TiCrN to nitride $Cr_2Ti$. The maximum hardness was $Hk_{3g}$ 3900 at $0.3\;N_2/Ar$ gas ratio. The thickness of the TiCrN films increased as the Cr target power increased, and it showed over $Hk_{5g}3100$ hardness at 100 W, 150 W. TiCrN films were deposited by the ICP assisted DC magnetron sputtering shown good wear resistance as the $N_2/Ar$ gas ratio was 0.1, 0.3.

• Journal of the Korean Magnetics Society
• /
• v.10 no.5
• /
• pp.232-236
• /
• 2000

CoSm thin films with a Cr underlayer have received continuous attention as a potential material for a high density longitudinal magnetic recording media. In this study the Ax gas sputtering pressure effects on the magnetic properties of CoSm thin films, which were fabricated by using a dc magnetron sputtering machine, were investigated. The magnetic switching volume is especially important parameter to understand the thermal stability of the written information, magnetization reversal process and media noise. Therefore, in this paper the effects of sputtering pressure on the magnetic switching volume of CoSm thin films grown on Cr underlayer with the same sputtering conditions was studied. As the Ar sputtering pressure during sputtering of the CoSm magnetic layer increases from 5 to 30 mTorr, the measured switching volumes decreased from 9.0 to 5.2$\times$10$^{-18}$ cm$^3$. The calculated diameter of switching unit from V＊ was less than 22 nm, which satisfies the Sharrock's requirement on the thermal stability of the high density longitudinal magnetic recording media.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.181.2-181.2
• /
• 2015

Sputtering is one of the most popular physical deposition methods due to their versatility and reproducibility. Synthesis of Cr thin films by DC magnetron sputtering using glancing angle deposition (GLAD) has been reported. Chromium thin films have been prepared at two different working pressure($2.0{\times}10-2$, 30, $3.3{\times}10-3torr$) on Si-wafer substrate using magnetron sputtering with glancing angle deposition (GLAD) technique. The thickness of Cr thin films on the substrate was adjusted about 1 mm. The electrical property was measured by four-point probe method. For the measurement of density in the films, an X-ray reflectivity (XRR) was carried out. The sheet resistance and column angle increased with the increase of glancing angle. However, nanohardness and density of Cr thin films decreased as the glancing angle increased. The measured density for the Cr thin films decreased from 6.1 to 3.8 g/cc as the glancing angle increased from $0^{\circ}$ to $90^{\circ}$ degree. The low density of Cr thin films is resulted from the isolated columnar structure of samples. The evolution of the isolated columnar structure was enhanced at the conditions of low sputter pressure and high glancing angle. This GLAD technique can be potentially applied to the synthesis of thin films requiring porous and uniform coating such as thin film catalysts or gas sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.8
• /
• pp.764-768
• /
• 2006

For the possible application of pearl pigment, multi-layered $TiO_2/Al,\;Cr/TiO_2$ thin film were deposited on $SiO_2$ substrate by using sputtering method, $TiO_2$ and Al or Cr was selected as a possible high and low refraction material at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al,\;Cr/TiO_2$ layers shows a wavelength range of $430{\sim}760nm$, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well consistent with the experimental one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05b
• /
• pp.58-61
• /
• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.98-104
• /
• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.3
• /
• pp.146-151
• /
• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.