• Title/Summary/Keyword: D.C

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Roles of Transcription Factor Binding Sites in the D-raf Promoter Region

  • Kwon, Eun-Jeong;Kim, Hyeong-In;Kim, In-Ju
    • Animal cells and systems
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    • v.2 no.1
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    • pp.117-122
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    • 1998
  • D-raf, a Drosophila homolog of the human c-raf-1, is known as a signal transducer in cell proliferation and differentiation. A previous study found that the D-raf gene expression is regulated by the DNA replication-related element (DRE)/DRE-binding factor (DREF) system. In this study, we found the sequences homologous to transcription factor C/EBP, MyoD, STAT and Myc recognition sites in the D-raf promoter. We have generated various base substitutional mutations in these recognition sites and subsequently examined their effects on D-raf promoter activity through transient CAT assays in Kc cells with reporter plasmids p5'-878DrafCAT carrying the mutations in these binding sites. Through gel mobility shift assay using nuclear extracts of Kc cells, we detected factors binding to these recognition sites. Our results show that transcription factor C/EBP, STAT and Myc binding sites in D-raf promoter region play a positive role in transcriptional regulation of the D-raf gene and the Myo D binding site plays a negative role.

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The Characteristics of c-BN Thin Films on High Speed Steel by Electron Assisted Hot Filament C.V.D Systems (EACVD법에 의한 고속도강에의 c-BN박막형성 및 특성에 관하여)

  • Lee, Gun-Young;Choe, Jean-Il
    • Journal of the Korean institute of surface engineering
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    • v.39 no.3
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    • pp.87-92
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    • 2006
  • The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

ON SOME PROPERTIES OF BOUNDED HOMOMORPHISMS AND DERIVATIONS OF A C*-ALGEBRA

  • Nagisa, Masaru;Nam, Young-Man
    • East Asian mathematical journal
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    • v.4
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    • pp.1-13
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    • 1988
  • We consider some properties of the completely bounded representations of C*-algebras. We discuss the relation between the k-similarity and the property $D_k$ and get the result every k-similar C*-algebra has property $D_k$. Moreover we determine the similarity problem for the algebra C$\bigoplus$C precisely and constructively.

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raf Proto-oncogene is Involved in Ultraviolet Response in Drosophila

  • Ha, Hye-Yeong;Yu, Mi-Ae
    • Animal cells and systems
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    • v.1 no.4
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    • pp.637-640
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    • 1997
  • Raf-1, a cytoplasmic serine/threonine protein kinase, serves as a central intermediate in many signaling pathways in cell proliferation, differentiation, and development. In this study, we investigated that B-raf, Drosophila homolog of the human c-raf-1, is involved in ultraviolet (UV) responsive events by using hypomorphic mutant $D-raf^{c110}$ and Draf-lacZ transgenic fly. At first, effect of UV damage on the survival of wild-type and $D-raf^{C110}$ strains was examined. In terms of $1/LD_{50}$ value, the relative ratio of UV sensitivities of wild-type versus $D-raf^{C110}$ strain was 1 : 2.2. By using quantitative $\beta$-galactosidase activity analysis, transcriptional activity of the D-raf gene promoter was also examined in UV-irradiated Draf-lacZ transgenic larvae. UV irradiation increased the expression of lacZ reporter gene in Draf-lacZ transgenic fly. However, in $D-raf^{C110}$ strain the transcriptional activity of D-raf gene promoter by UV irradiation was extensively reduced. Results obtained in this study suggest that D-raf plays a role in UV response, leading to better survival of Drosophila to UV damage.

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The Whole Effluent Toxicity Tests of Wastewater Discharged from Various Wastewater Treatment Plants and Their Impact Analyses on Biological Component (폐수처리장의 전 방류수 독성 평가 및 방류수 배출하천의 생지표도 영향분석)

  • Ra, Jin-Sung;Kim, Sang-Don;An, Kwang-Guk;Chang, Nam-Ik
    • Journal of Korean Society of Environmental Engineers
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    • v.27 no.4
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    • pp.353-361
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    • 2005
  • In this study, we performed whole effluent toxicity(WET) test and compared the biological component analyses tests for some streams into which wastewater treatment plant effluents are discharged. The test procedures for the WET test and the biological component analysis were conducted according to U.S. EPA guidelines and the Ohio EPA wading method. The WET tests based on the test species of D. manga and S. capricornutum All treatment plants showed a S. capricornutum toxicity, and at 7 sites, except A and J, we could observe a D. magna toxicity. The highest toxicity was observed at site D and this were followed by E and F. The biological component analyses applied to the effluent discharged stream. We found that total species were low at sites C1, D1 and J1 and the low number of total individuals were observed at sites A1, C1, E1, H1, and J1 compared to the controls and other sites. The species richness was low at sites A1, B1, C1, D1, and J1. The species change was evident at site D(D1) and the tolerant species was predominant. The biological analyses and WET tests suggested that the effluents resulted in massive ecosystem impact.

