• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Journal of Korean Association for Spatial Structures
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• v.8 no.3
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• pp.75-82
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• 2008

In this study, the modified genetic algorithm, D-GA, is proposed. D-GA is a hybrid genetic algorithm combined a simple genetic algorithm and the local search algorithm using direction vectors. Also, two types of direction vectors, learning direction vector and random direction vector, are defined without the sensitivity analysis. The accuracy of D-GA is compared with that of simple genetic algorithm. It is demonstrated that the proposed approach can be an effective optimization technique through a minimum weight structural optimization of ten bar truss.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.361-361
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• 2011

Cu(InGa)(SeS2) (CIGS) thin film solar cells have recently reached an efficiency of 20%. Recent studies suggest a double graded band gap structure of the CIGS absorber layer to be a key issue in the production of high efficiency thin film solar cell using by sputtering process method. In this study, Cu(InGa)(SeS2) absorbers were manufactured by selenization and surfulization, we have deposited CIG precusor by sputtering and Se layer by evaporation before selenization. The objective of this study is to find out surfulization effects to improve Voc and to compare with non-surfulization Cu(InGa)Se2 absorbers. Even if we didn't analysis Ga depth profile of Cu(InGa)(SeS2) absorbers, we confirmed increasing of Eg and Voc through surlization process. In non-surfulization Cu(InGa)Se2 absorbers, Eg and Voc are 0.96eV and 0.48V. Whereas Eg and Voc of Cu(InGa)(SeS2) absorbers are 1.16eV and 0.57V. And the efficiency of 9.58% was achieved on 0.57cm2 sized SLG substrate. In this study, we will be discussed to improve Eg and Voc through surfulization and the other method without H2S. gas.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.35 no.2
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• pp.165-170
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• 1990

In order to determine the relationship between dwarf gene and GA$_3$ response, three dwarf cultivars, Fukei 71, Seolak, and Tanginbozu, which were known to have d 50, d 47 and d 35 gene, respectively, were used as parents in this study. Three parents and their F$_1$ and F$_2$ generations were grown. Tillers of each plant were devided into two parts at 15 days after transplanting and was transplanted. One part of them was sprayed with GA$_3$ 50 ppm at booting stage. The internode length were measured at ripening stage in terms of GA$_3$ response. The internode was significantly elongated in Seolak and Tanginbozu, but not in Fukei 71. All F$_1$ plants of the crosses were tall, and their internode and culm were significantly elongated with the spraying of GA$_3$. Dwarf plants which are not responded to GA$_3$ were selected in the F$_2$'s of Seolak/Fukei 71 and Fukei 71/Tanginbozu crosses, and backcrossed to Fukei 71. All of these BC$_1$F$_1$ plants were uniform in the culm length and not responded to GA$_3$ treatment. The dwarf gene, d 50 of Fukei 71 seems to be closely associated with the facter of non-response to GA$_3$.

• Journal of Plant Biology
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• v.17 no.4
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• pp.163-170
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• 1974

Leaf tissue of Glycine max Merr. was fixed in para-formaldehyde-glutarldehyde and postfixed in osmium tetroxide or postassium permanganate for electron microscopy. The origin of cytolysome-like organelles of mesophyll cell was studied and changes of fine structure of the organelles according to treating solutions such as gibberellin (GA), kinethin (KI), 2,4-dichlorophenoxy acetic acid(2, 4-D) or 2, 4-D＋GA(1mg/l, respectively) were observed. The cylolysome-like organelles differentiate in endoplasmic reticulum and plasmalemma, and they drop into vacuoles being isolated from the formers. They seem to change into myelin-like structure and to be degenerated by autodigestion. Cytolysome-like organelles involved in cell walls and vacuoles showed activity of acid phosphatase. In the group of GA and KI treatment, cytolysome-like organelles were similar to that of the control group. But in the treatmental groups of 2,4-D and 2,4-D＋GA, myelin-like structures increased in size and autodigestion of this organelles were similar to that of the control group. But in the treatmental groups of 2,4-D and 2,4-D＋GA, myelin-like structures increased in size and autodigestion of this organelle seemed to be accelerated. In the treatmental group of 2,4-D＋GA, myelin-like structures shown high electron density were observed in cytoplasm and vacuoles together.

• Resources Recycling
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• v.24 no.5
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• pp.80-86
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• 2015

The separation of In from the synthesis solution with Ga, Fe, and Al has been studied by the solvent extraction using D2EHPA as an extractant. The effects as a function of the concentration of extractant and HCl on the extraction of In were investigated. The extraction of In and Ga increased with decreasing HCl concentration, but that of Fe and Al was independent. Separation factor between In and Ga of 115 was obtained at 1.0 M D2EHPA in the presence of 0.5 M HCl of feed solution. Consequently, this study shows that D2EHPA is suitable extractant for In extraction from the synthesis solution. Extraction efficiency and separation factor could be increased by controlling HCl and extractant concentration.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.23-28
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• 2010

In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.

• Journal of Plant Biology
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• v.25 no.1
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• pp.3-8
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• 1982

As a part of the studies on the regulatory mechanism of gene expression by gibbrellic acid, the effects of $GA_3$ on the protein biosynthesis and phosphorylation in maize seedlings were investigated in the presence of actinomycin D. The activities of protein biosynthesis and phosphorylation in germinating seeds treated with $GA_3$ were greater than those of the control at the 3-day point after germination. It is assumed that the enhancement of protein biosynthesis by $GA_3$ in the presence of actinomycin D is due to the effects of $GA_3$ on the translational processes in which protein is produced from the mRNA synthesized previously.