Browse > Article
http://dx.doi.org/10.13067/JKIECS.2011.6.5.621

Analysis of Optimum Impedance for X-Band GaN HEMT using Load-Pull  

Kim, Min-Soo (경남대학교 정보통신공학과)
Rhee, Young-Chul (경남대학교 정보통신공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.6, no.5, 2011 , pp. 621-627 More about this Journal
Abstract
In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.
Keywords
X-band; Load-Pull; GaN HEMT; optimum impedance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 I. Boshnakov, "Practical Design Comparison Betw een High-Power GaAs MESFET and GaN HEMT", High Frequency Electronics, pp. 18-28, Oct., 2007.
2 J. Trew, G.L. Bilbro, W. Kuang, Y. Liu, H. Yin, "Microwave AlGaN/GaN HFETs", IEEE Micro wave Magazine, Vol. 6, No. 1, pp. 56-66, Mar., 2005.   DOI
3 S.G. Qadir, J.K. Kayani, S. Malik, "Digital Imple mentation of Pulse Compression Technique for X-band Radar", International Bhurban Conf. Appli ed Sciences & Tech., pp. 35-39, Jan., 2007.
4 Li. Zhu, X. Hu, Y. Lin, "Pulse Compression for Ra dar pulse signal in matched Fourier Transform Domain", International Conf. Radar CIE'06, pp. 1- 4, Oct., 2006.
5 E. Alekseev, D. Pavlidis, C. Tsironis, "W-band On-Wafer Load-Pull Measurement System and Its Application to HEMT Characterization", IEEE MTT -S Digest, Vol. 3, pp. 1479-1482, 1998.
6 D.W. Baker, R.S. Robertson, R.T. Kihm, M. Mat loubian, M. Yu, R. Bowen, "On-Wafer Load-Pull Characterization of W-band InP HEMT Unit Cells for CPW MMIC Medium Power Amplifier" IEEE MTT-S Digest, Vol. 4, pp. 1743-1746, Jun., 1999.
7 C. Schuberth, H. Arthaber, M.L. Mayer, G. Magerl, R. Quay, F. van Raay, "Load-Pull Characterization of GaN/AlGaN HEMTs", International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, pp. 180-182, Jan., 2006.
8 D.M. Fitzpatrick, T. Williams, J. Lees, J. Benedikt, S.C. Cripps, P,J, Tasker, "Exploitation of Active Load-Pull and DLUT Models in MMIC design", RFIC 2010 IEEE, pp. 487-490, May., 2010.
9 V.Teppati, A.Ferrero, U. Pisani, P.Colantonio, F. Giannini, E.Liniti, "Load-Pull Techniques", Encyc lopedia of RF and Microwave Engineering, New York, Wiley-Interscience, 2005.
10 T. Reveyrand, T. Gasseling, D. Bararaud, S. Mons, J.-M. Nebus, "A Smart Load-Pull Method to Safely Reach Optimal Matching Impedances of Power Transistors", IEEE MTT-S International, pp. 1489-1492, Jun., 2007.