• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.118-123
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• 1995

We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$\mu$m-long and 140$\mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.

• Laser Solutions
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• v.8 no.3
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• pp.5-10
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• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.637-640
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• 1998

A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4$\times$0.8 $\textrm{mm}^2$

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.92-97
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• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.

• Journal of IKEEE
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• v.23 no.1
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.22 no.53
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• pp.37-44
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• 1999

The problem to be studied here is the minimization of the total travel distance and the number of vehicles used for delivering goods to customers. Vehicle routes must also satisfy a variety of constraints such as fixed vehicle capacity, allowed operating time. Genetic algorithm to solve the VRPTW with heterogeneous fleet is presented. The chromosome of the proposed GA in this study has the 3-dimension. We propose GA that has the cubic-chromosome for VRPTW with heterogeneous fleet. The newly suggested ‘Cubic-GA (or 3-D GA)’ in this paper means the 2-D GA with GLS(Genetic Local Search) algorithms and is quite flexible. To evaluate the performance of the algorithm, we apply it to the Solomon's VRPTW instances. It produces a set of good routes and the reasonable number of vehicles.

• The Korea Journal of Herbology
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• v.28 no.2
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• pp.17-23
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• 2013

Objectives : To investigate the hepatoprotective effect of Gardeniae Fructus (Ga) and Glycine semen preparatum (Gl) aqueous extract against D-galactosamine (D-GalN, 300mg/kg body weight) was administered to the male Sprague Dawley (SD) rats. Materials and Methods : The study was carried out on male SD rats (age matched, weight $250{\pm}10$ g). Experimental groups (Exp) divided four : Normal group (Nor) was administered saline, Control (Con) group was only received D-GalN (300 mg/kg) intraperitoneally. Exp was orally administered Ga (200 mg/kg; Ga group), Gl (700 mg/kg; Gl group), and Chizadochi-Tang (200 mg/kg+700 mg/kg, GG group) after D-GalN treatment during 14 days (n=6). Results : D-GalN administration induced hepatotoxicity in rats which was manifested by increased levels of aspartate aminotransferase (AST), alanine aminotransferase (ALT), alkaline phosphatase (ALP) and lactate dehydrogenase (LDH) but decreased total cholesterol (HDL C) and triglyceride (TG). The serum TG concentrations were significantly increased ($^{\sharp}p$ <0.05) in the Ga group compared with Con. AST and ALP activities were significantly decreased ($^{\sharp}p$ <0.05) in the all experimental groups compared with Con. ALT activities were significantly decreased ($^{\sharp}p$ <0.05) in the Ga group compared with Con. LDH activities were significantly decreased ($^{\sharp}p$ <0.05) in the GG group compared with Con. On the light microscopic study, a number of vacuole were observed in the Con, but decreased in experimental groups. Conclusion : Ga aqueous extract and Chizadochi-Tang extract possesses hepatoprotective potential, thus validating its use in alleviating toxic effects of D-GalN.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.5
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• pp.1-8
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• 1976

Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.5
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• pp.621-627
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• 2011

In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.