Design and Fabrication of C-Band GaN Based on Solid State High Power Amplifier Unit for a Radar System (레이다용 C-대역 GaN 기반 고출력전력증폭장치 설계 및 제작)

  • Jung, Hyoung Jin;Park, Ji Woong;Jin, Hyoung Seok;Lim, Jae Hwan;Park, Se Jun;Kang, Min Woo;Kang, Hyun Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.9
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    • pp.685-697
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    • 2017
  • In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).

MARTENS' DIMENSION THEOREM FOR CURVES OF EVEN GONALITY

  • Kato, Takao
    • Journal of the Korean Mathematical Society
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    • v.39 no.5
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    • pp.665-680
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    • 2002
  • For a smooth projective irreducible algebraic curve C of odd gonality, the maximal possible dimension of the variety of special linear systems ${W^r}_d$(C) is d-3r by a result of M. Coppens et at. [4]. This bound also holds if C does not admit an involution. Furthermore it is known that if dim ${W^r}_d(C)qeq$ d-3r-1 for a curve C of odd gonality, then C is of very special type of curves by a recent progress made by G. Martens [11] and Kato-Keem [9]. The purpose of this paper is to pursue similar results for curves of even gonality which does not admit an involution.

The Characteristics of Conduction rind Switching Voltage for As-Ge-Te Memory Switching Device (As-Ge-Te 메모리 스위칭 소자의 전도 및 스위칭 전압 특성)

  • 이병석;이현용;이영종;정흥배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.67-70
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    • 1995
  • Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

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Structural Study on New Tannin, Polygagallin, from Acerginnala Max. (Acerginnala Max.에서 분리한 신 Tannin Polygagallin의 화학구조)

  • 한구동
    • YAKHAK HOEJI
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    • v.6 no.1
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    • pp.1-4
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    • 1962
  • A new tannin, polygagallin, related to acertannin, is isolated from air-dried leaves of Acer ginnala Max. as prismatic crystals with 1/2 H$_{2}$O per mole, m.p.154-155.deg. and [.alpha.]$_{D}$$^{29}$ +43.79.deg. C. Polygagllin gives hexaacetate, m.p.164.5.deg. C, [.alpha.]$_{D}$$^{28}$ +42.deg. C, on treating with anhydroacetic acid and on treating with diazomethane, gives trimethyl ether, m.p.176.deg. C, [.alpha.]$_{D}$$^{22}$ +53.43, which yields triacetate, m.p.160.5.deg. C, [.alpha.]$_{D}$$^{22}$ + 132.5.deg. C, on acetylation and is not attacked by periodate. On hydrolysis, trimethoxypolygagallin yields one mole of polygalitol and that of trimethoxygallic acid. By the above results polygalallin has been established as 3-galloylpolygalito.ygalito.galallin has been established as 3-galloylpolygalito.

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Thermal Rearrangement of 1,1-Disubstituted 2-Vinylcyclopropanes to 4,4-Disubstituted Cyclopentenes (두 치환체를 가진 비닐시클로프로판의 시클로펜텐으로의 열적자리 옮김반응)

  • Iwhan Cho;Kwang-Duk Ahn
    • Journal of the Korean Chemical Society
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    • v.22 no.3
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    • pp.158-163
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    • 1978
  • The four 1,1-disubstituted 2-vinylcyclopropanes, 1,1-diphenyl-2-vinylcyclopropane (1a), 1,1-dicyano-2-vinylcyclopropane(1b), ethyl 1-cyano-2-vinylcyclopropanecarboxylate(1c), and diethyl 2-vinylcyclopropane-1,1-dicarboxylate(1d) rearranged below $300{\circ}C$ to the corresponding 4,4-disubstituted cyclopentenes, 4,4-diphenylcyclopentene(2a), 3-cyclopentene-1,1-dicarboxylate(2d). Diphenpyl derivative 1a rearranged almost quantitatively to 4,4-diphenylcyclopentene(2a) at the temperature of $250{\circ}C$. Although dicyano derivative 1b in solution underwent the thermal rearrangement at rather low temperature of $170{\circ}C$, the other vinylcyclopropanes, 1c and 1d, in solution rearranged thermally above $220{\circ}C$. In the thermal reaction of 1b, 1c, and 1d considerable amounts of polymers 3 were also produced. Also detected product was the ring-opened diene, ethyl 2-cyano-2,4-hexadienoate(4), in case of the pyrolysis of 1c. The observed facile rearrangement of disubstituted vinylcyclopropanes was explained by the radical stabilization effect of substituents on the diradical intermediates 5.

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