• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.8 s.111
• /
• pp.767-772
• /
• 2006

The receiver of this paper is Dual-band monopulse type for prototype of tracking radar. Localization of radar technology is an issue of SamsungThales and go into development. Dual-band radar in comparison with Single-band radar requires higher cost and power consumption but there are many advantages of dealing with jamming, detection range, image signal rejection, cloud-rain influence, clutter, resolution. The receiver is comprised of X-band RF head module, Ka-band RF head module and common IF module. Each signal of X-band and Ka-band is selected by the switch in If module. Phase shifter in IF module of local stage controls the phase of sum, azimuth, elevation channel. In the test result, gain is $40{\pm}3 dB$, isolation of transmitter/receiver is 39 dBc, dynamic range is 110 dB and noise figure of each channel is 4.5dB and 6.9dB.

• Journal of Powder Materials
• /
• v.28 no.3
• /
• pp.208-215
• /
• 2021

Metal three-dimensional (3D) printing is an important emerging processing method in powder metallurgy. There are many successful applications of additive manufacturing. However, processing parameters such as laser power and scan speed must be manually optimized despite the development of artificial intelligence. Automatic calibration using information in an additive manufacturing database is desirable. In this study, 15 commercial pure titanium samples are processed under different conditions, and the 3D pore structures are characterized by X-ray tomography. These samples are easily classified into three categories, unmelted, well melted, or overmelted, depending on the laser energy density. Using more than 10,000 projected images for each category, convolutional neural networks are applied, and almost perfect classification of these samples is obtained. This result demonstrates that machine learning methods based on X-ray tomography can be helpful to automatically identify more suitable processing parameters.

• Bulletin of the Korean Mathematical Society
• /
• v.42 no.4
• /
• pp.679-690
• /
• 2005

Let K be a commutative ring with unity, R a prime K-algebra of characteristic different from 2, d a non-zero derivation of R, I a non-zero right ideal of R, f($x_1,{\cdots},\;x_n$) a multilinear polynomial in n non-commuting variables over K, a $\in$ R. Supppose that, for any $x_1,{\cdots},\;x_n\;\in\;I,\;a[d(f(x_1,{\cdots},\;x_n)),\;f(x_1,{\cdots},\;x_n)]$ = 0. If $[f(x_1,{\cdots},\;x_n),\;x_{n+1}]x_{n+2}$ is not an identity for I and $$S_4(I,\;I,\;I,\;I)\;I\;\neq\;0$$, then aI = ad(I) = 0.

• Journal of the Mineralogical Society of Korea
• /
• v.16 no.1
• /
• pp.65-73
• /
• 2003

In this study we have derived the two correction methods of hydrogen bonding distance. In case of the intermediate or long hydrogen bond(＞2.5 $\AA$), hydrogen bonding distances can be corrected by using the function d(O-H)=exp((2.173-d(O…O))/0.138)+0.958 obtained by least- squares fit to the data from the neutron diffraction at low temperatures. The valence-least-squares method is effective for the distance correction of very short hydrogen bond(<2.5 $\AA$). The distance correction is necessary for the long intermolecular hydrogen bond obtained from X-ray diffraction analysis.

• Journal of Magnetics
• /
• v.20 no.4
• /
• pp.331-335
• /
• 2015

The ferromagnetic and electronic structure for the $Al_xGa_{1-x}P$ and Mn-doped $AlGaP_2$ was studied by using the self-consistent full-potential linear muffin-tin orbital method. The lattice parameters of un-doped $Al_xGa_{1-x}P$ (x = 0.25, 0.5, and 0.75) were optimized. The band-structure and the density of states of Mn-doped $AlGaP_2$ with or without the vacancy were investigated in detail. The P-3p states at the Fermi level dominate rather than the other states. Thus a strong interaction between the Mn-3d and P-3p states is formed. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the (Mn-3d)-(P-3p)-(Mn-3d) hybridization, which is attributed by the partially filled P-3p bands. The holes are mediated with keeping their 3d-characters, therefore the ferromagnetic state is stabilized by this double-exchange mechanism.

