• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.64-68
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• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.5
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• pp.621-627
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• 2011

In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

• Journal of electromagnetic engineering and science
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• v.10 no.4
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• pp.309-315
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• 2010

A dual-band dual-polarized microstrip antenna array for an advanced multi-function radio function concept (AMRFC) radar application operating at S and X-bands is proposed. Two stacked planar arrays with three different thin substrates (RT/Duroid 5880 substrates with $\varepsilon_r$=2.2 and three different thicknesses of 0.253 mm, 0.508 mm and 0.762 mm) are integrated to provide simultaneous operation at S band (3~3.3 GHz) and X band (9~11 GHz). To allow similar scan ranges for both bands, the S-band elements are selected as perforated patches to enable the placement of the X-band elements within them. Square patches are used as the radiating elements for the X-band. Good agreement exists between the simulated and the measured results. The measured impedance bandwidth (VSWR$\leq$2) of the prototype array reaches 9.5 % and 25 % for the S- and X-bands, respectively. The measured isolation between the two orthogonal polarizations for both bands is better than 15 dB. The measured cross-polarization level is ${\leq}-21$ dB for the S-band and ${\leq}-20$ dB for the X-band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.9
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• pp.60-65
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• 2009

In this paper, we present a compact Ultra-Wideband band-pass later with notched band at fireless-LAN band using a band-pass and band-notch filter. The structure of our proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) structure is used to get the low-pass filter characteristic, and an embedded open-stub structure is used to get the notched filter. Our proposed band-pass filter can be much smaller than a cascaded filter. As a result of measurement, the insertion loss is less than 0.7dB throughout the pass-band of $2.21GHz{\sim}10.92GHz$, the return loss is more than 17dB and the group delay maximum variation is 0.24ns and a notched band is at $5.3GHz{\sim}5.7GHz$.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2007.04a
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• pp.440-443
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• 2007

In this paper, microstrip antenna is designed for industrial-scientific-medical(ISM)band of S-Band. We proposed that radiation element of antenna, which is rectangle patch shape. The feeding structure used L-shaped structure. Center frequency and -l0dB bandwidth are investigated by change of length and width in patch plane. And maximum gain, front to back ratio and 3dB beam width is presented by simulation radiation pattern of antenna in frequency ISM Band. The center frequency is 2.45GHz, band width is $2.314{\sim}2.577GHz$ with 263MHz(11%). And the antenna maximum gain is 9.3dBi, 3dB beam width E-plane is $52.5^{\circ}$, H-plane is $64.7^{\circ}$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.4
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• pp.31-37
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• 2010

In this paper, highly efficient dual-band class-F power amplifiers(PAs) for cellular and WLAN bands are suggested and implemented. For the first step, single-band class-F amplifiers at 840MHz, 2.4GHz are designed using commercial E-pHEMT FETs. The performance of two single band PAs are as much as 81.2% of efficiency with the output power of 24.4dBm with 840MHz PA and 93.5% of efficiency with 22.4dBm from the 2.4GHz. For the dual-band class-F PA, the harmonic controlling circuit with ideal SPDT switch was suggested. The length of transmission line is variable by a SPDT switch. As a results, the operation in 840MHz showed the peak efficiency of 60.5% with 23.5dBm, while in 2.4GHz mode the efficiency was 50.9% with the output power of 19.62dBm. Besides, it is shown that the harmonic controller of class-F above 2Ghz could be implemented on the low cost FR-4 substrate.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.12
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• pp.1423-1431
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• 2010

In this paper, the dual-band compact broad bandpass filter using parallel coupled line is proposed. The proposed filter has reduced size and can be controlled bandwidth. And it is also possible to operate in the dual-band purpose. Futhermore, the inserted bandstop fiilter with T-type configuration is also possible to operate in the same purpose. The dual-band bandpass filter has the first operating frequencies and its bandwidth which are 5.8 GHz and 60 % respectively and the second operating frequency and the bandwidth are 16.2 GHz and 60 % respectively. The insertion loss and the return loss of the first frequency has 0.4 dB and 17.4 dB and the insertion loss and the return loss of the second frequency has 0.62 dB and 19.8 dB, respectively.

• Journal of IKEEE
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• v.21 no.3
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• pp.219-226
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• 2017

This paper was studied the double-band monopole antenna design with Mu-negative metamaterial unit cell, which operates at 700MHz and 2.45GHz band. Mu-negative unit cell made of the interdigital capacitor structure to operate a double-band antenna by inserting it into an antenna radiator unit. In addition, the parasitic conductor is implemented on the back side of the antenna radiation part, so that the resonance point of the antenna can be controlled and the bandwidth is improved. Finally, we implemented an antenna operating in the 750MHz UHD band and the 2.45GHz WiFi band. The designed antenna has a size of $200{\times}100mm^2$. Experimental results show that the 8dB bandwidth and gain characteristics at 750MHz band are 320MHz(42.7%), 5.28dB, 6dB bandwidth and gain at 2.45GH are 540MHz (21.6%), -0.46dB. From the experimental results, we confirmed that the resonance point with theoretical value is in agreement with experimental value, and the radiation patterns are have the omnidirectional characteristic in both bands.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.2
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• pp.27-32
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• 2018

In this paper, W-band transceiver module for compact radar has been designed and fabricated. Utilizing proposed microstrip-to-waveguide transition, the error between design and implementation is reduced. The proposed transition provides less than 1 dB insertion loss per transition and reliability for fabrication. In order to apply compact radar with dual-polarized monopulse directly, W-band transmitter with 28 dBm output power is designed and developed. Also, 6 channels of receiver module with low noise figure 13.5 dB and maximum 17 dBm input P1dB is developed. Proposed W-band transceiver module is expected compact radar application for dual-polarized monopulse signal processing system.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.