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3D Simulation on Polarization Effect in AlGaN/GaN HEMT  

Jung, Kang-Min (School of Electrical Engineering, Korea University)
Kim, Jae-Moo (School of Electrical Engineering, Korea University)
Kim, Hee-Dong (School of Electrical Engineering, Korea University)
Kim, Dong-Ho (School of Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.10, 2010 , pp. 23-28 More about this Journal
Abstract
In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.
Keywords
GaN; HEMT; Polarization;
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Times Cited By KSCI : 2  (Citation Analysis)
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1 M.A. Mastroa, J.R. LaRocheb, N.D. Bassima and C.R. Eddy, Jr. "Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT", Microelectronics Journal. 36, pp. 705-711, August 2005.   DOI   ScienceOn
2 S.K. Davidsson, M. Gurusinghe, T.G. Andersson and H. Zirath, "The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructure", Journal of Electronic Materials. 33, pp. 440-444, 2004.   DOI   ScienceOn
3 A. F. M. Answer and Elias W. Faraclas, "AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics", Solid-State Electronics. 50, pp. 1051-1056, June 2006.   DOI   ScienceOn
4 P.M. Asbeck, E.T. Yu, S.S. Lau, G.J. Sullivan. Van Hove and J. Redwing, "Piezoelectric charge densities in AlGaN/GaN HFETs", Electron. Lett. 3, pp. 1230-1231, June 1997.
5 Device simulation software Atlas, Atlas User's Manual, Silcvaco international, 2007.
6 F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides", Phys. Rev. B. 56, R10024, May 1997.   DOI
7 K. Tsubouchi, K. Sugai, and N. Mikoshiba, IEEE Ultrason. Symp. 1, 375 (1981)
8 Q. Z. Liu, L. S. Yu, F. Deng, and S. S. Lau, Q. Chen, J. W. Yang, and M. A. Khan, "Study of contact formation in AlGaN/GaN heterostructures", Appl. Phys. Lett. 71, pp. 1658-1660, September 1997.   DOI   ScienceOn
9 O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures", J. Appl. Phys. 87, 334 January 2000.   DOI   ScienceOn
10 O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures", J. Appl. Phys. 85, 3222-3223, March 1999.   DOI   ScienceOn
11 김재무, 김수진, 김동호, 정강민, 최홍구, 한철구, 김태근, "사다리꼴 게이트 구조를 갖는 고내압 AlGaN/GaN HEMT", 대한전자공학회논문지, 제46권 SD편, 제4호, 10쪽-14쪽, 2009년 4월   과학기술학회마을
12 오영해, 지순구, 서정하, "압전 및 자발 분극을 고려한 단채널 AlGaN/GaN HEMT의 전류-전압 특성에 관한 해석적 모델", 대한전자공학회논문지, 제42권 SD편, 제12호, 103쪽-112쪽, 2005년 12월   과학기술학회마을
13 Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh P, "30-W/mm GaN HEMTs by field plate optimization", IEEE Electron Device Lett. 25, pp. 117-119, March 2004.   DOI   ScienceOn
14 Zhang N Q, Keller S, Parish G, Heikman S, Denbaars S P and Mishra U K, "High breakdown GaN HEMT with overlapping gate structure", IEEE Electron Device Lett. 21, pp. 373-375, September 2000.   DOI   ScienceOn