• Journal of the Korean Mathematical Society
• /
• v.52 no.5
• /
• pp.991-1001
• /
• 2015

In this work we obtain conditions for nonspecial line bundles on general ${\kappa}$-gonal curves failing to be normally generated. Let L be a nonspecial very ample line bundle on a general ${\kappa}$-gonal curve X with ${\kappa}{\geq}4$ and $deg\mathcal{L}{\geq}{\frac{3}{2}}g+{\frac{g-2}{{\kappa}}}+1$. If L fails to be normally generated, then L is isomorphic to $\mathcal{K}_X-(ng^1_{\kappa}+B)+R$ for some $n{\geq}1$, B and R satisfying (1) $h^0(R)=h^0(B)=1$, (2) $n+3{\leq}degR{\leq}2n+2$, (3) $deg(R{\cap}F){\leq}1$ for any $F{\in}g^1_k $. Its converse also holds under some additional restrictions. As a corollary, a very ample line bundle $\mathcal{L}{\simeq}\mathcal{K}_X-g^0_d+{\xi}^0_e$ is normally generated if $g^0_d{\in}X^{(d)}$ and ${\xi}^0_e{\in}X^{(e)}$ satisfy $d{\leq}{\frac{g}{2}}-{\frac{g-2}{\kappa}}-3$, supp$(g^0_d{\cap}{\xi}^0_e)={\phi}$ and deg$(g^0_d{\cap}F){\leq}{\kappa}-2$ for any $F{\in}g^1_k$.

• Current Photovoltaic Research
• /
• v.11 no.2
• /
• pp.39-43
• /
• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• Journal of applied mathematics & informatics
• /
• v.31 no.1_2
• /
• pp.179-188
• /
• 2013

In this paper, we study the number of solutions to the equation $(x+1)^d=x^d+1$. This equation gives the value of the third power sum equation in case of Niho type exponents and is helpful in finding the distribution of the values $C_d({\tau})$. We provide the number of the solutions using the new method.

• Bulletin of the Korean Mathematical Society
• /
• v.29 no.1
• /
• pp.137-143
• /
• 1992

The purpose of this paper is to provide the affirmative solution of the following conjecture due to Davis and Geramita. Conjecture; Let A=R[T] be a polynomial ring in one variable, where R is a regular local ring of dimension d. Then maximal ideals in A are complete intersection. Geramita has proved that the conjecture is true when R is a regular local ring of dimension 2. Whatwadekar has rpoved that conjecture is true when R is a formal power series ring over a field and also when R is a localization of an affine algebra over an infinite perfect field. Nashier also proved that conjecture is true when R is a local ring of D[ $X_{1}$,.., $X_{d-1}$] at the maximal ideal (.pi., $X_{1}$,.., $X_{d-1}$) where (D,(.pi.)) is a discrete valuation ring with infinite residue field. The methods to establish our results are following from Nashier's method. We divide this paper into three sections. In section 1 we state Theorems without proofs which are used in section 2 and 3. In section 2 we prove some lemmas and propositions which are used in proving our results. In section 3 we prove our main theorem.eorem.rem.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.5
• /
• pp.7-13
• /
• 1997

A X-band 3-stage monolithic LNA (low noise amplifier) with series feedback has been successfully desined and demonstrated by suign 0.5-$\mu\textrm{m}$ GaAs MESFET. In the design of the 3-stage LNA, the effects of series feedback to the noise figure, the gain, and the stability have been investigated ot find the optimal short stub length. As a result, the inductive series feedback topology which has 10degree short stub in the GaAs MESFET source lead, has been employed in the 1-st stage. The fabricated MMIC LNA's chip size is only 1mm$^{2}$/stage, which is smaller than the previously reported X-band MMIC input/output return losses are less than -10dB and -15dB, respectively. The noise figure (NF) is less than 2.6dB. The measured data show good agreement with the simulated values.